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公开(公告)号：KR101745616B1
公开(公告)日：2017-06-12
申请号：KR1020100053598
申请日：2010-06-07
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
Abstract: 불연속영역을포함하는나노구조체및 이를포함하는열전소자에대해개시된다. 개시된나노구조체는내부에결함영역등의불연속영역이형성된것으로열전소자등의응용시열전체의포논산란효과를유도하며열전효율을증가시킬수 있다.
Abstract translation: 公开了包含不连续区域的纳米结构和包含该纳米结构的热电装置。 所公开的纳米结构在其中形成有诸如缺陷区域的不连续区域，其可以引起整个施加序列（诸如热电元件）的声子散射效应并提高热电效率。
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公开(公告)号：KR101611422B1
公开(公告)日：2016-04-12
申请号：KR1020090110922
申请日：2009-11-17
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: H01L29/413 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02527 , H01L21/02554 , H01L21/02639 , H01L21/02653 , H01L29/0665 , H01L29/0676 , H01L29/1606 , H01L51/0048
Abstract: 그래핀과나노구조체의복합구조체및 그제조방법이개시된다. 개시된복합구조체는적어도하나의그래핀(graphene)과, 이그래핀을관통하도록형성되는것으로, 1차원형상을가지는적어도하나의나노구조체;를포함한다.
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公开(公告)号：KR101538742B1
公开(公告)日：2015-07-30
申请号：KR1020090015872
申请日：2009-02-25
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: B82B3/00
CPC classification number: H01L21/02532 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02521 , H01L21/02603 , H01L21/0262 , H01L21/02639
Abstract: 나노와이어의합성방법이개시된다. 개시된합성방법은, 기판상에게르마늄을포함하는제1 산화물층을형성하는단계; 상기제1 산화물층을열처리하여핵(nuclei)을포함하는제2 산화물층을형성하는단계; 및화학기상증착법에의해상기핵으로부터게르마늄을포함하는나노와이어(nanowire)를성장시키는단계;를포함한다.
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Patent Agency Ranking
公开(公告)号：KR1020140085113A
公开(公告)日：2014-07-07
申请号：KR1020120155320
申请日：2012-12-27
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/1606 , C01B32/182
Abstract: Disclosed are a method of transferring graphene and a method of manufacturing a device using the same. The method of transferring graphene includes the steps of: forming a graphene layer on a substrate containing a base metal catalyst (for example, a semiconductor catalyst); forming a thin film on the graphene layer; and separating a lamination structure of the graphene layer and the thin film from the substrate. The base metal catalyst (for example, a semiconductor catalyst) may contain at least one among Ge and SiGe. The thin film may include an inorganic thin film and may have a single layered structure or a multi-layered structure. The step of separating a lamination structure from a substrate may be performed by a physical detachment process. After the step of separating the lamination structure from the substrate, a step of forming an organic film on the substrate may be further performed.
Abstract translation: 公开了转移石墨烯的方法和使用其制造器件的方法。 转移石墨烯的方法包括以下步骤：在含有贱金属催化剂（例如半导体催化剂）的基材上形成石墨烯层; 在石墨烯层上形成薄膜; 以及从所述基板分离所述石墨烯层和所述薄膜的层叠结构。 贱金属催化剂（例如，半导体催化剂）可以含有Ge和SiGe中的至少一种。 薄膜可以包括无机薄膜，并且可以具有单层结构或多层结构。 分离层压结构与基板的步骤可以通过物理分离工艺进行。 在将层叠结构与基板分离的步骤之后，可以进一步进行在基板上形成有机膜的工序。
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公开(公告)号：KR1020140051637A
公开(公告)日：2014-05-02
申请号：KR1020120117911
申请日：2012-10-23
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82B3/0009 , C01B32/182 , C01B32/194
Abstract: Provided are a nanowire-graphene structure, a device including the same, and a manufacturing method thereof. The manufacturing method for a nanowire-graphene structure of the present invention includes: a step of growing a graphene layer on a substrate; a step of growing a plurality of nanowires on the graphene layer; and a step of separating the graphene layer from the substrate, wherein the substrate is made of a material which does not form a covalent bond with the graphene layer.
Abstract translation: 提供了纳米线 - 石墨烯结构，包括该纳米线 - 石墨烯结构的装置及其制造方法。 本发明的纳米线 - 石墨烯结构的制造方法包括：在基板上生长石墨烯层的工序; 在石墨烯层上生长多个纳米线的步骤; 以及从所述基板分离所述石墨烯层的步骤，其中所述基板由与所述石墨烯层不形成共价键的材料制成。
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28.发明授权
公开(公告)号：KR101345432B1
公开(公告)日：2013-12-27
申请号：KR1020070129907
申请日：2007-12-13
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: B82B3/00
CPC classification number: H01L29/0665 , B82Y10/00 , C30B25/00 , C30B29/06 , C30B29/60 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L29/0673 , H01L29/0676 , Y10S977/762 , Y10S977/89 , Y10S977/891 , Y10S977/892 , Y10S977/893
Abstract: 본발명은무촉매단결정실리콘나노와이어의제조방법, 그에의해형성된나노와이어및 이를포함하는나노소자에관한것으로, 이러한나노와이어는제조시 금속촉매를사용하지않음으로써합성이간편하고경제적일뿐 아니라, 금속촉매에의한불순물함입을방지하여나노와이어의전기및 광특성을향상시킬수 있다.
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公开(公告)号：KR1020110064703A
公开(公告)日：2011-06-15
申请号：KR1020090121410
申请日：2009-12-08
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
CPC classification number: B82Y40/00 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L31/035209 , H01L31/035227
Abstract: PURPOSE: A porous nanostructure and a producing method thereof are provided to remarkably increase the surface area of the nanostructure by producing pores on the surface and the inside of the nanostructure. CONSTITUTION: A porous nanostructure includes pores(12) formed on the surface and the inside of the nanostructure(10). The pores are through-holes. The nanostructure is either a nanotube or a nanowire. The nanostructure contains a p-type or an n-type dopant. A producing method of the nanostructure comprises the following steps: attaching nanoparticles on the surface of the nanostructure; oxidizing the nanostructure for forming oxides on the surface of the nanostructure; and removing the oxides and the nanoparticles from the nanostructure.
Abstract translation: 目的：提供一种多孔纳米结构及其制造方法，通过在纳米结构的表面和内部产生孔，显着增加纳米结构的表面积。 构成：多孔纳米结构包括在纳米结构（10）的表面和内部形成的孔（12）。 毛孔是通孔。 纳米结构是纳米管或纳米线。 纳米结构包含p型或n型掺杂剂。 纳米结构的制备方法包括以下步骤：在纳米结构的表面上附着纳米颗粒; 氧化在纳米结构表面上形成氧化物的纳米结构; 并从纳米结构中除去氧化物和纳米颗粒。
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公开(公告)号：KR20210025755A
公开(公告)日：2021-03-10
申请号：KR20190105209
申请日：2019-08-27
Applicant: 성균관대학교산학협력단
IPC: B01J35/00 , B01J21/06 , B01J21/18 , B01J23/745 , B01J37/08 , C25B1/04 , H01M4/86 , H01M4/90 , H01M4/92
Abstract: 본원은탄소기재, 상기탄소기재상에분산된금속산화물입자, 및금속촉매입자를포함하고, 상기금속촉매입자는상기금속산화물입자의금속을치환하여존재하는것 또는상기금속산화물입자에흡착되어존재하는것인, 전기화학촉매에관한것이다.
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