公开(公告)号：KR1020100116498A

公开(公告)日：2010-11-01

申请号：KR1020090035249

申请日：2009-04-22

Applicant: 한국화학연구원

Inventor： 이미혜 ,  가재원 ,  김진수 ,  안택

IPC: C07C323/29 ,  C07C323/16 ,  C07C39/14 ,  C07C319/14

Abstract: PURPOSE: A fabrication method of a triphenylene-based reactive mesogen is provided to mass-produce triphenylene based a discotic liquid crystalline compound for a liquid temperature range adjustment. CONSTITUTION: A fabrication method of triphenylene-based reactive mesogen marked with chemical formula 1 comprises a step of reacting a compound marked with chemical formula 2 and a compound marked with chemical formula 3. In the chemical formulas, A is either -OH or -NH2. R is H or a functional group of compounds marked with chemical formula 1-a~1-c.

Abstract translation: 目的：提供一种三亚苯基反应性介晶的制造方法，用于大量生产用于液体温度范围调节的盘形液晶化合物的三亚苯。 构成：用化学式1标记的三亚苯基反应性液晶的制造方法包括使化学式2标记的化合物与化学式3标记的化合物反应的步骤。在化学式中，A是-OH或-NH 2 。 R为H或化学式1-a〜1-c所示化合物的官能团。

公开(公告)号：KR1020100049999A

公开(公告)日：2010-05-13

申请号：KR1020080109072

申请日：2008-11-04

Applicant: 한국화학연구원

Inventor： 안택 ,  이미혜 ,  김지영

IPC: C08G73/10 ,  C08G61/12 ,  H01L29/786

CPC classification number: C08L79/085 ,  C08G73/1007 ,  C08G73/101 ,  C08G73/1039 ,  C08G73/1067 ,  C08G73/1075 ,  C08G73/1078 ,  C08G73/12 ,  H01B3/306 ,  H01L51/052 ,  H01L51/0545

Abstract: PURPOSE: An organic gate insulator and an organic thin film transistor device using thereof are provided to form an organic insulating layer using a polyimide polymer, and to reduce a leakage current of the insulator through a photo-curing. CONSTITUTION: An organic gate insulator for an organic thin film transistor device contains a polyimide polymer. The producing method of the polyimide polymer comprises a step of reacting polyimide including a hydroxy group with acryloyl-based halide. The organic thin film transistor device comprises a gate electrode, an organic insulating film, an organic semiconductor layer, a source electrode and a drain electrode on a glass or a plastic substrate. The organic insulating film is formed by spraying a coating solution including the polyimide polymer to the substrate including the gate electrode, and photo-curing.

Abstract translation: 目的：使用有机栅极绝缘体和使用其的有机薄膜晶体管器件来形成使用聚酰亚胺聚合物的有机绝缘层，并且通过光固化来减少绝缘体的漏电流。 构成：有机薄膜晶体管器件的有机栅极绝缘体含有聚酰亚胺聚合物。 聚酰亚胺聚合物的制造方法包括将含有羟基的聚酰亚胺与丙烯酰基卤化物反应的工序。 有机薄膜晶体管器件包括在玻璃或塑料衬底上的栅电极，有机绝缘膜，有机半导体层，源电极和漏电极。 有机绝缘膜是通过将包含聚酰亚胺聚合物的涂布溶液喷涂到包括栅极的基板和光固化而形成的。

公开(公告)号：KR1020100024633A

公开(公告)日：2010-03-08

申请号：KR1020080083292

申请日：2008-08-26

Applicant: 한국화학연구원

Inventor： 이미혜 ,  김진수 ,  안택

IPC: C09K19/56 ,  G02F1/1337

Abstract: PURPOSE: A photoalignment film is provided to ensure excellent optical permeability, heat resistance, mechanical properties, photoalignment properties, a high pretilt angle, and an excellent voltage holding ratio. CONSTITUTION: A photoalignment film is obtained by irradiating polarized ultraviolet rays to a polyamic acid resin represented by chemical formula 1. The polyamic acid resin is prepared using aromatic diamine containing an imide side chain as a monomer. The polyamic acid resin is soluble with dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, tetrahydrofuran, chloroform, acetone, ethylacetate, or gamma-butyrolactone.

