비휘발성 상변화 메모리 재료의 특성 평가 방법
    22.
    发明公开
    비휘발성 상변화 메모리 재료의 특성 평가 방법 失效
    非易失性相变材料性能评价方法

    公开(公告)号:KR1020040071524A

    公开(公告)日:2004-08-12

    申请号:KR1020030007541

    申请日:2003-02-06

    Abstract: PURPOSE: A method for evaluating properties of a nonvolatile phase change memory material is provided to apply a pulse-type electric energy, and to measure phase change properties of a memory material by using an energy applying unit and a synchronized optical unit in real time, thereby improving the phase change properties. CONSTITUTION: A continuous laser beam(36) is focused/incident through a laser light source having a specific wavelength within a range of visible light. The continuous laser beam(36) detects intensity changes of a light(37) reflected from memory areas(33a,33b) or a transmitted light(38) in real time. An optical pulse is used for heating purpose instead of an electric pulse. The electric pulse is used to detect signals in real time.

    Abstract translation: 目的:提供一种用于评估非易失性相变存储材料的性能的方法以施加脉冲型电能,并且通过使用能量施加单元和同步光学单元实时测量存储材料的相变特性, 从而改善相变性。 构成:连续的激光束(36)通过具有在可见光范围内的特定波长的激光光源聚焦/入射。 连续激光束(36)实时地检测从存储区域(33a,33b)或透射光(38)反射的光(37)的强度变化。 光脉冲用于加热而不是电脉冲。 电脉冲用于实时检测信号。

    파장선택형 다층 구조의 투명 도전막
    23.
    发明公开
    파장선택형 다층 구조의 투명 도전막 失效
    多层结构透明导电膜

    公开(公告)号:KR1020020088488A

    公开(公告)日:2002-11-29

    申请号:KR1020010026976

    申请日:2001-05-17

    Abstract: PURPOSE: Provided is a multi-layer structured transparent conductive film excellent in light permeability and conductivity, which can be used as a transparent electrode of a flat-plate display such as TFT-LCD, PDP, FED, ELD, OELD and can be used for shielding electromagnetic waves. CONSTITUTION: The multi-layer structured transparent conductive film comprises transparent films and metal films formed on a substrate by turns, wherein the transparent film is made of at least one selected from a dielectric material, an oxide material, or a polymer material capable of transmitting light in a visible ray range and the metal film is at least one selected from the group consisting of Ag, Au, Cu, Pd, Pt, Ni, Al, Y, La, Mg, Ca, Li, K, Na, Cr, and etc. and the thickness of the metal film is 5-50nm.

    Abstract translation: 目的:提供透光性和导电性优异的多层结构的透明导电膜,其可以用作TFT-LCD,PDP,FED,ELD,OELD等平板显示器的透明电极,并且可以使用 用于屏蔽电磁波。 构成:多层结构的透明导电膜包括透明膜和在基板上轮流形成的金属膜,其中透明膜由选自介电材料,氧化物材料或能够传输的聚合物材料中的至少一种制成 可见光范围内的光,金属膜为选自Ag,Au,Cu,Pd,Pt,Ni,Al,Y,La,Mg,Ca,Li,K,Na,Cr, 并且金属膜的厚度为5-50nm。

    되쓰기형 광기록매체용 상변화형 광기록재료
    24.
    发明公开
    되쓰기형 광기록매체용 상변화형 광기록재료 失效
    用于REWRITE型光学记录介质的相变型光学记录材料

    公开(公告)号:KR1020020076523A

    公开(公告)日:2002-10-11

    申请号:KR1020010016425

    申请日:2001-03-29

    Abstract: PURPOSE: A phase change type optical recording material for a rewrite type optical recording medium is provided to enable high-speed crystallization corresponding to increases in high-intensity and data transfer rate. CONSTITUTION: A phase change type optical recording material for a rewrite type optical recording medium is composed of a stoichiometric GeSbTe-based alloy and a ternary alloy(ABC) having the same crystal structure as the GeSbTe-based alloy in a composition of (Aa Bb Cc)_x(Ge_a Sb_b Te_c)_1-x, wherein x is an atomic mole fraction, and larger than 0 and smaller than 1; a,b,c represent atomic molar ratio; A is an element belonging to the IV group, B is an element belonging to the V group, C is an element belonging to the VI group.

