公开(公告)号：US20180134739A1

公开(公告)日：2018-05-17

申请号：US15861719

申请日：2018-01-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Naoki YAMADA ,  Tsubasa SHIRATORI ,  Akio SAITO ,  Tomoharu YOSHINO

IPC: C07F15/06 ,  C23C16/40 ,  C23C16/18 ,  C07C251/04 ,  C07F15/04 ,  C07F1/08 ,  C07C251/08 ,  C07F7/28

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：US20240167154A1

公开(公告)日：2024-05-23

申请号：US18280559

申请日：2022-02-24

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Yoshiki OOE ,  Keisuke TAKEDA ,  Chiaki MITSUI ,  Atsushi YAMASHITA

IPC: C23C16/455

CPC classification number: C23C16/45553 ,  C23C16/45527

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1):


M(R1)x1[A1-N(R2)(R3)]y1   (1)

in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents an indium atom or a zinc atom, provided that when M represents an indium atom, a compound in which x1 represents 2, y1 represents 1, and R1, R2, and R3 each represent a methyl group is excluded.

公开(公告)号：US20220389570A1

公开(公告)日：2022-12-08

申请号：US17771181

申请日：2020-10-19

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Masaki ENZU ,  Keisuke TAKEDA ,  Ryota FUKUSHIMA ,  Atsushi YAMASHITA

IPC: C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), R1 to R5 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and “n” represents a valence of the metal atom represented by M, provided that at least one of R2, R3, and R4 represents the group containing a fluorine atom.

公开(公告)号：US20170129912A1

公开(公告)日：2017-05-11

申请号：US15318755

申请日：2015-07-16

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Masaki ENZU

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C07C251/76 ,  C07F7/10 ,  C07F15/04 ,  C07F7/08

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/081 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525 ,  H01L21/285

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US20170121358A1

公开(公告)日：2017-05-04

申请号：US15303845

申请日：2015-03-30

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Masaki ENZU

IPC: C07F15/06 ,  H01L21/285 ,  C23C16/455 ,  C07C251/08 ,  C23C16/18

CPC classification number: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285 ,  H01L21/28556 ,  H01L21/28568

Abstract: An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

公开(公告)号：US20160272664A1

公开(公告)日：2016-09-22

申请号：US15032230

申请日：2014-11-07

Applicant: ADEKA CORPORATION

Inventor： Masako HATASE ,  Masaki ENZU ,  Atsushi SAKURAI ,  Tomoharu YOSHINO

IPC: C07F15/00 ,  C23C16/455

CPC classification number: C07F15/0046 ,  C07C225/14 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45553

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

Abstract translation: 公开了可用作化学气相生长中的前体的钌化合物，特别是ALD。 该化合物与反应性气体具有良好的反应性，高蒸气压和低熔点。 该化合物由通式（I）表示，其中R 1，R 2和R 3各自独立地表示具有1至5个碳原子的直链或支链烷基，条件是R 1和R 2的总碳原子数为3 式（I）中，R 1和R 2各自优选为乙基或异丙基。

公开(公告)号：US20240352044A1

公开(公告)日：2024-10-24

申请号：US18757905

申请日：2024-06-28

Applicant: ADEKA Corporation

Inventor： Nana OKADA ,  Masako HATASE ,  Akihiro NISHIDA ,  Atsushi SAKURAI

IPC: C07F5/00 ,  C23C16/40 ,  C23C16/455

CPC classification number: C07F5/003 ,  C23C16/405 ,  C23C16/45525

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1), a thin-film-forming raw material containing the same, and a thin film production method of forming a metal-containing thin film using the raw material:

公开(公告)号：US20220024953A1

公开(公告)日：2022-01-27

申请号：US17312637

申请日：2019-12-03

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Tomoharu YOSHINO ,  Akihiro NISHIDA ,  Atsushi YAMASHITA

IPC: C07F7/22 ,  C23C16/18 ,  C23C16/455

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

公开(公告)号：US20200148706A1

公开(公告)日：2020-05-14

申请号：US16609622

申请日：2018-05-28

Applicant: ADEKA CORPORATION

Inventor： Atsushi SAKURAI ,  Masako HATASE ,  Nana OKADA ,  Akihiro NISHIDA

IPC: C07F5/00 ,  C23C16/40 ,  C23C16/455

Abstract: The present invention provides a metal alkoxide compound represented by the following general formula (1): (in the formula, R1 and R2 each independently represent an alkyl group having 1 to 4 carbon atoms, R3 represents an alkyl group having 2 or 3 carbon atoms, M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, a europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom, or a lutetium atom, and n represents the valence represented by M.)

公开(公告)号：US20170211184A1

公开(公告)日：2017-07-27

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu YOSHINO ,  Atsushi SAKURAI ,  Tsubasa SHIRATORI ,  Masako HATASE ,  Hiroyuki UCHIUZOU ,  Akihiro NISHIDA

IPC: C23C16/455 ,  C23C16/40 ,  C07F5/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.