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公开(公告)号：KR101599724B1
公开(公告)日：2016-03-04
申请号：KR1020090012501
申请日：2009-02-16
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L27/108
CPC classification number: H01L28/60 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/3142 , H01L21/31604 , H01L21/31641 , H01L27/10852 , H01L28/40
Abstract: 반도체장치및 그제조방법이제공된다. 상기반도체장치는기판상에형성된하부전극, 하부전극상에형성되며, Hf, Al, Zr, La, Ba, Sr, Ti 및 Pb를포함하는그룹에서선택된금속의제1 산화물을포함하는제1 유전막, 제1 유전막상에형성되며, Hf, Al, Zr, La, Ba, Sr, Ti 및 Pb를포함하는그룹에서선택된금속의제2 산화물을포함하는제2 유전막으로서, 제2 산화물은제1 산화물과서로다른제2 유전막, 제2 유전막상에형성되며, 금속유기산질화막을포함하는제3 유전막및 제3 유전막상에형성된상부전극을포함한다.
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公开(公告)号：KR1020150104404A
公开(公告)日：2015-09-15
申请号：KR1020140026096
申请日：2014-03-05
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/4404 , C23C16/32 , C23C16/34 , G01B2210/56 , H01L21/67005
Abstract: 게이트 전극 물질로 사용되는 도전성 박막이 형성된 반응 챔버의 내측면에 파티클 방지막을 형성함으로써, 도전성 박막을 형성하는 동안 기판 상에 파티클이 떨어지는 것을 방지하여 생산 수율을 향상시킬 수 있는 반도체 제조 장비 운용 방법을 제공하는 것이다. 상기 반도체 제조 장비 운용 방법은 반응 챔버의 내측면과, 상기 반응 챔버 내의 기판 상에 제1 도전성 물질을 포함하는 도전성 박막을 형성하고, 상기 도전성 박막이 형성된 상기 반응 챔버의 내측면에 파티클 방지막을 형성하는 것을 포함한다.
Abstract translation: 本发明提供了一种操作半导体制造设备的方法，其能够通过在反应室的内部形成导电薄膜，从而提高生产成品率并防止颗粒在导电薄膜形成时在基板上滴落 用作栅电极材料。 操作半导体制造设备的方法包括在反应室中形成包括反应室内部的导电薄膜和在基板上的第一导电材料，并且在具有反应室的反应室内部形成防颗粒层 导电薄膜。
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公开(公告)号：KR1020140107931A
公开(公告)日：2014-09-05
申请号：KR1020130022159
申请日：2013-02-28
Applicant: 삼성전자주식회사
Abstract: A method for rotating an original image includes the steps of: performing self-learning using addresses related to at least one page miss; generating address generation regulations using the self-learning result; and pre-fetching the original image from a memory device according to the address generation regulations and generating an image which is rotated by using the pre-fetched image.
Abstract translation: 用于旋转原始图像的方法包括以下步骤：使用与至少一个页面遗漏相关的地址执行自学习; 使用自学习结果生成地址生成规则; 并根据地址生成规则从存储装置预取原始图像，并生成通过使用预取图像旋转的图像。
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公开(公告)号：KR1020140063125A
公开(公告)日：2014-05-27
申请号：KR1020120130118
申请日：2012-11-16
Applicant: 삼성전자주식회사
IPC: G06T5/00
CPC classification number: G06T5/20 , G06T5/00 , G06T2207/20012 , G06T2207/20104
Abstract: Disclosed are an image processing method for improving image quality by applying different coefficients according to an area and a device for the same. The image processing device of the present invention includes an area detector determining which area among areas (more than two) input image data is included by receiving the input image data and a calculation unit calculating the input image data by applying the coefficient corresponding to the determined area among the different coefficients which is predetermined by corresponding to the areas. Therefore, the present invention improves the image quality when two or more images are included in one screen.
Abstract translation: 公开了一种图像处理方法，用于通过根据区域和装置应用不同的系数来提高图像质量。 本发明的图像处理装置包括：区域检测器，其通过接收输入图像数据来确定包括输入图像数据的区域（多于两个）中的哪个区域;以及计算单元，通过应用与所确定的对应的系数相对应的系数来计算输入图像数据 通过对应于该区域而预先确定的不同系数之间的区域。 因此，当在一个屏幕中包括两个或多个图像时，本发明改善了图像质量。
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Patent Agency Ranking
公开(公告)号：KR1020120108136A
公开(公告)日：2012-10-05
申请号：KR1020110025712
申请日：2011-03-23
Applicant: 삼성전자주식회사
IPC: G06T3/00
CPC classification number: G09G5/373 , G09G5/026 , G09G2340/0407
Abstract: PURPOSE: An image processing method and device thereof are provided to make an image better using a plurality of filters. CONSTITUTION: N filters(30-1~30-n) receive input pixel data respectively. The input pixel data are scaled by scaling factors of the N filters respectively. A first mixer of (N-1) mixers(40-1~40-n-1) blends output signals of two filters among the N filters. An ith mixer blends output signals of a (i-1)th mixer and a jth filter wherein i is larger than 1 and the same as or smaller than (N-1) and j is i + 1.
