公开(公告)号：KR1020050019158A

公开(公告)日：2005-03-03

申请号：KR1020030056761

申请日：2003-08-18

Applicant: 주성엔지니어링(주)

Inventor： 정순빈 ,  한정훈

IPC: H01L21/02

Abstract: PURPOSE: A method for forming a fluid path in the outer wall of a process chamber body is provided to prevent the corrosion of chamber body using as a circulation passage of coolant or heating fluid. CONSTITUTION: A groove of one or more is formed along the outer wall(120) of process chamber body. A pipe(124) is inserted into the groove. An insert(126) is inserted on the top of the pipe. An insert supporting material(128) is inserted on the top of the insert. The pipe is made of copper. The insert and the insert supporting material are made of aluminium.

Abstract translation: 目的：提供一种用于在处理室主体的外壁中形成流体路径的方法，以防止作为冷却剂或加热流体的循环通道的室主体的腐蚀。 构成：沿着处理室主体的外壁（120）形成一个或多个凹槽。 管道（124）插入槽中。 插入件（126）插入管子的顶部。 刀片支撑材料（128）插入刀片的顶部。 管由铜制成。 刀片和刀片支撑材料由铝制成。

公开(公告)号：KR102066414B1

公开(公告)日：2020-01-15

申请号：KR1020190065120

申请日：2019-06-03

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  서승훈 ,  황철주

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  C23C16/455

公开(公告)号：KR102051611B1

公开(公告)日：2019-12-04

申请号：KR1020190002144

申请日：2019-01-08

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  이상돈

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/67

公开(公告)号：KR101984524B1

公开(公告)日：2019-05-31

申请号：KR1020120073591

申请日：2012-07-06

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  황철주 ,  김도형 ,  서승훈

IPC: H01L21/205

公开(公告)号：KR101854242B1

公开(公告)日：2018-05-03

申请号：KR1020120019070

申请日：2012-02-24

Applicant: 주성엔지니어링(주)

Inventor： 이상돈 ,  한정훈

IPC: H01L21/205

Abstract: 본발명은기판상에분사되는소스가스와반응가스를공간적으로분리하여기판에증착되는박막의증착균일도를증가시킬수 있도록한 기판처리장치및 이를이용한기판처리방법에관한것으로, 본발명에따른기판처리장치는공정챔버; 상기공정챔버에설치되어적어도하나의기판을지지하는기판지지부; 상기기판지지부에대향되도록상기공정챔버의상부를덮는챔버리드; 및상기챔버리드에방사형태로설치되어상기기판지지부에국부적으로대향되며, 접지전극들사이에마련된적어도하나의가스분사공간에공급되는가스를상기기판지지부상에국부적으로분사하는복수의가스분사모듈을가지는가스분사부를포함하고, 상기가스분사공간의내측과상기가스분사공간의외측의가스분사량은상이한것을특징으로한다.

公开(公告)号：KR101834984B1

公开(公告)日：2018-04-19

申请号：KR1020120019065

申请日：2012-02-24

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  이상돈

IPC: H01L21/205

Abstract: 본발명은기판상에분사되는소스가스와반응가스를공간적으로분리하여기판에증착되는박막의증착균일도를증가시킬수 있도록한 기판처리장치및 이를이용한기판처리방법에관한것으로, 본발명에따른기판처리장치는공정챔버; 상기공정챔버에설치되어적어도하나의기판을지지하는기판지지부; 상기기판지지부에대향되도록상기공정챔버의상부를덮는챔버리드; 및상기챔버리드에방사형태로설치되어상기기판지지부에국부적으로대향되며, 접지전극들사이에마련된적어도하나의가스분사공간에공급되는가스를상기기판지지부상에국부적으로분사하는복수의가스분사모듈을가지는가스분사부를포함하고, 상기복수의가스분사모듈중 일부의가스분사모듈은상기가스분사공간의내측과외측사이에상이한밀도를가지는플라즈마를형성하는것을특징으로한다.

公开(公告)号：KR1020140032466A

公开(公告)日：2014-03-14

申请号：KR1020140019738

申请日：2014-02-20

Applicant: 주성엔지니어링(주)

Inventor： 한정훈 ,  김영훈 ,  황철주

IPC: H01L21/205

Abstract: The present invention relates to a substrate processing device and a method thereof capable of equalizing the film quality feature of a thin film and controlling film quality of the thin film. The substrate processing device comprises a processing chamber which comprises a processing space; a chamber lead which covers the upper surface of the processing chamber; a substrate support unit which is installed inside the processing chamber and supports one or more substrates; a source gas spray unit which is installed in the chamber lead and comprises a plurality of source gas spray modules which sprays source gas to a source gas spray area positioned on the substrate support unit; a response gas spray unit which is positioned in the chamber lead and comprises a plurality of response gas spray modules which sprays response gas to a response gas spray area positioned on the substrate support unit; and a purge gas spray unit which is positioned in the chamber lead and forms a gas wall for dividing the source gas spray unit and the response gas spray unit by spraying the purge gas to a space between the source gas spray unit and the response gas spray unit The number of the source gas spray modules is more than the number of the response gas spray modules.