Abstract translation: 目的：提供光电对准膜，以确保优异的透光性，耐热性，机械性能，光取向性能，高预倾角和优异的电压保持率。 构成：通过将偏光紫外线照射到由化学式1表示的聚酰胺酸树脂中获得光取向膜。使用含有酰亚胺侧链的芳族二胺作为单体制备聚酰胺酸树脂。 聚酰胺酸树脂可溶于二甲基乙酰胺，二甲基甲酰胺，N-甲基-2-吡咯烷酮，四氢呋喃，氯仿，丙酮，乙酸乙酯或γ-丁内酯。

公开(公告)号：KR1020090071833A

公开(公告)日：2009-07-02

申请号：KR1020070139751

申请日：2007-12-28

Applicant: 한국화학연구원

Inventor： 안택 ,  이미혜 ,  석혜정

IPC: C08L61/02 ,  C08L75/04 ,  C08L29/04 ,  H01L29/786

CPC classification number: C08L61/02 ,  C08K5/07 ,  C08L59/00 ,  C09D129/04 ,  H01L51/0512

Abstract: A composition for preparing an organic passivation layer is provided to ensure excellent coating property, surface roughness, and thin film uniformity in a forming and curing process of an organic passivation layer and to improve a barrier property to moisture and oxygen of the organic passivation layer. A composition for preparing an organic passivation layer comprises a water-soluble polymer having a hydroxyl group and aldehyde selected from dialdehyde or polyaldehyde. The water-soluble polymer is selected from water-soluble polyurethane, polyvinylalcohol, polyvinyl alcohol copolymerization polymer, water soluble acrylate resin, polyethylene glycol or their mixture. The organic thin film transistor comprises a substrate, gate electrode, organic insulating film, organic active layer, source/drain electrode and organic passivation layer.

Abstract translation: 提供了一种用于制备有机钝化层的组合物，以确保在有机钝化层的形成和固化过程中优异的涂覆性能，表面粗糙度和薄膜均匀性，并改善有机钝化层的水分和氧气的阻隔性能。 用于制备有机钝化层的组合物包含具有羟基的水溶性聚合物和选自二醛或多醛的醛。 水溶性聚合物选自水溶性聚氨酯，聚乙烯醇，聚乙烯醇共聚合物，水溶性丙烯酸酯树脂，聚乙二醇或其混合物。 有机薄膜晶体管包括衬底，栅电极，有机绝缘膜，有机有源层，源/漏电极和有机钝化层。

公开(公告)号：KR100902159B1

公开(公告)日：2009-06-10

申请号：KR1020070057623

申请日：2007-06-13

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  양윤철

IPC: C08G73/10 ,  C08J5/22 ,  G02F1/1337

CPC classification number: C08G73/10 ,  C08G73/1039 ,  C08G73/1064 ,  C08G73/1078 ,  C09D179/08 ,  G02F1/133723 ,  G02F1/133788

Abstract: 본 발명은 지방족 고리계 고경도저온공정형 가용성 폴리이미드 광배향막의 제조방법에 관한 것으로서, 보다 상세하게는 지방족 고리계 산이무수물을 적정 비율 이상 포함하는 산이무수물과 방향족 디아민을 적정비율 이상 포함하는 방향족 디아민류를 용액 중합함으로써 제조된 신규한 가용성폴리이미드 광배향막 및 그의 제조방법에 관한 것으로서 해당 조성물은 저온공정성, 우수한 내열성, 표면경도, 투명성 및 편광자외선에 액정의 배향성을 제공하는 특징을 가지고 있다.
본 발명의 신규 액정배향막용 가용성폴리이미드들로 제조된 박막은 표면 조도가 낮고, 전도성 유리(ITO glass)에 대한 인쇄성이 우수할 뿐만 아니라 내열성 및 투명성이 매우 우수하며, 이들로부터 제작된 액정 셀은 0.1∼1.0° 범위의 낮은 선경사각 및 상온에서 98% 이상의 우수한 전압보유율을 제공하는 특징이 있다.
가용성폴리이미드, 광배향막, 플라스틱기판용, 고경도, 저온공정성, 고내열성, 투명성, 전압보유율, 선경사각

