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    METHOD FOR DEPOSITING A RUTHENIUM-CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS
    21.
    发明申请
    METHOD FOR DEPOSITING A RUTHENIUM-CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS 审中-公开

    公开(公告)号：US20190252195A1

    公开(公告)日：2019-08-15

    申请号：US15896986

    申请日：2018-02-14

    Applicant: ASM IP Holding B.V.

    Inventor： Suvi Haukka

    IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455 ,  H01L29/49

    CPC classification number: H01L21/28556 ,  C23C16/18 ,  C23C16/45553 ,  H01L29/4966

    Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.

    Atomic layer etching processes
    22.
    发明授权
    Atomic layer etching processes 有权

    公开(公告)号：US10283319B2

    公开(公告)日：2019-05-07

    申请号：US15835272

    申请日：2017-12-07

    Applicant: ASM IP Holding B.V.

    Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

    IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00

    Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

    SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS
    26.
    发明申请
    SILANE AND BORANE TREATMENTS FOR TITANIUM CARBIDE FILMS 有权
    用于碳化钛薄膜的硅烷和硼砂处理

    公开(公告)号：US20140273510A1

    公开(公告)日：2014-09-18

    申请号：US13829856

    申请日：2013-03-14

    Applicant: ASM IP HOLDING B.V.

    Inventor： Jerry Chen ,  Vladimir Machkaoutsan ,  Brennan Milligan ,  Jan Willem Maes ,  Suvi Haukka ,  Eric Shero ,  Tom E. Blomberg ,  Dong Li

    IPC: H01L21/02

    CPC classification number: H01L21/28088 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/2807 ,  H01L21/28556 ,  H01L21/28568

    Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.

    Abstract translation: 提供了用含有碳化钛的薄膜与含硅烷/硼烷剂一起处理含金属薄膜的方法。 在一些实施方案中，包含碳化钛的膜通过原子层沉积（ALD）工艺沉积在衬底上。 该方法可以包括多个沉积循环，其涉及包含钛和至少一种卤化物配体的第一源化学品的交替和顺序脉冲，包含金属和碳的第二源化学物质，其中来自第二源化学物质的金属和碳 和第三源化学品，其中第三源化学品是硅烷或硼烷，其至少部分地减少由第一和第二源化学品形成的碳化钛层的氧化部分。 在一些实施方案中，处理在金属碳化物膜上形成覆盖层。

    METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    27.
    发明申请
    METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR 有权
    沉积反应器的处理方法和系统

    公开(公告)号：US20140220247A1

    公开(公告)日：2014-08-07

    申请号：US14166462

    申请日：2014-01-28

    Applicant: ASM IP Holding B.V.

    Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

    IPC: C23C16/44

    CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

    Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

    Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

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