Abstract:
Provided are a polymer, its preparation method, an organic bottom antireflective coating layer composition containing the polymer, and an antireflective coating layer to prevent the reflection of a substrate layer below a photoresist layer for forming a hyperfine circuit during the exposure process using a deep UV of 250 nm or less in the photolithography of a highly integrated semiconductor prepared from the composition. The polymer is represented by the formula 1, wherein R is a benzoin ether, acetophenone or anthracene derivative of an aromatic carbonyl; R1 is H, a C1-C6 alkyl group, a C1-C6 alkoxyalkyl group or a C1-C6 hydroxyalkyl group; R2 is a protected maleimide or furyl group; X is H, a carboxyl group, a hydroxyl group, a furoyl group or a cyanato group; Y is a C1-C6 alkyl group or a phenyl group; x is 0.1-0.5; y is 0-0.6; z is 0-0.3; p is 0.01-0.3; x+y+z+p = 1; and q is an integer of 1-6. Preferably the polymer has a weight average molecular weight of 10,000-100,000.
Abstract translation:提供聚合物,其制备方法,含有该聚合物的有机底部抗反射涂层组合物和防反射涂层,以防止在使用深紫外线的曝光过程中形成超精细电路的光致抗蚀剂层下方的基底层反射 在由组合物制备的高度集成的半导体的光刻中为250nm以下。 聚合物由式1表示,其中R是芳族羰基的苯偶姻醚,苯乙酮或蒽衍生物; R1是H,C1-C6烷基,C1-C6烷氧基烷基或C1-C6羟烷基; R2是受保护的马来酰亚胺或呋喃基; X是H,羧基,羟基,糠酰基或氰基; Y是C1-C6烷基或苯基; x为0.1-0.5; y为0-0.6; z为0-0.3; p为0.01-0.3; x + y + z + p = 1; q为1-6的整数。 优选地,聚合物的重均分子量为10,000-100,000。
Abstract:
PURPOSE: An N-hydroxyphenylmaleimide-containing polymer, an antireflection film composition containing the polymer, an organic antireflection film containing the polymer and its preparation, and a semiconductor device prepared by using the composition are provided, to inhibit the diffused reflection of the exposed light during the processing of micro pattern and the generation of standing wave, thereby improving the production yield of a semiconductor having a super high resolution of 70-120 nm. CONSTITUTION: The N-hydroxyphenylmaleimide-containing polymer is represented by the formula 1, wherein R is H, tetrahydropyranyl, -COOR3, (SiR4)3 or t-butyl group; R3 and R4 are methyl, t-butyl or an alkyl group of C2-C3, respectively; R1 and R2 which are independently each other represent H, an alkyl group of C1-C6, an alkoxyalkyl group of C1-C6, a hydroxyalkyl group of C1-C6 or a halogenated alkyl group of C1-C6; and the mole fraction, x is 0.1-0.7, y is 0-0.8, z is 0-0.55 and p is 0-0.5 based on the total mol of x+y+z+p.
Abstract translation:目的:提供含有N-羟基苯基马来酰亚胺的聚合物,含有聚合物的防反射膜组合物,含有该聚合物的有机抗反射膜及其制备方法以及使用该组合物制备的半导体装置,以抑制曝光的扩散反射 在微图案的处理和驻波的产生中,由此提高70〜120nm的超高分辨率的半导体的制造成品率。 构成:含有N-羟基苯基马来酰亚胺的聚合物由式1表示,其中R为H,四氢吡喃基,-COOR 3,(SiR 4)3或叔丁基; R3和R4分别是甲基,叔丁基或C2-C3的烷基; R 1和R 2彼此独立地表示H,C 1 -C 6烷基,C 1 -C 6烷氧基烷基,C 1 -C 6羟基烷基或C 1 -C 6卤代烷基; 摩尔分数x为0.1-0.7,y为0-0.8,z为0-0.55,p为0-0.5,基于x + y + z + p的总摩尔数。
Abstract:
NP-톨루엔술폰일옥시말레이미드(TsOMI), N-메탄술폰일옥시말레이미드(MsOMI), N-트리플로로메탄술폰일옥시말레이미드(TfOMI) 중에서 선택한 광산 발생형 단량체 X-OMI와 Nt-부틸옥시카보닐말레이미드(t-BOCMI), 말레이미드(MI), N-히드록시말레이미드(HOMI) 중에서 선택한 말레이미드 단량체 Y-MI와 스티렌(St), 히드록시스티렌(HOSt), t-부틸옥시카보닐옥시스티렌(t-BOCSt) 중에서 선택한 스티렌 유도체(Z-St)를 라디칼공중합시켜 X-OMI:Y-MI:Z-St=0.7∼1.5:0.7∼1.5:1.5∼2.5 (몰%)의 조성을 가진 N-치환된 술폰일옥시말레이미드 단량체를 이용한 삼원공중합체 P(X-OMI/Y-MI/Z-St)의 제조방법 및 이를 이용한 내열성 레지스트 화상형성방법.
Abstract:
The present invention relates a new photo initiator compound and a sensitive polymer composition having the new photo initiator compound which a benzoin alkyl ether is combined with an epoxy phlepolymer or acryl acid ester phlepolymer. The photo initiator compound according to the present invention has a good storing stability. The photo initiator compound may be easily reacted with other components of a photo hardening composition to thereby improve a photo reactive performance. The photo initiator compound improves mechanical features of the photo hardening composition. The photo initiator compound may solve problems such as a poisonous feature, a bad smell, and a color breakdown.
