RUTHENIUM COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS FOR THIN FILM FORMATION
    21.
    发明申请
    RUTHENIUM COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS FOR THIN FILM FORMATION 审中-公开
    稀土化合物,薄膜形成材料,薄膜形成方法

    公开(公告)号:US20160272664A1

    公开(公告)日:2016-09-22

    申请号:US15032230

    申请日:2014-11-07

    Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

    Abstract translation: 公开了可用作化学气相生长中的前体的钌化合物,特别是ALD。 该化合物与反应性气体具有良好的反应性,高蒸气压和低熔点。 该化合物由通式(I)表示,其中R 1,R 2和R 3各自独立地表示具有1至5个碳原子的直链或支链烷基,条件是R 1和R 2的总碳原子数为3 式(I)中,R 1和R 2各自优选为乙基或异丙基。

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