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    Fault current detection for solid-state circuit breakers and method of operating solid-state circuit breakers
    22.
    发明授权
    Fault current detection for solid-state circuit breakers and method of operating solid-state circuit breakers 有权

    公开(公告)号：US12148590B2

    公开(公告)日：2024-11-19

    申请号：US17894740

    申请日：2022-08-24

    Applicant: ABB Schweiz AG

    Inventor： Rostan Rodrigues ,  Pietro Cairoli ,  Utkarsh Raheja

    IPC: H01H71/12 ,  H01L29/747 ,  H02H1/00 ,  H02H3/093

    Abstract: Solid-state circuit breakers and method of operating same are provided. A solid-state circuit breaker (SSCB) is configured to generate a first output representative of a current through a current path of the SSCB. An analog fault detection circuit is coupled with first output and is configured to assert a second output in response to the current exceeding a trip current level. At least one analog-to-digital converter (ADC) is configured to generate samples of the first output, where the at least one ADC has a di/dt detection bandwidth that is less than a di/dt detection bandwidth of the analog fault detection circuit. The SSCB is further configured to disable the current path through the SSCB in response to determining, asynchronously, that either the second output is being asserted by the analog fault detection circuit or the samples indicate that the current through the current path exceeds the trip current level.

    Electrical power cable
    24.
    发明授权
    Electrical power cable 有权

    公开(公告)号：US11923643B2

    公开(公告)日：2024-03-05

    申请号：US17380514

    申请日：2021-07-20

    Applicant: ABB Schweiz AG

    Inventor： Darren Tremelling ,  Pietro Cairoli ,  Debrup Das

    IPC: H01R13/713 ,  H02H3/02

    CPC classification number: H01R13/7135 ,  H02H3/021

    Abstract: An electrical power cable is provided with two ends and an elongated length therebetween. The cable includes one or more conductors for conducting electrical power from a power source to an electrical load. One end includes a switch and a relay to provide electrical power to the electrical load and to disconnect an electrical contact from the power conductor.

    GATE DRIVER CIRCUITS WITH INDEPENDENTLY TUNABLE PERFORMANCE CHARACTERISTICS
    25.
    发明公开
    GATE DRIVER CIRCUITS WITH INDEPENDENTLY TUNABLE PERFORMANCE CHARACTERISTICS 审中-公开

    公开(公告)号：US20230188134A1

    公开(公告)日：2023-06-15

    申请号：US17549520

    申请日：2021-12-13

    Applicant: ABB Schweiz AG

    Inventor： Xiaoqing Song ,  Utkarsh Raheja ,  Pietro Cairoli ,  Sayan Acharya

    IPC: H03K17/687 ,  H02H7/22 ,  H02H3/087

    CPC classification number: H03K17/6874 ,  H02H7/22 ,  H02H3/087

    Abstract: A gate driver circuit is provided that includes a turn-on path, a turn-off path, and a fast discharge path. The turn-on path is couplable between a gate of a solid-state switch and a voltage turn-on signal (VGON) from a gate driver, where the turn-on path defines a turn-on time for the solid-state switch. The turn-off path is couplable between the gate and a voltage turn-off signal (VGOFF) from the gate driver, where the turn-off path defines a turn-off time for the solid-state switch. The fast discharge path is selectively couplable in parallel with the turn-off path during a portion of a gate-to-source voltage (VGS) transition for the solid-state switch, where the turn-off path in parallel with the fast discharge path defines a turn-off delay for the solid-state switch and each of the turn-on time, the turn-off time, and the turn-off delay are independently configurable.

