公开(公告)号：US20240167155A1

公开(公告)日：2024-05-23

申请号：US18282130

申请日：2022-03-09

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Atsushi YAMASHITA ,  Yoshiki OOE

IPC: C23C16/455 ,  C07F7/22 ,  C23C16/40 ,  C23C16/448

CPC classification number: C23C16/45553 ,  C07F7/2284 ,  C23C16/407 ,  C23C16/4485

Abstract: Provided is a tin compound, which is represented by the following general formula (1):






in the formula (1), R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms or an alkylsilyl group having 3 to 12 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and R5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

公开(公告)号：US20180134739A1

公开(公告)日：2018-05-17

申请号：US15861719

申请日：2018-01-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Naoki YAMADA ,  Tsubasa SHIRATORI ,  Akio SAITO ,  Tomoharu YOSHINO

IPC: C07F15/06 ,  C23C16/40 ,  C23C16/18 ,  C07C251/04 ,  C07F15/04 ,  C07F1/08 ,  C07C251/08 ,  C07F7/28

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：US20240337014A1

公开(公告)日：2024-10-10

申请号：US18575963

申请日：2022-06-28

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Keisuke TAKEDA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C07F15/06 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07F15/065 ,  C23C16/4485 ,  C23C16/45553

Abstract: Provided is a cobalt compound represented by the following general formula (1):




where R1 to R7 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2);




where R8 to R10 each independently represent an alkyl group having 1 to 5 carbon atoms, A1 and A2 each independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

公开(公告)号：US20230151041A1

公开(公告)日：2023-05-18

申请号：US17917671

申请日：2021-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Yoshiki OOE ,  Keisuke TAKEDA ,  Ryota FUKUSHIMA ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C01B33/027 ,  C07F7/22 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F15/065 ,  C01B33/027 ,  C07F7/2284 ,  C23C16/18 ,  C23C16/407 ,  C23C16/45553

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material:




where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

公开(公告)号：US20220024953A1

公开(公告)日：2022-01-27

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F7/22 ,  C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US20170211184A1

公开(公告)日：2017-07-27

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Atsushi SAKURAI ,  Tsubasa SHIRATORI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C23C16/455 ,  C23C16/40 ,  C07F5/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

公开(公告)号：US20170050998A1

公开(公告)日：2017-02-23

申请号：US15306807

申请日：2015-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Atsushi SAKURAI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C07F15/06 ,  C23C16/44 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07F15/06 ,  C23C16/18 ,  C23C16/44

Abstract: The cobalt compound of this invention is represented by general formula (I) below. In general formula (I), R1 to R3 independently represent a straight chain or branched alkyl group having 1 to 5 carbon atoms. In addition, the thin film-forming raw material of this invention contains the cobalt compound represented by general formula (I). According to this invention, it is possible to provide a cobalt compound which can be transported in the form of a liquid due to having a low melting point, which can be decomposed at a low temperature and which can be easily vaporized due to having a high vapor pressure; and a thin film-forming raw material that uses this cobalt compound.

Abstract translation: 根据本发明的钴化合物由通式（I）表示。 在通式（I）中，R 1至R 3独立地表示具有1至5个碳原子的直链或支链烷基。 根据本发明的用于形成薄膜的原料含有由通式（I）表示的钴化合物。 本发明可以提供：具有低熔点并因此可以以液态运输并且可以在低温下分解并且还具有高蒸气压并因此容易蒸发的钴化合物; 以及使用钴化合物制备的用于形成薄膜的原料。

公开(公告)号：US20240018654A1

公开(公告)日：2024-01-18

申请号：US18036975

申请日：2021-11-16

Applicant: ADEKA CORPORATION

Inventor： Akihiro NISHIDA ,  Masako HATASE ,  Tomoharu YOSHINO ,  Yoshiki OOE ,  Chiaki MITSUI

IPC: C23C16/455 ,  C23C16/40

CPC classification number: C23C16/45553 ,  C23C16/405

Abstract: Provided is a method of producing a thin-film containing a zirconium atom on a surface of a substrate by an atomic layer deposition method, including: a step 1 of causing a raw material gas obtained by vaporizing a thin-film forming raw material containing a zirconium compound represented by the following general formula (1) to adsorb to the surface of the substrate to form a precursor thin-film; a step 2 of evacuating the raw material gas remaining unreacted; and a step 3 of causing the precursor thin-film to react with a reactive gas at a temperature of 240° C. or more and 450° C. or less to form the thin-film containing a zirconium atom on the surface of the substrate:




wherein R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and R3 and R4 each independently represent an alkyl group having 1 to 3 carbon atoms, provided that a zirconium compound in which both of R1 and R2 represent hydrogen atoms is excluded.

公开(公告)号：US20220017554A1

公开(公告)日：2022-01-20

申请号：US17490227

申请日：2021-09-30

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Nana OKADA ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/06 ,  C23C16/455

Abstract: A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. (in the formula, R1 represents a linear or branched alkyl group having 1 to 5 carbon atoms, R2 represents hydrogen or a linear or branched alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents an alkanediyl group having 1 to 4 carbon atoms and M represents copper, iron, nickel, cobalt or manganese.)

公开(公告)号：US20190185994A1

公开(公告)日：2019-06-20

申请号：US16326973

申请日：2017-07-05

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Masaki ENZU ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C07F15/04 ,  C07F13/00 ,  C23C16/455

CPC classification number: C23C16/18 ,  C07C251/08 ,  C07F13/005 ,  C07F15/04 ,  C07F15/045 ,  C23C16/45553

Abstract: A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.