Abstract translation: 目的：提供一种图像处理方法及其装置，以使用多个滤波器更好地形成图像。 构成：N个滤波器（30-1〜30-n）分别接收输入像素数据。 输入像素数据分别由N个滤波器的缩放因子缩放。 （N-1）混合器（40-1〜40-n-1）的第一混频器混合N个滤波器中的两个滤波器的输出信号。 第i混合器混合第（i-1）混频器和第j滤波器的输出信号，其中i大于1并且等于或小于（N-1），并且j是i + 1。
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公开(公告)号：KR1020090103121A
公开(公告)日：2009-10-01
申请号：KR1020080028510
申请日：2008-03-27
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L21/8242 , H01L21/205 , H01L21/316
CPC classification number: H01L27/11521 , H01L21/28273 , H01L27/10852 , H01L28/75 , H01L28/90
Abstract: PURPOSE: A semiconductor manufacturing method is provided to apply the complex zirconium oxide layer to the various devices and to achieve high integration. CONSTITUTION: The semiconductor manufacturing method comprises as follows. The bottom electrode is formed on the semiconductor substrate(100). The first zirconium precursor source is adsorbed on the bottom electrode(180) and the non-reactive source is removed. The supply zirconium oxide layer(187) is supplied to the first zirconium precursor adsorption layer. The second zirconium precursor source is adsorbed on the zirconium oxide layer and the non-reactive source is removed. The second zirconium precursor adsorption layer is formed by supplying zirconium acid nitride film layer(188). The upper electrode is formed on the nitrified zirconium oxynitride film.
Abstract translation: 目的：提供半导体制造方法以将复合氧化锆层应用于各种器件并实现高集成度。 构成：半导体制造方法如下。 底电极形成在半导体衬底（100）上。 第一锆前体源被吸附在底部电极（180）上，并且去除非反应源。 向第一锆前体吸附层供给供给氧化锆层（187）。 第二锆前体源被吸附在氧化锆层上，并且去除非反应源。 第二锆前体吸附层是通过提供锆酸氮化物膜层（188）形成的。 在硝化氮氧化锆膜上形成上电极。
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公开(公告)号：KR1020090041585A
公开(公告)日：2009-04-29
申请号：KR1020070107187
申请日：2007-10-24
Applicant: 삼성전자주식회사
Inventor： 송민우
IPC: H04R3/00
CPC classification number: H04R3/04 , G01K7/22 , H04R2307/025
Abstract: An apparatus and a method for optimizing the audio output are provided to prevent the degradation of the audio sound quality by periodically measuring the inner temperature of the speaker module unit. An apparatus(100) for optimizing the audio output comprises a wireless transceiver(110), a data processing unit(120), an audio processing unit(130), a video color deflection unit(140), a key input unit(150), a display unit(160), a speaker module unit(170), a temperature measuring unit(175), a memory unit(180), and a controller(190). The wireless transceiver performs the radio communications of the apparatus for optimizing the audio output. The speaker module unit outputs the audio data including one or more speaker. The temperature measuring unit periodically measures the inner temperature of the speaker module unit and notifies to the controller. The display unit displays the inner temperature of the measured speaker module unit. The memory unit stores the information about the inner temperature of the measured speaker module unit. The controller controls in order to output the optimized audio data.
