公开(公告)号：JP2005031681A

公开(公告)日：2005-02-03

申请号：JP2004202539

申请日：2004-07-09

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF MARIA ,  DUSA MIRCEA ,  VAN HAREN RICHARD JOHANNES FRA ,  COLINA LUIS ALBERTO COLINA SAN ,  HENDRICKX ERIC HENRI JAN ,  VANDENBERGHE GEERT ,  VAN DER HOFF ALEXANDER HENDRIK

IPC: G03F1/08 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a mask pattern for imaging a marker structure which decreases lens aberration and influences of the limitation of projection in a lithographic process. SOLUTION: The mask pattern is formed to image a marker structure on a substrate by lithographic projection. The marker structure is constituted to determine the optical alignment or overlay in use and has a constituent part defining the marker structure. The constituent part is segmented into a plurality of segmented elements (EL; ML), each segmented element having substantially a size of a device feature. In the mask pattern having a segment shape for each segmented element (EL; ML), the mask pattern for the marker structure includes at least one assist feature (EL_sub) located at a critical part of the segment shape for suppressing optical aberration or optical limitation generated in the lithographic projection at the critical part. At least one assist feature (EL_sub) substantially has a size below the resolution of the lithographic projection. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2002329645A

公开(公告)日：2002-11-15

申请号：JP2002100997

申请日：2002-04-03

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF MARIA

IPC: H01L21/027 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a lithography-manufacturing method and a lithography- manufacturing apparatus for improving the abnormality in the line interval of circuit patterns and in the pitch of line width (critical dimensions). SOLUTION: In the lithography-manufacturing method, first information regarding the first lithography transfer function of the first lithography projection apparatus can be obtained. The information is compared with second information regarding the second lithography transfer function of the second lithography projection apparatus as a reference. The difference between the first information and second information is calculated. Then, the change in the mechanical setting of the lithography projector required for minimizing the difference is calculated, and is applied to the first lithography projector, thus improving the matching in the pitch dependency of characteristic errors between the first and second lithography projectors.

公开(公告)号：DE60223102D1

公开(公告)日：2007-12-06

申请号：DE60223102

申请日：2002-03-28

Applicant: ASML NETHERLANDS BV

Inventor： BASELMANS JOHANNES JACOBUS MAT ,  ENGELEN ADRIANUS FRANCISCUS PE ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  FINDERS JOZEF MARIA ,  KOHLER CARSTEN

IPC: G03F7/20 ,  H01L21/027

Abstract: A device manufacturing method is disclosed in which the aberration of the projection system of a lithographic projection apparatus is obtained in terms of the Zernike expansion. The field distribution of displacement error and focal plane distortion of the projected image are calculated on the basis of the Zernike aberration and sensitivity coefficients which quantify the relationship between Zernike aberration components and the error in the image. A calculation is then performed to determine the compensation to apply to the apparatus in order to minimize the error in the image. The compensation is then applied to the apparatus. The compensation may comprise increasing one component of aberration of the apparatus in order to decrease the effect of another aberration, such that, on balance, the image quality as a whole is improved.

公开(公告)号：SG108975A1

公开(公告)日：2005-02-28

申请号：SG200404319

申请日：2004-07-06

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF MARIA ,  DUSA MIRCEA ,  VAN HAREN ,  RICHARD JOHANNES FRANCISCUS ,  COLINA LUIS ALBERTO COLINA SAN ,  HENDRICKX ERIC HENRI JAN ,  VANDENBERGHE GEERT ,  VAN DER HOFF ,  ALEXANDER HENDRIKUS MARTINUS

IPC: G03F1/08 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

公开(公告)号：NL1036905A1

公开(公告)日：2009-12-04

申请号：NL1036905

申请日：2009-04-28

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF MARIA

IPC: G03F7/20

公开(公告)号：SG115657A1

公开(公告)日：2005-10-28

申请号：SG200401879

申请日：2004-04-05

Applicant: ASML NETHERLANDS BV

Inventor： EURLINGS MARKUS FRANCISCUS ANT ,  FINDERS JOZEF MARIA

IPC: G03F7/20 ,  H01L21/027

Abstract: Isolated dark features, e.g. contact holes or lines, are exposed in a double exposure, using for example a box-in-box pattern (Fig.2C and Fig.2D), and using different illumination settings in the two exposures.

公开(公告)号：DE60223102T2

公开(公告)日：2008-08-07

申请号：DE60223102

申请日：2002-03-28

Applicant: ASML NETHERLANDS BV

Inventor： BASELMANS JOHANNES JACOBUS MAT ,  ENGELEN ADRIANUS FRANCISCUS PE ,  CRAMER HUGO AUGUSTINUS JOSEPH ,  FINDERS JOZEF MARIA ,  KOHLER CARSTEN

IPC: G03F7/20 ,  H01L21/027

Abstract: A device manufacturing method is disclosed in which the aberration of the projection system of a lithographic projection apparatus is obtained in terms of the Zernike expansion. The field distribution of displacement error and focal plane distortion of the projected image are calculated on the basis of the Zernike aberration and sensitivity coefficients which quantify the relationship between Zernike aberration components and the error in the image. A calculation is then performed to determine the compensation to apply to the apparatus in order to minimize the error in the image. The compensation is then applied to the apparatus. The compensation may comprise increasing one component of aberration of the apparatus in order to decrease the effect of another aberration, such that, on balance, the image quality as a whole is improved.

公开(公告)号：SG131856A1

公开(公告)日：2007-05-28

申请号：SG2006068167

申请日：2006-09-29

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF MARIA

Abstract: A single exposure method and a double exposure method for reducing mask error factor and for enhancing lithographic printing-process resolution is presented. The invention comprises decomposing a desired pattern of dense lines and spaces in two sub patterns of semi dense spaces that are printed in interlaced position with respect to each other, using positive tone resist. Each of the exposures is executed after applying a relative space-width widening to the spaces of two corresponding mask patterns of semi dense spaces. A factor representative for the space-width widening has a value between 1 and 3, thereby reducing mask error factor and line edge roughness.

公开(公告)号：SG110121A1

公开(公告)日：2005-04-28

申请号：SG200404944

申请日：2004-09-06

Applicant: ASML NETHERLANDS BV

Inventor： FINDERS JOZEF MARIA ,  STOELDRAIJER JUDOCUS MARIE DOM ,  DE KLERK JOHANNES WILHELMUS

IPC: H01L21/027 ,  G03F7/20

Abstract: A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.