公开(公告)号：KR100878449B1

公开(公告)日：2009-01-19

申请号：KR1020070079440

申请日：2007-08-08

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  최유정

IPC: H01L29/786 ,  H01L21/31

CPC classification number: H01L51/052 ,  H01L51/0529

Abstract: A surface treatment method of organic insulator capable of improving transistor property and organic thin film transistor using the same are provided to improve crystal property of organic semiconductor by using hydrophobic material on organic insulation film. A hydrophobic surface treatment layer is formed by reacting thiol compound on a surface of an organic insulation film. In the organic insulation film, unsaturated bonding is generated on the surface. The organic insulation film is made of polyimide or polyimide copolymer having the unsaturated bonding and mass average molecular weight of 5000~1000000. A reaction of the thiol compound and the organic insulation thin film surface is generated by contacting an organic insulator surface on group saturated into the thiol compound.

Abstract translation: 提供能够提高晶体管性能的有机绝缘体的表面处理方法和使用其的有机薄膜晶体管，以通过在有机绝缘膜上使用疏水性材料来改善有机半导体的晶体性质。 通过使有机绝缘膜的表面上的硫醇化合物反应形成疏水性表面处理层。 在有机绝缘膜中，表面产生不饱和键。 有机绝缘膜由不饱和键和质均分子量为5000〜1000000的聚酰亚胺或聚酰亚胺共聚物制成。 通过使饱和的饱和的有机绝缘体表面与硫醇化合物接触来产生硫醇化合物和有机绝缘薄膜表面的反应。

公开(公告)号：KR100873997B1

公开(公告)日：2008-12-17

申请号：KR1020070057025

申请日：2007-06-12

Applicant: 한국화학연구원

Inventor： 안택 ,  이미혜 ,  석혜정

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: The method of manufacturing the organic thin film transistor is provided to improve the durability of the organic passivation and the element reliability. The method of manufacturing the organic thin film transistor comprises as follows. A step is for forming the organic passivation at the upper part of the organic layer transistor element. A step is for forming the hydrophobicity self-assembled monolayer on the surface of organic passivation. The organic passivation has -OH and made of water soluble polymer manufactured from monomer more than the first class. The hydrophobicity self-assembled monolayer is made of the compound selected from below chemical formula 1[R-SiX3]. In the equation, R is straight-chain or the branched-chain alkyl group of the C1~C100 which is or not substituted for the fluorine element or X is independently selected from the alkoxy radical of the halogen atom or C1~C5.

Abstract translation: 提供制造有机薄膜晶体管的方法以提高有机钝化的耐久性和元件的可靠性。 有机薄膜晶体管的制造方法如下。 步骤是在有机层晶体管元件的上部形成有机钝化。 一个步骤是在有机钝化物表面上形成疏水性自组装单层。 有机钝化物具有-OH并由由第一类单体制成的水溶性聚合物制成。 疏水性自组装单层由选自下述化学式1 [R-SiX 3]的化合物制成。 在该方程式中，R是直链或C1-C100的支链烷基，其是或不取代氟元素或X独立地选自卤素原子或C1-C5的烷氧基。

公开(公告)号：KR100873992B1

公开(公告)日：2008-12-17

申请号：KR1020070013494

申请日：2007-02-09

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  하선영

IPC: C08L79/08 ,  C08G73/10 ,  H01L29/786

Abstract: A low-temperature soluble polyimide resin blend composition is provided to improve the overall characteristics of an organic thin film transistor, particularly field effect mobility, by using the composition as an interlayer dielectric having reduced surface tension. A polyimide resin blend composition for a gate dielectric film of an organic transistor comprises 1-99 wt% of a soluble polyimide resin represented by the following formula 1, and 1-99 wt% of a soluble polyimide resin represented by the following formula 2. In the formulae, the formula A is at least one tetravalent group essentially including a specific aliphatic cyclic tetravalent group; the formula B is at least one divalent group; l is a natural number of 1-300; the formula C is at least one divalent group essentially including a divalent aromatic group having a pendant alkyl group; and m is a natural number of 1-300.

