公开(公告)号：KR1020000025932A

公开(公告)日：2000-05-06

申请号：KR1019980043235

申请日：1998-10-15

Applicant: 삼성전자주식회사

Inventor： 구경모 ,  하인수

IPC: H01L21/20

Abstract: PURPOSE: A deposition device having a thickness monitoring function directly monitors a film thickness, regulates a deposition condition according to the result, obtains a film of a desired thickness, and reduces a working loss. CONSTITUTION: A deposition device having a thickness monitoring function deposits a film on a wafer(24). A part(20) deposits a film on the wafer(24), and measures a thickness of a deposited film. A film deposition controller(30) receives a film thickness data measured by the measuring part(20), maintains a deposition condition of the measuring part(20), or varies the deposition condition. The wafer(24) has a site(25) for measuring a film thickness. Thereby, the deposition device directly monitors a film thickness, regulates a deposition condition according to the result, obtains a film of a desired thickness, and reduces a working loss.

Abstract translation: 目的：具有厚度监测功能的沉积装置直接监测膜厚度，根据结果调节沉积条件，获得所需厚度的膜，并减少工作损失。 构成：具有厚度监测功能的沉积装置将薄膜沉积在晶片（24）上。 一部分（20）在薄片（24）上沉积薄膜，并测量沉积薄膜的厚度。 薄膜沉积控制器（30）接收由测量部件（20）测量的薄膜厚度数据，维持测量部件（20）的沉积条件，或改变沉积条件。 晶片（24）具有用于测量膜厚度的部位（25）。 因此，沉积装置直接监控膜厚度，根据结果调节沉积条件，获得所需厚度的膜，并减少工作损失。

公开(公告)号：KR3007290750000S

公开(公告)日：2014-02-13

申请号：KR3020130064789

申请日：2013-12-23

Applicant: 삼성전자주식회사

Designer： 윤민경 ,  김득헌 ,  구경모 ,  노필철 ,  권용환 ,  황우석

公开(公告)号：KR3007290740000S

公开(公告)日：2014-02-13

申请号：KR3020130064788

申请日：2013-12-23

Applicant: 삼성전자주식회사

Designer： 윤민경 ,  김수지 ,  최숙경 ,  구경모 ,  권용환 ,  황우석

公开(公告)号：KR1020050024682A

公开(公告)日：2005-03-11

申请号：KR1020030060764

申请日：2003-09-01

Applicant: 삼성전자주식회사

Inventor： 구경모 ,  엄현일 ,  정선혁 ,  이효범

IPC: H01L21/02

Abstract: PURPOSE: A process chamber for fabricating a semiconductor for sensing easily an internal temperature thereof is provided to detect accurately a temperature of a semiconductor wafer and display the sensed temperature by installing a temperature sensor in the inside of the process chamber. CONSTITUTION: A process chamber is used for processing a semiconductor wafer loaded in a limited reaction space. The process chamber includes a plurality of temperature sensors(210,220) which are installed in the limited reaction space to sense a temperature within the limited reaction space. A display device is used for displaying the temperature detected by the temperature sensors. The temperature sensors are formed with infrared cameras.

Abstract translation: 目的：提供用于制造用于容易地感测其内部温度的半导体的处理室，以通过在处理室的内部安装温度传感器来精确地检测半导体晶片的温度并显示感测的温度。 构成：处理室用于处理装载在有限反应空间中的半导体晶片。 处理室包括多个温度传感器（210,220），其安装在有限反应空间中以感测受限反应空间内的温度。 显示装置用于显示由温度传感器检测到的温度。 温度传感器由红外摄像机形成。

公开(公告)号：KR1020000060688A

公开(公告)日：2000-10-16

申请号：KR1019990009224

申请日：1999-03-18

Applicant: 삼성전자주식회사

Inventor： 구경모 ,  최승철 ,  서영채

IPC: H01L21/28

Abstract: PURPOSE: A method for manufacturing a silicide layer of a semiconductor device using a duplicate capping layer is provided to improve silicification in an edge portion in a region having a small silicide margin by using a duplicate capping layer of a titanium layer and a titanium nitride layer to substitute oxygen re-sputtered when a natural oxidation layer is etched by the titanium layer, and to make a uniform silicide layer by using the titanium nitride layer. CONSTITUTION: A method for manufacturing a cobalt silicide layer of a semiconductor device comprises the steps of: forming a cobalt layer(112) on a silicon semiconductor substrate(100); sequentially evaporating a titanium layer(114) and a titanium nitride layer on the cobalt layer; and forming a cobalt silicide layer on the exposed silicon semiconductor substrate.

Abstract translation: 目的：提供一种使用重复覆盖层制造半导体器件的硅化物层的方法，以通过使用钛层和氮化钛层的重复覆盖层来改善具有小硅化物边缘的区域中的边缘部分的硅化 代替当钛层蚀刻天然氧化层时再溅射的氧，并通过使用氮化钛层制成均匀的硅化物层。 构成：用于制造半导体器件的钴硅化物层的方法包括以下步骤：在硅半导体衬底（100）上形成钴层（112）; 在钴层上依次蒸发钛层（114）和氮化钛层; 以及在所述暴露的硅半导体衬底上形成钴硅化物层。