公开(公告)号：US20160307751A1

公开(公告)日：2016-10-20

申请号：US15196985

申请日：2016-06-29

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02167 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.

公开(公告)号：US12272593B2

公开(公告)日：2025-04-08

申请号：US18380981

申请日：2023-10-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  C23C16/04 ,  C23C16/455 ,  H01L21/02

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US12252790B2

公开(公告)日：2025-03-18

申请号：US18367480

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell ,  Viljami Pore

IPC: C23C16/50 ,  C23C16/455 ,  C23C16/513 ,  C23C16/515

Abstract: The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method including providing a substrate having a gap in a reaction chamber, providing a first precursor including silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor includes at least one unsaturated carbon-carbon bond and at least one atom selected from oxygen and nitrogen. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one unsaturated bond is a double bond.

公开(公告)号：US20240352576A1

公开(公告)日：2024-10-24

申请号：US18761445

申请日：2024-07-02

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20240044689A1

公开(公告)日：2024-02-08

申请号：US18361572

申请日：2023-07-28

Applicant: ASM IP Holding, B.V.

Inventor： Giuseppe Alessio Verni ,  Kenneth Honniball ,  Viljami Pore

IPC: G01F23/14 ,  H01L21/67

CPC classification number: G01F23/14 ,  H01L21/67253 ,  H01L21/02205

Abstract: A pressure-based sensor system is described by which the amount of solid precursor in a precursor vessel for a semiconductor manufacturing process can be determined. The system comprises at least two fluidly connected chambers having a known volume, and a pressure sensor configured to measure a plurality of pressures in said chambers.

公开(公告)号：US20230279552A1

公开(公告)日：2023-09-07

申请号：US18172158

申请日：2023-02-21

Applicant: ASM IP Holding, B.V.

Inventor： Viljami Pore

IPC: C23C16/54 ,  C23C16/02 ,  C23C16/56 ,  C23C16/455

CPC classification number: C23C16/54 ,  C23C16/02 ,  C23C16/56 ,  C23C16/45544 ,  H01L21/02271

Abstract: The present disclosure pertains to embodiments of a semiconductor processing system and method for treating a semiconductor wafer. The processing system comprises a reactor, a wafer handling assembly, and treatment unit disposed vertically adjacent to the wafer handling assembly. The system and method minimize a total floor space occupied by the system without sacrificing the processing capacity.

公开(公告)号：US20230212744A1

公开(公告)日：2023-07-06

申请号：US18148568

申请日：2022-12-30

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/762

CPC classification number: C23C16/45542 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods and systems for filling a gap comprised in the substrate with a gap filling fluid. The gap filling fluid is formed in a plasma with a first precursor and a second precursor.

公开(公告)号：US11694892B2

公开(公告)日：2023-07-04

申请号：US17370197

申请日：2021-07-08

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/76224

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US20230207309A1

公开(公告)日：2023-06-29

申请号：US18117729

申请日：2023-03-06

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R.A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/0228 ,  H01J37/32009 ,  H01L21/76224 ,  H01L21/02274 ,  H01L21/02178 ,  H01L21/02299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02219 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/334 ,  H01J2237/3321

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US20230170221A1

公开(公告)日：2023-06-01

申请号：US18056169

申请日：2022-11-16

Applicant: ASM IP Holding, B.V.

Inventor： Charles Dezelah ,  Viljami Pore ,  Varun Sharma

IPC: H01L21/306

CPC classification number: H01L21/30621

Abstract: The current disclosure relates to a method of etching etchable material from a semiconductor substrate is disclosed. Th method comprises providing a substrate comprising the etchable material into a reaction chamber and providing a haloalkylamine into the reaction chamber in vapor phase for etching the etchable material. The disclosure further relates to a semiconductor processing assembly, and to a method of cleaning a reaction chamber.