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    METHOD OF MEASURING ASYMMETRY, INSPECTION APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD
    2.
    发明申请
    METHOD OF MEASURING ASYMMETRY, INSPECTION APPARATUS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD 有权
    测量不对称的方法，检查装置，光刻系统和器件制造方法

    公开(公告)号：US20160180517A1

    公开(公告)日：2016-06-23

    申请号：US14971887

    申请日：2015-12-16

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Andreas FUCHS ,  Peter Hanzen WARDENIER ,  Amandev SINGH ,  Maxime D' ALFONSO ,  Hilko Dirk BOS

    IPC: G06T7/00

    CPC classification number: G06T7/0004 ,  G03F7/70633 ,  G03F7/70941 ,  G06T7/11 ,  G06T2207/30148

    Abstract: A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such as overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and −1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive intensity defects due to stray radiation (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly substrate (process) dependent. Calibration measurements are made on a few representative target gratings having biases. The calibration measurements are made, using not only different substrate rotations but also complementary apertures. Corrections are calculated and applied to correct asymmetry, to reduce error caused by stray radiation.

    Abstract translation: 在暗场成像模式中使用散射仪来测量不对称相关的参数，如覆盖。 使用相同的光路进行小光栅目标的测量，目标在两个取向上以获得+1和-1衍射级的单独测量。 以这种方式，避免了强度缩放差异（工具不对称）。 然而，由于光学系统中的杂散辐射（重影）引起的附加强度缺陷是不能避免的。 添加强度问题很大程度上依赖于第0级和第1级衍射之间的比例，因此依赖于衬底（工艺）。 在具有偏差的几个代表性目标光栅上进行校准测量。 进行校准测量，不仅使用不同的衬底旋转，而且使用互补的孔。 校正被计算并应用于纠正不对称性，以减少由杂散辐射引起的误差。

    Method of Metrology, Inspection Apparatus, Lithographic System and Device Manufacturing Method
    4.
    发明申请
    Method of Metrology, Inspection Apparatus, Lithographic System and Device Manufacturing Method 有权
    计量，检验仪器，平版印刷系统和器件制造方法

    公开(公告)号：US20160370710A1

    公开(公告)日：2016-12-22

    申请号：US15186031

    申请日：2016-06-17

    Applicant: ASML Netherlands B.V.

    Inventor： Peter Hanzen WARDENIER ,  Frank STAALS ,  Jean-Pierre Agnes Henricus Mar VAESSEN ,  Hans VAN DER LAAN

    IPC: G03F7/20 ,  G01B11/03

    CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

    Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

    Abstract translation: 公开了一种在使用定义测量场的测量辐射测量目标之后，确定从包括多个周期性结构的目标衍射的辐射的测量值的校正的方法。 该校正用于校正测量值中的测量场位置依赖性。 该方法包括执行周期性结构的第一和第二测量; 以及从所述第一测量和所述第二测量确定校正。 执行第一测量，其中所述目标相对于测量场处于正常测量位置。 相对于测量场，位移位置中的周期性结构执行第二测量，当所述目标相对于测量场在所述正常测量位置时，所述偏移位置包括另一个所述周期性结构的位置。

    METHOD AND APPARATUS TO CORRECT FOR PATTERNING PROCESS ERROR
    6.
    发明申请
    METHOD AND APPARATUS TO CORRECT FOR PATTERNING PROCESS ERROR 审中-公开

    公开(公告)号：US20180252998A1

    公开(公告)日：2018-09-06

    申请号：US15765489

    申请日：2016-09-27

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Peter TEN BERGE ,  Daan Maurits SLOTBOOM ,  Richard Johannes VAN HAREN ,  Peter Hanzen WARDENIER

    IPC: G03F1/72 ,  G03F1/84

    Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.

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