Abstract:
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following formula (1): where R1 and R2 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, L represents a group represented by the following formula (L-1) or (L-2), and M represents an indium atom or a gallium atom; where R11 and R12 each independently represent a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1); where R21 to R23 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 5 carbon atoms, and * represents a bonding position with M in the formula (1), provided that R21 and R22 represent different groups.
Abstract:
Provided is an indium compound, which is represented by the following general formula (1):
where R1 and R2 each independently represent, for example, an unsubstituted alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent, for example, a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, and A represents a group represented by the following general formula (L-1) or (L-2):
where R11, R12, R13, R14, R21 and R22 each independently represent, for example, a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, and represents a bonding position with C in the general formula (1).
Abstract:
A diazadienyl compound represented by General Formula (I) below: wherein R1 represents a C1-6 linear or branched alkyl group, and M represents nickel atom or manganese atom. In particular, since a compound in which R1 in General Formula (I) is a methyl group has a high vapor pressure and a high thermal decomposition starting temperature, the compound is useful as a raw material for forming a thin film by a CVD method or ALD method.
Abstract:
A diazadienyl compound represented by General Formula (I) below: wherein R1 and R2 each independently represent a C1-6 linear or branched alkyl group, R3 represents hydrogen, or a C1-6 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents a valence of the metal atom or silicon atom represented by M.
Abstract:
This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.
Abstract:
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a ruthenium compound represented by the following general formula (1): wherein R1 represents a hydrogen atom or a methyl group, and R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.
Abstract:
Provided is a reactive material, including a compound represented by the following general formula (1) or (2).
In the formula (1), R1, R2, R3, and R4 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 4 carbon atoms, or an electron-withdrawing group, provided that at least one of R1, R2, R3, or R4 represents the electron-withdrawing group.
In the formula (2), R5 and R6 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 4 carbon atoms, or an electron-withdrawing group, provided that at least one of R5 or R6 represents the electron-withdrawing group.
Abstract:
Provided is a zinc compound represented by the following general formula (1) or (2):
in the formula (1), R1 represents an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., R2 and R5 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R3 and R4 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.;
in the formula (2), R10, R11, R14, and R15 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc., and R9, R12, R13, and R16 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, etc.
Abstract:
Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a magnesium compound represented by the following general formula (1): where R1 represents an isopropyl group, a sec-butyl group, or a tert-butyl group. A thin-film containing a magnesium atom is produced on a surface of a substrate with high productivity through use of the raw material.