公开(公告)号：US20180314168A1

公开(公告)日：2018-11-01

申请号：US15769339

申请日：2016-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard Johannes Franciscus VAN HAREN ,  Everhardus Cornelis MOS ,  Peter TEN BERGE ,  Peter Hanzen WARDENIER ,  Erik JENSEN ,  Hakki Ergün CEKLI

IPC: G03F7/20 ,  G05B19/418

CPC classification number: G03F7/70625 ,  G03F7/705

Abstract: A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

公开(公告)号：US20180307145A1

公开(公告)日：2018-10-25

申请号：US15951343

申请日：2018-04-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis MOS ,  Jochem Sebastiaan Wildenberg ,  Marcel Hendrikus Maria Beems ,  Erik Johannes Maria Wallerbos

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70891

Abstract: A method of monitoring a device manufacturing process, the method including; obtaining an estimated time variation of a process parameter; determining, on the basis of the estimated time variation, a sampling plan for measurements to be performed on a plurality of substrates to obtain information about the process parameter; measuring substrates in accordance with the sampling plan to obtain a plurality of measurements; and determining an actual time variation of the process parameter on the basis of the measurements.

公开(公告)号：US20180067900A1

公开(公告)日：2018-03-08

申请号：US15558186

申请日：2016-03-25

Applicant: ASML Netherlands B.V.

Inventor： Everhardus Cornelis MOS ,  Velislava IGNATOVA ,  Erik JENSEN ,  Michael KUBIS ,  Hubertus Johannes Gertrudus SIMONS ,  Peter TEN BERGE ,  Erik Johannes Maria WALLERBOS ,  Jochem Sebastiaan WILDENBERG

IPC: G06F17/18 ,  G06F17/50 ,  G03F7/20

CPC classification number: G06F17/18 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7003 ,  G06F17/5009 ,  H01L22/12 ,  H01L22/20

Abstract: A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

公开(公告)号：US20180011398A1

公开(公告)日：2018-01-11

申请号：US15546583

申请日：2016-01-20

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Frank STAALS ,  Christopher PRENTICE ,  Laurent Michel Marcel DEPRE ,  Johannes Marcus Maria BELTMAN ,  Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG ,  Everhardus Cornelis MOS

IPC: G03F1/70 ,  G03F1/22 ,  G06T7/00

Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.

公开(公告)号：US20170293233A1

公开(公告)日：2017-10-12

申请号：US15477602

申请日：2017-04-03

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Richard Johannes Franciscus VAN HAREN ,  Everhardus Cornelis MOS ,  Youping ZHANG

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/28

CPC classification number: G03F7/70633 ,  G03F7/70516 ,  G03F7/70616 ,  G03F7/70683 ,  H01L22/00 ,  H01L22/12 ,  H01L23/544

Abstract: Disclosed is a method of measuring a target, associated substrate comprising a target and computer program. The target comprises overlapping first and second periodic structures. The method comprising illuminating the target with measurement radiation and detecting the resultant scattered radiation. The pitch of the second periodic structure is such, relative to a wavelength of the measurement radiation and its angle of incidence on the target, that there is no propagative non-zeroth diffraction at the second periodic structure resultant from said measurement radiation being initially incident on said second periodic structure. There may be propagative non-zeroth diffraction at the second periodic structure which comprises further diffraction of one or more non-zero diffraction orders resultant from diffraction by the first periodic structure. Alternatively, the detected scattered radiation may comprise non-zero diffraction orders obtained from diffraction at said the periodic structure which have been disturbed in the near field by the second periodic structure.

公开(公告)号：US20170277045A1

公开(公告)日：2017-09-28

申请号：US15528693

申请日：2015-11-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Jasper MENGER ,  Paul Cornelis Hubertus ABEN ,  Everhardus Cornelis MOS

IPC: G03F9/00

CPC classification number: G03F9/7046

Abstract: Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

公开(公告)号：US20160334717A1

公开(公告)日：2016-11-17

申请号：US15111763

申请日：2014-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Jochem Sebastiaan WILDENBERG ,  Everhardus Cornelis MOS

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70775 ,  G01B11/272 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7003 ,  G03F9/7046

Abstract: A method of determining a measurement subset of metrology point locations which includes a subset of potential metrology point locations on a substrate. The method including identifying a plurality of candidate metrology point locations from the potential metrology point locations. A change in the level of informativity imparted by the measurement subset of metrology point locations which is attributable to the inclusion of that candidate metrology point location into the measurement subset of metrology point locations is evaluated for each of the candidate metrology point locations. The candidate metrology point locations which have the greatest increase in the level of informativity attributed thereto are selected for inclusion into the measurement subset of metrology point locations.

Abstract translation: 一种确定测量点位置的测量子集的方法，其包括衬底上的潜在测量点位置的子集。 该方法包括从潜在测量点位置识别多个候选测量点位置。 对于候选计量点位置中的每一个，评估归因于将该候选计量点位置包括在计量点位置的测量子集中的度量点位置的测量子集所赋予的信息水平的变化。 选择归因于其的信息水平增加最大的候选计量点位置以包含在度量点位置的测量子集中。