Abstract translation: 提供低温可溶性聚酰亚胺树脂共混组合物以通过使用该组合物作为具有降低的表面张力的层间电介质来改善有机薄膜晶体管的整体特性，特别是场效应迁移率。 一种用于有机晶体管的栅极电介质膜的聚酰亚胺树脂共混组合物，其包含1-99重量％的由下式1表示的可溶性聚酰亚胺树脂和1-99重量％的由下式2表示的可溶性聚酰亚胺树脂。 在式中，式A是至少一个基本上包括特定脂肪族环状四价基团的四价基团; 式B是至少一个二价基团; l是1-300的自然数; 式C是至少一个基本上包括具有侧链烷基的二价芳族基团的二价基团; m是1-300的自然数。

公开(公告)号：KR1020080074417A

公开(公告)日：2008-08-13

申请号：KR1020070013494

申请日：2007-02-09

Applicant: 한국화학연구원

Inventor： 이미혜 ,  안택 ,  하선영

IPC: C08L79/08 ,  C08G73/10 ,  H01L29/786

CPC classification number: C08L79/08 ,  C08G73/10 ,  H01L51/052

Abstract: A low-temperature soluble polyimide resin blend composition is provided to improve the overall characteristics of an organic thin film transistor, particularly field effect mobility, by using the composition as an interlayer dielectric having reduced surface tension. A polyimide resin blend composition for a gate dielectric film of an organic transistor comprises 1-99 wt% of a soluble polyimide resin represented by the following formula 1, and 1-99 wt% of a soluble polyimide resin represented by the following formula 2. In the formulae, the formula A is at least one tetravalent group essentially including a specific aliphatic cyclic tetravalent group; the formula B is at least one divalent group; l is a natural number of 1-300; the formula C is at least one divalent group essentially including a divalent aromatic group having a pendant alkyl group; and m is a natural number of 1-300.

Abstract translation: 提供低温可溶性聚酰亚胺树脂共混组合物，通过使用组合物作为具有降低的表面张力的层间电介质来改善有机薄膜晶体管的总体特性，特别是场效应迁移率。 用于有机晶体管的栅极电介质膜的聚酰亚胺树脂共混组合物包括1-99wt％的由下式1表示的可溶性聚酰亚胺树脂和1-99wt％由下式2表示的可溶性聚酰亚胺树脂。 式中式A为至少一个基本上包括特定的脂族环四价基团的四价基团; 式B为至少一个二价基团; l是1-300的自然数; 式C为至少一个二价基团，基本上包括具有烷基侧基的二价芳族基团; m是1-300的自然数。

公开(公告)号：KR100666760B1

公开(公告)日：2007-01-09

申请号：KR1020040108881

申请日：2004-12-20

Applicant: 한국화학연구원

Inventor： 표승문 ,  이미혜 ,  이재흥

IPC: H01L29/786 ,  B82Y10/00

Abstract: 본 발명은 게이트 전극을 ITO나 금속으로, 유기 반도체를 활성층(active layer)으로, 유,무기절연층/금속나노입자/유,무기절연층의 메모리 삼중층(memory stack)을 게이트 절연막(gate insulating layer)으로, 일함수가 큰 금속을 소오스와 드레인 전극으로 사용한 비휘발성 메모리 유기 박막 트랜지스터(nonvolatile memory orgnic thin film transistor)에 관한 것으로서, 더욱 상세하게는 유리, 플라스틱, 실리콘 웨이퍼를 기판으로 하고, 상기 기판 위에 상기의 게이트 전극과 그 게이트 전극위에 상기의 메모리 삼중층을 게이트 절연막으로 형성하고, 상기 게이트 절연막 위에 소오스(source)와 드레인(drain) 전극을 형성하고, 상기 소오스와 드레인 전극 위에 유기 활성층을 가지는 비휘발성 메모리 유기 박막 트랜지스터 및 그를 제조하는 방법에 관한 것이다.
유기 박막 트랜지스터, 비휘발성 메모리, 게이트 절연막