용액공정 기반의 벌크 헤테로 접합 무기 박막 태양전지 제조 방법
    21.
    发明公开
    용액공정 기반의 벌크 헤테로 접합 무기 박막 태양전지 제조 방법 有权
    大容量无机无机薄膜太阳能电池的制造

    公开(公告)号:KR1020120140078A

    公开(公告)日:2012-12-28

    申请号:KR1020110059713

    申请日:2011-06-20

    CPC classification number: Y02E10/50 Y02P70/521 H01L31/18 H01L31/072

    Abstract: PURPOSE: A method for manufacturing a bulk hetero junction inorganic thin film solar cell based on a solution process is provided to improve solar cell efficiency by minimizing a moving distance between an electrode and electrons or holes by a bulk hetero junction. CONSTITUTION: A ClG precursor-n type semiconductor nanoparticle paste or ink is obtained by adding polymer binder after the n type semiconductor nanoparticle dispersion solutions are mixed with Cu, In, and Ga precursor solutions(101). After a conductive substrate is coated with ClG precursor-n type semiconductor nanoparticle paste or ink(102), a ClG oxide-n type semiconductor mixed thin film is made by a thermal process under an air or oxygen atmosphere(103). Sulfurization or selenization ClGS-n type semiconductor thin film is made by thermally processing the ClG oxide thin film under sulfurization or selenization gas atmosphere(104). [Reference numerals] (100) Cu, In, Ga precursor; (101) CIG precursor-N type semiconductor nanoparticles mixing paste; (102) Mixed paste coating; (103) Thermal process 1 ClG-N type semiconductor mixed thin film; (104) Thermal process 2 sulfurization or selenization CIGS-N type semiconductor mixed thin film; (105) Manufacturing a device

    Abstract translation: 目的:提供一种用于制造基于溶液工艺的体异质结无机薄膜太阳能电池的方法,以通过使体异质结最小化电极与电子或空穴之间的移动距离来提高太阳能电池的效率。 构成:在n型半导体纳米颗粒分散液与Cu,In和Ga前体溶液(101)混合之后,通过加入聚合物粘合剂获得ClG前体n型半导体纳米颗粒糊或油墨。 在用ClG前体n型半导体纳米粒子糊剂或墨水(102)涂覆导电性基材之后,通过在空气或氧气氛下的热处理(103)制造ClG氧化物n型半导体混合薄膜。 硫化或硒化ClGS-n型半导体薄膜是通过在硫化或硒化气体气氛下热处理ClG氧化物薄膜制成的(104)。 (100)Cu,In,Ga前体; (101)CIG前驱体-N型半导体纳米粒子混合糊剂; (102)混合糊涂; (103)热工艺1 ClG-N型半导体混合薄膜; (104)热处理2硫化或硒化CIGS-N型半导体混合薄膜; (105)制造设备

    1,2,3,3,3-펜타플루오로프로펜 제조방법

    公开(公告)号:KR1020180082822A

    公开(公告)日:2018-07-19

    申请号:KR1020170004186

    申请日:2017-01-11

    Abstract: 본발명에서는헥사플루오로프로필렌(HFP)으로부터 1,2,3,3,3-펜타플루오로프로펜(HFO-1225ye)을제조하는방법을제공한다. 1,2,3,3,3-펜타플루오로프로펜은온난화지수가매우낮으며오존층파괴능이없는냉매인 2,3,3,3-테트라플루오로프로펜(HFO-1234yf)의중간생성물로서 HFP와수소를수소화촉매상에서수소화반응시켜 1,1,2,3,3,3-헥사플루오로프로판(HFC-236ea)을생성하는단계; 상기 HFC-236ea를탈불화수소촉매상에서탈불화수소반응시켜 HFO-1225ye 제조하는단계를거쳐제조한다. HFP를수소와기상에서반응시켜 HFC-236ea를제조할때, 반응에소비되는수소만을적절하게투입함으로써미반응수소를분리및 순환시키는공정을없앨수 있고, 과량의수소에의한부반응을억제시킨다. 수소화반응에서생성된기체상태의생성물(HFC-236ea)을별도의분리단계없이기상의탈불화수소화반응에직접투입하여 HFO-1225ye를제조한다. 또한본 발명에서는 HFP 수소화반응의반응열을효율적으로제거하고반응온도를제어하기위해 HFC-236ea 탈불화수소화반응에서미반응한 HFC-236ea를적정량수소화반응기로순환시키는방법을사용한다.

    초임계유체를 이용한 그래핀 시트 또는 그래핀 입자의 제조방법
    30.
    发明公开
    초임계유체를 이용한 그래핀 시트 또는 그래핀 입자의 제조방법 有权
    使用超临界流体的石墨片或石墨颗粒的制造方法

    公开(公告)号:KR1020120079435A

    公开(公告)日:2012-07-12

    申请号:KR1020110034741

    申请日:2011-04-14

    CPC classification number: Y02P20/544 C01B32/192 H01B1/04

    Abstract: PURPOSE: A method for manufacturing graphene sheets or graphene particles based on supercritical fluid is provided to mass-produce the graphene sheets or graphene particles of high quality by implementing deoxygenation with respect to graphene oxide under a supercritical fluid condition. CONSTITUTION: A method for manufacturing graphene sheets or graphene particles based on supercritical fluid includes the following: graphene oxide is dispersed in an alcohol solvent to form a graphene oxide dispersed solution; the graphene oxide dispersed solution is reduced under a supercritical condition to form graphene sheets or graphene particles; and the graphene sheets or the graphene particles are separated, washed, and dried. The graphene oxide includes at least one functional group selected from an epoxy group, a carboxylic group, a carbonyl group, and a hydroxyl group.

    Abstract translation: 目的:提供一种用于制造基于超临界流体的石墨烯片或石墨烯颗粒的方法,通过在超临界流体条件下相对于氧化石墨烯实现脱氧,大量生产高质量的石墨烯片或石墨烯颗粒。 构成:用于制造基于超临界流体的石墨烯片或石墨烯颗粒的方法包括以下:将氧化石墨烯分散在醇溶剂中以形成氧化石墨烯分散溶液; 在超临界条件下还原氧化石墨烯分散溶液以形成石墨烯片或石墨烯颗粒; 石墨烯片或石墨烯颗粒被分离,洗涤和干燥。 氧化石墨烯包括至少一种选自环氧基,羧基,羰基和羟基的官能团。

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