Abstract translation: 本发明涉及能够使薄膜的膜质量特性均匀化并且控制薄膜的膜质量的基板处理装置及其方法。 基板处理装置包括处理室，其包括处理空间; 覆盖处理室的上表面的室引线; 基板支撑单元，其安装在处理室内并支撑一个或多个基板; 源气体喷射单元，其安装在腔室引线中并且包括多个源气体喷射模块，其将源气体喷射到位于基板支撑单元上的源气体喷射区域; 响应气体喷射单元，其位于腔室引线中并且包括多个响应气体喷射模块，其将响应气体喷射到位于衬底支撑单元上的响应气体喷射区域; 以及吹扫气体喷射单元，其被定位在腔室引线中并形成用于通过将净化气体喷射到源气体喷射单元和响应气体喷射之间的空间来分离源气体喷射单元和响应气体喷射单元的气体壁 单位源气体喷雾模块的数量大于响应气体喷射模块的数量。

公开(公告)号：KR1020130137305A

公开(公告)日：2013-12-17

申请号：KR1020120060767

申请日：2012-06-07

Applicant: 주성엔지니어링(주)

Inventor： 서승훈 ,  한정훈 ,  이상돈 ,  최규진

IPC: H01L21/205

Abstract: The present invention relates to an apparatus for processing a substrate. The apparatus for processing a substrate comprises: a processing chamber; a substrate supporting unit which is installed inside the processing chamber to support at least one substrate and able to rotate in a given direction; a chamber lid which faces the substrate supporting unit and covers the top of the processing chamber; a gas release unit which is connected to the chamber lid and includes a plurality of gas release modules for releasing a gas onto the substrate. The substrate supporting unit includes: a base consisting of carbon-based materials; a middle layer formed on the base; and a coating layer which includes aluminum oxide and is formed on the middle layer, wherein the middle layer is characterized by including an oxide containing titanium.

Abstract translation: 本发明涉及一种用于处理衬底的设备。 用于处理衬底的设备包括：处理室; 基板支撑单元，其安装在处理室内部以支撑至少一个基板并且能够沿给定方向旋转; 腔室盖，其面向衬底支撑单元并且覆盖处理室的顶部; 气体释放单元，其连接到室盖并且包括用于将气体释放到基板上的多个气体释放模块。 基板支撑单元包括：由碳基材料构成的基体; 形成在基座上的中间层; 以及包含氧化铝并形成在中间层上的涂层，其中中间层的特征在于包含含有钛的氧化物。

公开(公告)号：KR1020130133923A

公开(公告)日：2013-12-10

申请号：KR1020120057045

申请日：2012-05-30

Applicant: 주성엔지니어링(주)

Inventor： 황철주 ,  한정훈 ,  서승훈

IPC: H01L21/205 ,  H01L31/18

CPC classification number: Y02P70/521 ,  H01L31/18 ,  H01L21/205

Abstract: The present invention relates to a substrate processing device. The substrate processing device includes a process chamber; a substrate support unit installed in the process chamber to support one or more substrates and rotating in a predetermined direction so that a rotation speed can be changed; a chamber lid covering the upper part of the process chamber while facing the substrate support unit; and a gas spray unit connected to the chamber lid and including a plurality of gas spray modules spraying gas to the substrate. The gas spray modules includes a first gas spray space spraying first gas and a second gas spray space spraying second gas which are spatially separated. The substrate support unit is lifted by being connected to a predetermined lifting device so that a gap between the gas spray module and the substrate support unit can be changed.

Abstract translation: 本发明涉及一种基板处理装置。 基板处理装置包括处理室; 基板支撑单元，安装在所述处理室中以支撑一个或多个基板并沿预定方向旋转，从而可以改变转速; 覆盖处理室的上部同时面向基板支撑单元的室盖; 以及连接到所述室盖并且包括将气体喷射到所述基板的多个气体喷射模块的气体喷射单元。 气体喷射模块包括喷射第一气体的第一气体喷射空间和喷射空间分离的第二气体的第二气体喷射空间。 通过连接到预定的提升装置来提升基板支撑单元，从而可以改变气体喷射模块和基板支撑单元之间的间隙。

公开(公告)号：KR1020110031132A

公开(公告)日：2011-03-24

申请号：KR1020100091752

申请日：2010-09-17

Applicant: 주성엔지니어링(주)

Inventor： 강승모 ,  한정훈 ,  유경한 ,  이주호

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02263 ,  H01L21/02164 ,  H01L21/76802

Abstract: PURPOSE: A method for depositing an oxide layer and a method for forming a via contact using the same are provided to deposit an oxide layer with a uniform thickness in a contact hole with a high aspect ratio through a chemical vapor deposition method using a liquid reaction material and silicon material with liquid chlorine. CONSTITUTION: An object(10) including a contact hole(11) with an aspect ratio of 1:3 or more is prepared. An oxide layer(20) is formed on the inner surface of the contact hole of the object. The oxide layer is deposited by supplying a silicon source with chlorine and reaction materials to a chamber with a temperature of 25 to 200 degrees centigrade. The oxide layer has a step coverage property of 85% or more and a deposition rate of 150 Å/min or more.

Abstract translation: 目的：提供一种用于沉积氧化物层的方法和使用其的形成通孔接触的方法，以通过使用液体反应的化学气相沉积法在高纵横比的接触孔中沉积具有均匀厚度的氧化物层 材料和硅材料与液氯。 构成：准备包括纵横比为1:3以上的接触孔（11）的物体（10）。 在物体的接触孔的内表面上形成氧化物层（20）。 通过将硅源和反应材料供给到温度为25至200摄氏度的室中来沉积氧化物层。 氧化物层的台阶覆盖率为85％以上，析出速度为150 / min以上。