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    ALKOXIDE COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN-FILM
    1.
    发明公开
    ALKOXIDE COMPOUND, THIN-FILM FORMING RAW MATERIAL, AND METHOD OF PRODUCING THIN-FILM 审中-公开

    公开(公告)号：US20230304154A1

    公开(公告)日：2023-09-28

    申请号：US18014371

    申请日：2021-06-25

    Applicant: ADEKA CORPORATION

    Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Ryota FUKUSHIMA

    IPC: C23C16/455 ,  C23C16/18

    CPC classification number: C23C16/45553 ,  C23C16/18

    Abstract: The present invention provides an alkoxide compound represented by the following general formula (1), a thin-film forming raw material containing the compound, and a method of producing a thin-film:





    where R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and “n” represents the valence of the atom represented by M, provided that when M represents a copper atom, R3 and R4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R5 represents a hydrogen atom.

    COMPOUND, THIN-FILM FORMING RAW MATERIAL, THIN-FILM, AND METHOD OF PRODUCING THIN-FILM
    4.
    发明公开
    COMPOUND, THIN-FILM FORMING RAW MATERIAL, THIN-FILM, AND METHOD OF PRODUCING THIN-FILM 审中-公开

    公开(公告)号：US20240318304A1

    公开(公告)日：2024-09-26

    申请号：US18575951

    申请日：2022-06-27

    Applicant: ADEKA CORPORATION

    Inventor： Chiaki MITSUI ,  Masako HATASE

    IPC: C23C16/18

    CPC classification number: C23C16/18

    Abstract: A compound is represented by the following general formula (1), a thin-film forming raw material including the compound, a thin-film, and a method of producing a thin-film:






    wherein R1 to R4 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R5 and R6 each independently represent an alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 5 carbon atoms, L represents a group represented by the general formula (L-1) or (L-2) described herein, and M represents a hafnium atom, a zirconium atom, or a titanium atom, provided that in a case of a compound in which R5 and R6 each represent a methyl group, A represents an alkanediyl group having 2 carbon atoms, and M represents a titanium atom, L represents a group represented by the general formula (L-2).

    METHOD OF PRODUCING THIN-FILM
    5.
    发明公开
    METHOD OF PRODUCING THIN-FILM 审中-公开

    公开(公告)号：US20240018654A1

    公开(公告)日：2024-01-18

    申请号：US18036975

    申请日：2021-11-16

    Applicant: ADEKA CORPORATION

    Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

    IPC: C23C16/455 ,  C23C16/40

    CPC classification number: C23C16/45553 ,  C23C16/405

    Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate:




    wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

    THIN-FILM FORMING RAW MATERIAL, METHOD OF PRODUCING THIN-FILM, THIN-FILM, AND MOLYBDENUM COMPOUND
    7.
    发明申请
    THIN-FILM FORMING RAW MATERIAL, METHOD OF PRODUCING THIN-FILM, THIN-FILM, AND MOLYBDENUM COMPOUND 有权

    公开(公告)号：US20240425975A1

    公开(公告)日：2024-12-26

    申请号：US18695108

    申请日：2022-09-20

    Applicant: ADEKA CORPORATION

    Inventor： Masako HATASE ,  Keisuke TAKEDA ,  Chiaki MITSUI

    IPC: C23C16/18 ,  C07F11/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455

    Abstract: A thin-film forming raw material contains a molybdenum compound represented by the following general formula (1), a method of forming a thin-film through use of the thin-film forming raw material, and a molybdenum compound having a specific structure: where R1 represents an alkyl group having 1 to 5 carbon atoms or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, L1 represents a group represented by the following general formula (L-1) or (L-2), and “n” represents an integer of from 1 to 4, provided that when “n” represents 4, R1 represents a fluorine atom-containing alkyl group having 1 to 5 carbon atoms; where R2 to R12 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, and * represents a bonding site.

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