Abstract translation: 提供一种用于优化音频输出的装置和方法，以通过周期性地测量扬声器模块单元的内部温度来防止音频声音质量的恶化。 一种用于优化音频输出的装置（100）包括无线收发器（110），数据处理单元（120），音频处理单元（130），视频颜色偏转单元（140），键输入单元（150） ，显示单元（160），扬声器模块单元（170），温度测量单元（175），存储单元（180）和控制器（190）。 无线收发器执行用于优化音频输出的设备的无线电通信。 扬声器模块单元输出包括一个或多个扬声器的音频数据。 温度测量单元周期性地测量扬声器模块单元的内部温度并通知控制器。 显示单元显示测量的扬声器模块单元的内部温度。 存储单元存储关于所测量的扬声器模块单元的内部温度的信息。 控制器控制以输出优化的音频数据。
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公开(公告)号：KR1020080005656A
公开(公告)日：2008-01-15
申请号：KR1020060064250
申请日：2006-07-10
Applicant: 삼성전자주식회사 , 한국에이에스엠지니텍 주식회사
CPC classification number: C01G25/02 , C01G23/047 , C01G27/02 , C01G35/00 , C01P2006/40
Abstract: A method for forming metal oxide, and a device thereof are provided to produce the metal oxide with improved electric performance. In a method for forming metal oxide, metal precursor gas is flowed and supplied along a surface of a substrate(10) to form a metal precursor layer on the substrate. Oxide gas which includes ozone is flowed and supplied along the surface of the metal precursor layer to oxidize the metal precursor layer. RF power is given to the oxide gas which is flowed along the surface of the metal precursor layer to promote reaction between the metal precursor layer and the oxide gas. A device(100) thereof includes a substrate stage(200), a chamber(300), and an RF power source(900). The substrate stage includes a supporting zone(210) supporting the substrate, and a circumferential zone(220) covering the supporting zone. The chamber is positioned on the circumferential zone of the substrate stage to limit a space which the substrate is positioned. The chamber supplies metal precursor gas along the surface of the substrate to form the metal precursor layer on the substrate. The chamber has a gas induction port to supply the oxide gas with the ozone along the surface of the metal precursor layer to oxidize the metal precursor layer. The RF power source is connected with the chamber to give the RF power to the oxide gas which flows along the surface of the metal precursor layer to promote the reaction between the metal precursor layer and the oxide gas.
Abstract translation: 提供了形成金属氧化物的方法及其装置，以产生具有改善的电性能的金属氧化物。 在形成金属氧化物的方法中，金属前驱体气体沿衬底（10）的表面流动并供应以在衬底上形成金属前体层。 包含臭氧的氧化物气体沿着金属前体层的表面流动并供应以氧化金属前体层。 对沿着金属前体层的表面流动的氧化物气体进行RF功率以促进金属前体层和氧化物气体之间的反应。 其装置（100）包括衬底台（200），室（300）和RF电源（900）。 衬底台包括支撑衬底的支撑区域（210）和覆盖支撑区域的周向区域（220）。 腔室位于衬底台的圆周区域上，以限制衬底定位的空间。 该腔室沿衬底的表面提供金属前体气体，以在衬底上形成金属前体层。 该室具有气体导入口，用于沿着金属前体层的表面供应氧化物气体与臭氧，以氧化金属前体层。 RF电源与腔室连接，以向沿着金属前体层的表面流动的氧化物气体提供RF功率，以促进金属前体层和氧化物气体之间的反应。
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公开(公告)号：KR1020070010295A
公开(公告)日：2007-01-24
申请号：KR1020050064766
申请日：2005-07-18
Applicant: 삼성전자주식회사
IPC: H01L27/108
CPC classification number: H01L28/75 , H01L23/5223
Abstract: A semiconductor device with an MIM capacitor is provided to avoid oxidation of a first conductive layer for a lower electrode in a subsequent process for forming a dielectric layer by forming a second conductive layer made of a metal nitride layer resistant to oxidation. A first conductive layer(102) for a lower electrode of an MIM capacitor in which a trench(104) is formed is formed on a semiconductor substrate. A second conductive layer(106) is formed on the first conductive layer and in the trench, used as a lower electrode of an MIM capacitor and made of a metal nitride layer resistant to oxidation. A dielectric layer(108) is formed on the second conductive layer, made of a nitride layer or an oxide layer. An upper electrode(110a) of an MIM capacitor is formed on the dielectric layer. The second conductive layer is composed of TiN, TaN, WN or a composition thereof.
Abstract translation: 提供具有MIM电容器的半导体器件，以避免在用于形成电介质层的后续工艺中用于下电极的第一导电层的氧化，形成由抗氧化的金属氮化物层制成的第二导电层。 在半导体衬底上形成用于形成沟槽（104）的MIM电容器的下电极的第一导电层（102）。 第二导电层（106）形成在第一导电层上和沟槽中，用作MIM电容器的下电极并由耐氧化的金属氮化物层制成。 在由氮化物层或氧化物层制成的第二导电层上形成介电层（108）。 在电介质层上形成MIM电容器的上电极（110a）。 第二导电层由TiN，TaN，WN或其组成构成。
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