公开(公告)号：KR1020120124559A

公开(公告)日：2012-11-14

申请号：KR1020110042265

申请日：2011-05-04

Applicant: 한국과학기술원

Inventor： 조규성 ,  이채훈 ,  설우석 ,  김형택 ,  김찬규

IPC: H01L31/06 ,  H01L31/10

CPC classification number: Y02E10/50 ,  H01L31/06 ,  H01L31/10

Abstract: PURPOSE: A method for forming a trench guard ring of a silicon photomultiplier and the silicon photomultiplier are provided to prevent a dark count phenomenon by suppressing the current leakage between avalanche photodiodes. CONSTITUTION: A P-type epitaxial layer(120) is formed on a silicon substrate(110). A respective P-type conductive layer(130) is formed on the P-type epitaxial layer. An oxide film is formed on the P-type epitaxial layer. A silicon nitride film is formed on the oxide film. A photoresist is spread on the silicon nitride film.

Abstract translation: 目的：提供一种形成硅光电倍增管的沟槽保护环的方法和硅光电倍增管，以通过抑制雪崩光电二极管之间的电流泄漏来防止暗计数现象。 构成：在硅衬底（110）上形成P型外延层（120）。 在P型外延层上形成相应的P型导电层（130）。 在P型外延层上形成氧化膜。 在氧化膜上形成氮化硅膜。 光致抗蚀剂铺展在氮化硅膜上。

公开(公告)号：KR1020110131008A

公开(公告)日：2011-12-06

申请号：KR1020100050607

申请日：2010-05-28

Applicant: 한국과학기술원

Inventor： 조규성 ,  이채훈 ,  김형택 ,  김찬규

IPC: H01L31/101

CPC classification number: H01L31/10 ,  H01L31/047 ,  H01L31/06 ,  H01L31/18

Abstract: PURPOSE: A silicon photomultiplier with a backward light-receiving structure, a manufacturing method thereof, and a radiation detector using the same are provided to enhance the light detection efficiency of a gamma-ray detector by increasing a fill factor by broadening an active area which reacts to incident visible light. CONSTITUTION: A third insulation layer(183) is formed at the upper part of a second insulation layer(182). An MIM(Metal-Insulator-Metal) capacitor(300) is formed in the third insulation layer. A second line electrode pattern(420) is formed at the upper part of the third insulation layer. The second line electrode pattern interlinks a quenching resistance(200) and the MIM capacitor which are formed in the upper part of a first insulation layer(181). The MIM capacitor absorbs a surplus voltage when avalanche breakdown occurs.

Abstract translation: 目的：提供具有反向光接收结构的硅光电倍增管及其制造方法和使用该光电倍增管的辐射检测器，以通过扩大有效面积来增加填充因子来增强伽马射线检测器的光检测效率， 对入射的可见光进行反应。 构成：在第二绝缘层（182）的上部形成第三绝缘层（183）。 在第三绝缘层中形成MIM（金属 - 绝缘体 - 金属）电容器（300）。 第二线电极图案（420）形成在第三绝缘层的上部。 第二线电极图形与在第一绝缘层（181）的上部形成的淬火电阻（200）和MIM电容器相互连接。 当发生雪崩击穿时，MIM电容吸收剩余电压。

公开(公告)号：KR1020090129123A

公开(公告)日：2009-12-16

申请号：KR1020080055226

申请日：2008-06-12

Applicant: 한국과학기술원

Inventor： 조규성 ,  이채훈 ,  김진규 ,  김형택

IPC: H01L31/09

CPC classification number: H01L31/085 ,  H01L31/0543 ,  H01L31/0547 ,  H01L31/06

Abstract: PURPOSE: A silicon photomultiplier with improved photo-detecting efficiency and gamma radiation detector comprising the same are provided to minimize light on a dead region of a visible light generated from a scintillator by multi layer polysilicon resistance. CONSTITUTION: In a device, a metal line(310) is formed in each micro cell(320). A polysilicon resistor(340) for quenching is connected to the metal line. A p+ conductive type is formed in the lowermost layer of the semiconductor substrate. The epitaxial layer of the p- conductive type is formed on the semiconductor substrate of the p+ conductive type. A p-region of the conductive type is doped in the epitaxial layer. The n+ domain of the conductive type is formed on the p region of the conductive type. An insulating layer is formed on the n+ domain of the conductive type and epitaxial layer.

Abstract translation: 目的：提供具有改进的光检测效率的硅光电倍增管和包含该光电探测效率的伽马辐射检测器，以通过多层多晶硅电阻使闪烁体产生的可见光的死区的光最小化。 构成：在器件中，在每个微电池（320）中形成金属线（310）。 用于淬火的多晶硅电阻器（340）连接到金属线。 在半导体衬底的最下层形成p +导电型。 p导电型的外延层形成在p +导电型的半导体衬底上。 导电类型的p区被掺杂在外延层中。 导电类型的n +区形成在导电类型的p区上。 在导电型和外延层的n +畴上形成绝缘层。