    SENSOR-LESS OVERCURRENT FAULT DETECTION USING HIGH ELECTRON MOBILITY TRANSISTORS
    26.
    发明申请
    SENSOR-LESS OVERCURRENT FAULT DETECTION USING HIGH ELECTRON MOBILITY TRANSISTORS 有权

    公开(公告)号：US20230074777A1

    公开(公告)日：2023-03-09

    申请号：US17468831

    申请日：2021-09-08

    Applicant: ABB Schweiz AG

    Inventor： Xiaoqing Song ,  Utkarsh Raheja ,  Pietro Cairoli ,  Jing Xu

    IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  H02M1/08

    Abstract: An overcurrent fault detector using a High Electron Mobility Transistor (HEMT) operated by a gate driver is disclosed. The overcurrent fault detector includes a band-pass filter and a control circuit. The band-pass filter is configured to receive gate-to-source voltage (VGS) signals of the HEMT and filter the VGS signals to generate a band-limited version of the VGS signals. The control circuit is configured to measure a value of the band-limited version of the VGS signals, determine if the value is greater than a threshold value, and generate a fault signal that disables the gate driver and terminates an overcurrent fault condition in response to determining that the value is greater than the threshold value.

    SOFT TURN-OFF FOR MOTOR CONTROLLERS
    27.
    发明申请
    SOFT TURN-OFF FOR MOTOR CONTROLLERS 有权

    公开(公告)号：US20230006567A1

    公开(公告)日：2023-01-05

    申请号：US17363802

    申请日：2021-06-30

    Applicant: ABB Schweiz AG

    Inventor： Utkarsh RAHEJA ,  Eddy Aeloiza ,  Pietro Cairoli

    IPC: H02M5/458 ,  H02H7/08

    Abstract: A bi-directional switch for an inductive machine is described. The bi-directional switch may include a first power semiconductor transistor with a first source, a first drain, and a first gate. The bi-directional switch may further include a second power semiconductor transistor with a second source, a second drain, and a second gate. The bi-directional switch may include the second source connected to the first source. The bi-directional switch may include a soft-starter device including a control circuit configurable to provide a first control signal to the first power semiconductor transistor and a second control signal to the second power semiconductor transistor.

    POWER SEMICONDUCTOR SWITCH CLAMPING CIRCUIT
    28.
    发明申请
    POWER SEMICONDUCTOR SWITCH CLAMPING CIRCUIT 有权

    公开(公告)号：US20220149615A1

    公开(公告)日：2022-05-12

    申请号：US17091630

    申请日：2020-11-06

    Applicant: ABB Schweiz AG

    Inventor： Xiaoqing Song ,  Pietro Cairoli

    IPC: H02H9/04 ,  H01C7/12 ,  H03K17/72 ,  H03K17/08 ,  G05F3/18 ,  H03K17/10

    Abstract: A power semiconductor circuit is provided for clamping the voltage across the circuit when a power semiconductor switch is opened (i.e., turned off). The circuit may include a first surge arrester and a first semiconductor switch coupled in parallel with the power semiconductor switch. The first semiconductor switch is coupled in series with the first surge arrester. A second surge arrester may be coupled to the gate of the first semiconductor switch to control current flow through the first semiconductor switch and the first surge arrester.

    Power switch control
    29.
    发明授权
    Power switch control 有权

    公开(公告)号：US10790819B1

    公开(公告)日：2020-09-29

    申请号：US16801557

    申请日：2020-02-26

    Applicant: ABB Schweiz AG

    Inventor： Yuzhi Zhang ,  Utkarsh Raheja ,  Pietro Cairoli

    IPC: H03K17/08 ,  H03K17/567 ,  H02H3/00 ,  H02H5/00 ,  H03K17/687 ,  H03K17/735

    Abstract: Systems, methods, techniques and apparatuses of power switch control are disclosed. One exemplary embodiment is a power switch comprising a thyristor-based branch including a thyristor device; a FET-based branch coupled in parallel with the thyristor-based branch and including a FET device; and a controller. The controller is structured to turn on the FET device, turn on the thyristor device after turning on the FET device based on a thyristor voltage threshold, and update the thyristor voltage threshold based on a voltage measurement corresponding to the thyristor-based branch measured while the thyristor device is turned on.

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