公开(公告)号：KR3006229590000S

公开(公告)日：2011-11-29

申请号：KR3020110021840

申请日：2011-05-29

Applicant: 조선대학교산학협력단

Designer： 김남훈

公开(公告)号：KR100744099B1

公开(公告)日：2007-08-01

申请号：KR1020060033371

申请日：2006-04-12

Applicant: 조선대학교산학협력단

Inventor： 이우선 ,  고필주 ,  김남훈 ,  서용진

IPC: H01L21/02 ,  H01L21/304

Abstract: A slurry supply nozzle for chemical mechanical polishing equipment is provided to enhance the polishing rate of an object by using the hot slurry. A slurry supply nozzle(10) is communicated with a pump for circulating slurry so that it supplies the slurry onto a pad. A temperature sensor(12) is mounted on the nozzle to detect a temperature of the slurry supplied to the nozzle, and a heat coil(14) is wound around an outer periphery of the nozzle to heat the slurry so that the hot slurry is supplied on the pad attached to a polishing table(30). The temperature sensor and the heat wire are controlled by a controller(16).

Abstract translation: 提供用于化学机械抛光设备的浆料供应喷嘴，以通过使用热浆料来提高物体的抛光速率。 浆料供应喷嘴（10）与用于循环浆料的泵连通，以便将浆料供应到垫上。 温度传感器（12）安装在喷嘴上以检测供应到喷嘴的浆液的温度，并且加热线圈（14）缠绕在喷嘴的外周边上以加热浆液，从而供应热浆液 在连接到抛光台（30）的垫上。 温度传感器和加热丝由控制器（16）控制。

公开(公告)号：KR1020170005659A

公开(公告)日：2017-01-16

申请号：KR1020150096023

申请日：2015-07-06

Applicant: 조선대학교산학협력단 ,  허영민 ,  범철원

Inventor： 허영민 ,  범철원 ,  김남훈

IPC: F21S9/00 ,  F21S2/00 ,  F21V17/10 ,  F21K99/00 ,  F21V33/00 ,  H05B37/02 ,  F21V23/04 ,  F21V3/04

Abstract: 본발명은자기유도방식을이용한항공장애표시등에관한것으로, 자기장을발생하는고압송전선로, 낙뢰로부터상기송전선로를보호하기위한가공지선및 상기가공지선에설치되는항공장애표시등에있어서, 상기고압송전선로의설치여부를육안으로식별되도록내부에발광체가구비된항공장애구; 상기항공장애구를상기가공지선에고정시키기위한연결조인트; 및상기연결조인트의하부에구비되며상기고압송전선로에서발생하는자기장을유도하여전력을발생및 저장하기위한자기유도부를포함하되, 상기항공장애구는상기자기유도부와탈착되고, 상기발광체는상기자기유도부를통해유도된전력으로점등되는것을특징으로한다.

公开(公告)号：KR3008439610000S

公开(公告)日：2016-03-11

申请号：KR3020150036434

申请日：2015-07-20

Applicant: 조선대학교산학협력단

Designer： 김남훈

公开(公告)号：KR3008373550000S

公开(公告)日：2016-02-01

申请号：KR3020150036426

申请日：2015-07-20

Applicant: 조선대학교산학협력단

Designer： 김남훈

公开(公告)号：KR3008302450000S

公开(公告)日：2015-12-16

申请号：KR3020150036431

申请日：2015-07-20

Applicant: 조선대학교산학협력단

Designer： 김남훈

公开(公告)号：KR3008189790000S

公开(公告)日：2015-10-08

申请号：KR3020150036429

申请日：2015-07-20

Applicant: 조선대학교산학협력단

Designer： 김남훈

公开(公告)号：KR1020140097646A

公开(公告)日：2014-08-07

申请号：KR1020130009268

申请日：2013-01-28

Applicant: 조선대학교산학협력단

Inventor： 김남훈 ,  박찬일

IPC: H01L31/042 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/18 ,  H01L31/042

Abstract: The present invention relates to a method for annealing a CdTe thin film solar cell by using a 808-nm diode laser. The purpose of the present invention is to improve particle growth and the crystal of a thin film by performing a laser annealing process on a CdTe thin film by using a CW 808-nm diode laser and to analyze a structure and an optical property, light transmittance, absorption coefficient, crystal size, etc., by performing an annealing process with various laser outputs. To achieve the purpose, the present invention includes (a) a process of depositing a CdTe thin film by a CdTe target; and (b) a process of annealing the deposited CdTe thin film by using a diode laser.

Abstract translation: 本发明涉及使用808nm二极管激光器对CdTe薄膜太阳能电池进行退火的方法。 本发明的目的是通过使用CW 808纳米二极管激光器对CdTe薄膜进行激光退火处理，并且分析结构和光学特性，透光率 ，吸收系数，晶体尺寸等，通过用各种激光输出进行退火处理。 为了实现该目的，本发明包括（a）通过CdTe靶沉积CdTe薄膜的工艺; 和（b）使用二极管激光器对沉积的CdTe薄膜进行退火的工艺。

公开(公告)号：KR1020140097645A

公开(公告)日：2014-08-07

申请号：KR1020130009267

申请日：2013-01-28

Applicant: 조선대학교산학협력단

Inventor： 김남훈 ,  오성하 ,  이우선

IPC: H01L31/0749 ,  H01L31/032 ,  H01L31/18 ,  C23C14/34

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/0749 ,  C23C14/34 ,  H01L31/032 ,  H01L31/18

Abstract: The present invention relates to a method for manufacturing a CIGS thin film using a non-selenization sputtering process with a CuSe2 target. The purpose of the present invention is to provide a method for manufacturing a CIGS thin film by performing a sputtering deposition process with a CuSe2 target. To achieve the purpose, the present invention includes (a) a step of performing a free sputtering process on a CuSe2 target prepared on a substrate; (b) a step of performing an RF magnetron sputtering process; and (c) a step of depositing an In and Ga target on the CuSe2 thin film by performing an RF sputtering process to generate a Ga/In/CuSe2 multilayer stack structure.

Abstract translation: 本发明涉及使用CuSe 2靶的非硒化溅射法制造CIGS薄膜的方法。 本发明的目的是提供一种通过用CuSe 2靶进行溅射沉积工艺制造CIGS薄膜的方法。 为了实现该目的，本发明包括（a）对在基板上制备的CuSe 2靶进行自由溅射工艺的步骤; （b）执行RF磁控溅射工艺的步骤; 以及（c）通过进行RF溅射工艺以生成Ga / In / CuSe 2多层堆叠结构，在CuSe 2薄膜上沉积In和Ga靶的步骤。

公开(公告)号：KR3007316500000S

公开(公告)日：2014-03-10

申请号：KR3020130049504

申请日：2013-09-30

Applicant: 조선대학교산학협력단

Designer： 김남훈