    Abstract translation: 目的:提供一种用于重写型光学记录介质的相变型光学记录材料,以便能够实现高强度和高数据传输速率的高速结晶。 构成:用于重写型光学记录介质的相变型光学记录材料由化学计量的GeSbTe基合金和具有与GeSbTe基合金相同的晶体结构的三元合金(ABC)组成(Aa Bb Cc)_x(Ge_a Sb_b Te_c)_1-x,其中x是原子摩尔分数,大于0且小于1; a,b,c表示原子摩尔比; A是属于IV组的元素,B是属于V族的元素,C是属于VI族的元素。

    산화아연계 투명도전성 박막 및 그 제조방법
    28.
    发明授权
    산화아연계 투명도전성 박막 및 그 제조방법 有权
    由氧化锌组成的透明导电薄膜及其制造方法

    公开(公告)号:KR100979483B1

    公开(公告)日:2010-09-03

    申请号:KR1020080038154

    申请日:2008-04-24

    Abstract: 본 발명은 자유전하 농도가 낮아도 결정립계 산란에 의한 자유전하 이동도 저하 현상을 개선할 수 있으며, 적정한 자유전하 농도에서도 높은 자유전하 이동도가 유지될 수 있는 산화아연계 투명도전성 박막 및 그 제조방법에 관한 것으로서, 본 발명에 따른 산화아연계 투명도전성 박막은 산화아연에 할로겐족 음이온성 원소와 수소가 도핑되거나 산화아연에 할로겐족 음이온성 원소, 수소 및 3족 양이온성 금속원소가 도핑된 것을 특징으로 하며, 산화아연에 할로겐족 음이온성 원소와 수소가 도핑된 경우, 자유전하 농도가 낮더라도 결정립계 산란에 의한 자유전하 이동도 저하 현상이 최소화되며, 산화아연에 할로겐족 음이온성 원소, 수소 및 3족 양이온성 금속원소를 도핑한 경우, 적정의 자유전하 농도가 담보됨과 함께 높은 자유전하 이동도가 유지된다.
    산화아연, 자유전하농도, 자유전하이동도

    고 분해능 표면 플라즈몬 공진 센서 및 그것을 이용한 센서시스템
    29.
    发明公开
    고 분해능 표면 플라즈몬 공진 센서 및 그것을 이용한 센서시스템 有权
    高分辨率表面等离子体共振传感器和传感器系统

    公开(公告)号:KR1020100060475A

    公开(公告)日:2010-06-07

    申请号:KR1020080119075

    申请日:2008-11-27

    CPC classification number: G01N21/553

    Abstract: PURPOSE: A high resolution surface plasmon resonance sensor and a sensor system using the same are provided to improve response to changes in external environment or local area by increasing the electric field intensity on the surface of metal film. CONSTITUTION: A high resolution surface plasmon resonance sensor comprises a light transmission unit(10) and surface plasmon excitation units(12,14,16). As a signal beam(20) enters the light transmission unit, the light transmission unit forms an evanescent field. The surface plasmon excitation units excite surface plasmon with the evanescent field and induce surface plasmon resonance. A dielectric layer is inserted in the metal layers of the surface plasmon excitation units.

    Abstract translation: 目的:提供高分辨率表面等离子体共振传感器和使用其的传感器系统,以通过增加金属膜表面上的电场强度来改善对外部环境或局部区域变化的响应。 构成:高分辨率表面等离子体共振传感器包括光传输单元(10)和表面等离子体激元单元(12,14,16)。 当信号光束(20)进入光传输单元时,光传输单元形成一个消逝场。 表面等离激元激发单元用ev逝场激发表面等离子体并诱导表面等离子体共振。 介电层插入表面等离子体激元单元的金属层中。

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