Abstract:
NP-톨루엔술폰일옥시말레이미드(TsOMI), N-메탄술론일옥시말레이미드(MsOMI), N-트리플로로메탄술폰일옥시말레이미드(TfOMI) 중에서 선택한 광산 발생형 단량체 X-OMI와 Nt-부틸옥시카보닐말레이미드(t-BOCMI), 말레이미드(MI), N-히드록시말레이미드(HOMI) 중에서 선택한 말레이미드 단량체 Y-MI와 스티렌(St), 히드록시스티렌(HOSt), t-부틸옥시카보닐옥시스티렌(t-BOCSt) 중에서 선택한 스티렌 유도체(Z-St)를 라디칼공중합시켜 X-OMI : Y-MI : Z-St = 0.7∼1.5 : 0.7∼1.5 : 1.5∼2.5 (몰%)의 조성을 가진 N-치환된 술폰일옥시말레이미드 단량체를 이용한 삼원공중합체P(X0OMI/Y-MI/Z∼St)의 제조방법 및 이를 이용한 내열성 레지스트 화상형성방법.
Abstract:
본 발명은 벤조인알킬에테르가 에폭시 프레폴리머 또는 아크릴산 에스테르 프레폴리머에 화학적으로 결합된 신규의 광개시제 화합물 및 이를 함유하는 광경화 조성물에 관한 것이다. 본 발명에 따른 광개시제 화합물은 저장 안정성이 뛰어나고, 광경화 조성물 중의 다른 성분들과의 상용성이 우수하여 광반응 효율을 향상시킬 수 있으며, 또한, 광경화된 조성물의 기계적 성질을 향상시킬 뿐만 아니라, 독성, 악취, 탈색 등의 문제도 해결할 수 있다.
Abstract:
PURPOSE: A biomedical implant, use thereof, and a preparation method thereof are provided to suppress inflammation due to the decomposition of biodegradable polymers. CONSTITUTION: A biomedical implant includes basic ceramic particles of which surface is reformed with first biodegradable polymers and second biodegradable polymers which are combined with the first biodegradable polymers and form a stereo complex. The basic ceramic particles neutralize acid materials during the decomposition of polymers and have biocompatibility. The polymers are selected from first biodegradable polymers, second biodegradable polymers, and their combination. A ceramic composite forms a coating layer on the surface of the biomedical implant.
Abstract:
PURPOSE: A method for reforming the surface of a stent is provided to flatten the surface of a stent coated with biodegradable polymers. CONSTITUTION: A method for reforming the surface of a stent includes the following steps: a coating layer is formed by ultrasonic wave-spraying the mixture of a first biodegradable polymer and chemicals to the surface of a stent; the stent with the coating layer is contacted with a solvent; and the solvent is evaporated at a temperature between 20 and 80 deg C. The stent is made of a metal selected from a group including stainless steel, cobalt-chromium, platinum-chromium, tantalum, titanium, nitinol, gold, platinum, silver, and the alloy of the same. The biodegradable polymer is selected from a group including poly(glycolic acid), poly-L-lactic acid, poly-D-lactic acid, poly-D,L-lactic acid, poly-e-caprolactone, poly lactic acid-glycolic acid copolymer, poly-L-lactic acid-e-caprolactone copolymer, poly(ethylene glycol), poly(amino acid), polyanhydride, poly ortho ester, polydioxanone, polyphosphazene, cellulose acetate butylate, cellulose triacetate, and the copolymer of the same.
Abstract:
본 발명은 250 nm 이하의 단파장의 원자외선을 이용한 고집적 반도체의 광미세 회로 가공기술(photolithography)에서의 노광 시에 포토레지스트 층 밑의 기질 층에서 일어나는 반사를 방지함으로써 포토레지스트 미세 화상에 발생하는 정재파(standing wave) 효과를 제거할 수 있으며, 가교 결합 기능을 갖는, 아래의 화학식 1로 표시되는 바닥 반사 방지막(bottom antireflective coating layer) 재료용 유기 고분자, 이를 이용한 바닥 반사 방지막 제조용 조성물 및 이들의 제조방법에 관한 것이다. [화학식 1]
Abstract:
PURPOSE: Provided are an alpha-aminoanthracene derivative useful as a precursor of material for forming fine fluorescent image, a copolymer thereof applied to material for recording and a sensor, and a method for forming the fine fluorescent image by using the copolymer. CONSTITUTION: The alpha-aminoanthracene derivative is represented by the formula 1 and the copolymer represented by the formula 2 is produced by radical polymerizing the alpha-aminoanthracene derivative and comonomers selected from the group consisting of styrene, maleimide, and methacrylate in the presence of a polymerization initiator. And the method for forming the fine fluorescent image comprises the steps of: dissolving the copolymer containing the alpha-aminoanthracene derivative, a photoacid generator, an organic acid, and an inorganic acid in an organic solvent; spreading the solution on a substrate and drying to form a thin film; prebaking the thin film coated substrate; exposing by photomask; post-exposure baking. In the formula, R1 is alkyl or phenyl, R2 is O or NH, R3 is vinyl, acryl, allyl, alpha-methylvinyl or 4-vinylphenyl, m is an integer of 0-20, R4 is hydrogen or methyl, R5 is methyloxycarbonyl or phenyl, x and y are an integer of 10-5000.