公开(公告)号：KR1020100069270A

公开(公告)日：2010-06-24

申请号：KR1020080127918

申请日：2008-12-16

Applicant: 성균관대학교산학협력단

Inventor： 최병덕 ,  이준신 ,  정성욱 ,  장경수 ,  조재현

IPC: G02F1/136 ,  H01L29/786

CPC classification number: H01L29/78606 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78618

Abstract: PURPOSE: A thin film transistor, a method for forming the same, and a flat panel display device with the same are provided to prevent loss of a drain area, thereby improving lifetime and performance. CONSTITUTION: A buffer layer(13), a preliminary channel area, an insulating layer, and a gate electrode layer are successively formed on a substrate(11). The gate electrode layer and the insulating layer are patterned successively so that a gate pattern(22) is formed. Impurity is doped in the exposed preliminary channel area to define a channel area(15). A protection layer(27) is formed on the front side of the substrate with source and drain areas. The first contact hole(29) and the second contact hole(31) exposing the buffer layer are formed.

Abstract translation: 目的：提供一种薄膜晶体管，其形成方法和具有该薄膜晶体管的平板显示装置，以防止漏区的损失，从而提高寿命和性能。 构成：在衬底（11）上依次形成缓冲层（13），初步沟道区，绝缘层和栅极电极层。 栅极电极层和绝缘层依次图案化，形成栅极图案（22）。 掺杂在暴露的初步通道区域中以限定通道区域（15）。 在源极和漏极区域的衬底的正面上形成保护层（27）。 形成露出缓冲层的第一接触孔（29）和第二接触孔（31）。