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公开(公告)号：US20180196357A1
公开(公告)日：2018-07-12
申请号：US15912036
申请日：2018-03-05
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
CPC classification number: G03F7/70633
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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22.发明申请公开(公告)号：US20160223322A1
公开(公告)日：2016-08-04
申请号：US15013340
申请日：2016-02-02
Applicant: ASML Netherlands B.V.
Inventor： Xing Lan LIU , Hendrik Jan Hidde Smilde , Yue-Lin Peng , Hakki Ergün Cekli , Josselin Pello , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/272 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7007
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.
Abstract translation: 公开了一种测量光刻处理参数的方法以及相关联的计算机程序和装置。 该方法包括在衬底上提供多个目标结构，每个靶结构包括在衬底的不同层上的第一结构和第二结构。 用测量辐射测量每个目标结构以获得目标结构中的目标不对称性的测量，所述目标不对称性包括由于第一和第二结构的未对准而产生的覆盖贡献，以及由于至少第一个结构中的结构不对称的结构贡献 结构体。 获得与至少每个目标结构的第一结构中的结构不对称有关的结构不对称特性，结构不对称特性与测量辐射的至少一个所选特征无关。 然后使用目标不对称性和结构不对称特征的测量来确定每个目标结构的目标不对称性的覆盖贡献。
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23.发明授权Substrate and patterning device for use in metrology, metrology method and device manufacturing method 有权用于计量，计量方法和器件制造方法的基板和图案形成装置公开(公告)号：US09331022B2
公开(公告)日：2016-05-03
申请号：US14261879
申请日：2014-04-25
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Patrick Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
IPC: H01L23/58 , G03F9/00 , H01L23/544 , G03F7/20
CPC classification number: G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标，用于测量覆盖。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。
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24.发明申请Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method 有权用于计量，计量方法和器件制造方法的基板和图案化装置公开(公告)号：US20140233031A1
公开(公告)日：2014-08-21
申请号：US14261879
申请日：2014-04-25
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Patric Warnaar , Kaustuve Bhattacharyya , Hendrik Jan Hidde Smilde , Michael Kubis
CPC classification number: G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
Abstract: A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
Abstract translation: 来自图案形成装置的图案通过光刻装置施加到基板。 应用模式包括产品功能和计量目标。 测量目标包括大目标和小目标，用于测量覆盖。 一些较小的目标分布在较大目标之间的位置，而其他小目标则放置在与大目标位置相同的位置。 通过比较在相同位置使用小目标和大目标测量的值，可以校正使用所有小目标测量的参数值以获得更高的精度。 大型目标主要位于划线范围内，而小目标则分布在产品区域内。
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公开(公告)号：US20230016664A1
公开(公告)日：2023-01-19
申请号：US17873406
申请日：2022-07-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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Patent Agency Ranking
26.发明授权公开(公告)号：US11526085B2
公开(公告)日：2022-12-13
申请号：US16988766
申请日：2020-08-10
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Bastiaan Onne Fagginger Auer , Davit Harutyunyan , Patrick Warnaar
Abstract: In a dark-field metrology method using a small target, a characteristic of an image of the target, obtained using a single diffraction order, is determined by fitting a combination fit function to the measured image. The combination fit function includes terms selected to represent aspects of the physical sensor and the target. Some coefficients of the combination fit function are determined based on parameters of the measurement process and/or target. In an embodiment the combination fit function includes jinc functions representing the point spread function of a pupil stop in the imaging system.
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公开(公告)号：US11428521B2
公开(公告)日：2022-08-30
申请号：US17519641
申请日：2021-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US10331041B2
公开(公告)日：2019-06-25
申请号：US16159884
申请日：2018-10-15
Applicant: ASML Netherlands B.V.
Inventor： Scott Anderson Middlebrooks , Niels Geypen , Hendrik Jan Hidde Smilde , Alexander Straaijer , Maurits Van Der Schaar , Markus Gerardus Martinus Maria Van Kraaij
IPC: G03F7/20
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
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公开(公告)号：US09879988B2
公开(公告)日：2018-01-30
申请号：US15013340
申请日：2016-02-02
Applicant: ASML Netherlands B.V.
Inventor： Xing Lan Liu , Hendrik Jan Hidde Smilde , Yue-Lin Peng , Hakki Ergün Cekli , Josselin Pello , Richard Johannes Franciscus Van Haren
CPC classification number: G01B11/272 , G03F7/70616 , G03F7/70625 , G03F7/70633 , G03F9/7007
Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated computer program and apparatuses. The method comprises providing a plurality of target structures on a substrate, each target structure comprising a first structure and a second structure on different layers of the substrate. Each target structure is measured with measurement radiation to obtain a measurement of target asymmetry in the target structure, the target asymmetry comprising an overlay contribution due to misalignment of the first and second structures, and a structural contribution due to structural asymmetry in at least the first structure. A structural asymmetry characteristic relating to the structural asymmetry in at least the first structure of each target structure is obtained, the structural asymmetry characteristic being independent of at least one selected characteristic of the measurement radiation. The measurement of target asymmetry and the structural asymmetry characteristic is then used to determine the overlay contribution of the target asymmetry of each target structure.
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公开(公告)号：US09535342B2
公开(公告)日：2017-01-03
申请号：US14224532
申请日：2014-03-25
Applicant: ASML Netherlands B.V.
Inventor： Hendrik Jan Hidde Smilde , Patrick Warnaar
CPC classification number: G03F9/00 , G03F7/70483 , G03F7/70633
Abstract: Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
Abstract translation: 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅或其他结构小于测量光学系统的照明点和视场。 组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。 可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。 测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。 可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如允许在半导体器件制造过程中更准确地过度测量。
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