公开(公告)号：KR1020030097567A

公开(公告)日：2003-12-31

申请号：KR1020020036010

申请日：2002-06-26

Applicant: 삼성전자주식회사

Inventor： 구경모 ,  원제형 ,  박상욱 ,  엄현일 ,  정선혁

IPC: H01L21/20

CPC classification number: H01L21/76843 ,  H01L21/02046 ,  H01L21/28518 ,  H01L21/3003 ,  H01L21/76814 ,  H01L21/76856 ,  H01L21/76862 ,  Y10S438/906

Abstract: PURPOSE: A method for fabricating a barrier layer of a semiconductor device is provided to eliminate the impurities like fluorine or boron included in the surface portion of a substrate and to reduce contact resistance by performing the first hydrogen plasma treatment process in a chemical vapor deposition(CVD) chamber or a plasma-enhanced chemical vapor deposition(PECVD) chamber before a refractory metal layer used as a barrier layer is deposited. CONSTITUTION: Hydrogen plasma including at least one kind of inert gas is biased with radio frequency(RF) bias power to make the hydrogen plasma face a silicon wafer while the surface of the silicon wafer is processed by using the hydrogen plasma. The RF bias power is from 50 to 900 Watts.

Abstract translation: 目的：提供一种用于制造半导体器件的阻挡层的方法，以消除包含在衬底的表面部分中的诸如氟或硼的杂质，并且通过在化学气相沉积中进行第一氢等离子体处理工艺来降低接触电阻（ CVD）室或等离子体增强化学气相沉积（PECVD）室，在沉积用作阻挡层的难熔金属层之前。 构成：包括至少一种惰性气体的氢等离子体用射频（RF）偏置功率偏置，以使氢等离子体面向硅晶片，同时通过使用氢等离子体处理硅晶片的表面。 RF偏置功率为50至900瓦特。

公开(公告)号：KR100469127B1

公开(公告)日：2005-01-29

申请号：KR1020020036010

申请日：2002-06-26

Applicant: 삼성전자주식회사

Inventor： 구경모 ,  원제형 ,  박상욱 ,  엄현일 ,  정선혁

IPC: H01L21/20

CPC classification number: H01L21/76843 ,  H01L21/02046 ,  H01L21/28518 ,  H01L21/3003 ,  H01L21/76814 ,  H01L21/76856 ,  H01L21/76862 ,  Y10S438/906

Abstract: A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H 2 ) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H 2 ) plasma to clean the surface of the silicon wafer.

Abstract translation: 一种清洁硅晶片表面的方法包括使硅晶片的表面经受包含至少一种惰性气体的氢气（H 2 SUB）气体等离子体，同时用RF偏置功率偏置氢等离子体 以引导氢（H SUB 2 /）等离子体清洁硅晶片的表面。

公开(公告)号：KR1020050024682A

公开(公告)日：2005-03-11

申请号：KR1020030060764

申请日：2003-09-01

Applicant: 삼성전자주식회사

Inventor： 구경모 ,  엄현일 ,  정선혁 ,  이효범

IPC: H01L21/02

Abstract: PURPOSE: A process chamber for fabricating a semiconductor for sensing easily an internal temperature thereof is provided to detect accurately a temperature of a semiconductor wafer and display the sensed temperature by installing a temperature sensor in the inside of the process chamber. CONSTITUTION: A process chamber is used for processing a semiconductor wafer loaded in a limited reaction space. The process chamber includes a plurality of temperature sensors(210,220) which are installed in the limited reaction space to sense a temperature within the limited reaction space. A display device is used for displaying the temperature detected by the temperature sensors. The temperature sensors are formed with infrared cameras.

Abstract translation: 目的：提供用于制造用于容易地感测其内部温度的半导体的处理室，以通过在处理室的内部安装温度传感器来精确地检测半导体晶片的温度并显示感测的温度。 构成：处理室用于处理装载在有限反应空间中的半导体晶片。 处理室包括多个温度传感器（210,220），其安装在有限反应空间中以感测受限反应空间内的温度。 显示装置用于显示由温度传感器检测到的温度。 温度传感器由红外摄像机形成。