Abstract:
PROBLEM TO BE SOLVED: To provide a method for determining parameters for projection of a lithographic projecting apparatus to be used for manufacturing a device, in particular, determining the intensity distribution of a radiation source, optical proximity correction rules and process windows by using simple software. SOLUTION: The method includes processes of: selecting a plurality of features of a pattern to be imaged; notionally dividing radiation into a plurality of radiation source elements; calculating the process window for each selected feature with respect to each radiation source element and determining the optical proximity correction rules that optimize the overlap of the calculated process windows; and selecting the radiation source elements satisfying the specified criteria by the overlap of the process windows and the optical proximity correction rules. The selected radiation source elements generate the intensity distribution of the radiation source. A substrate can be exposed in the process windows by using a patterning means having a pattern corrected in accordance with the determined optical proximity correction rules and by using the radiation source having the intensity distribution of the radiation source. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a device manufacturing method and a mask used for the method that forms an image of an isolated shape, particularly an image of a dark shape against a bright backdrop with an increased depth of focus. SOLUTION: There are provided the device manufacturing method, a mask set used for the method, a data set for controlling a programmable pattern forming apparatus, a method of forming a mask pattern, and a computer program. Isolated dark figures, e.g., contact holes or lines are exposed in a double exposure. Different irradiating settings are used in the double exposure. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To avoid or alleviate the problem caused by a contrast loss, that is induced by radiations reflected first from the dark part of a mask and second from the other absorbing layer in a lithographic apparatus. SOLUTION: A reflective mask has a sub-resolution texture applied to absorbing area to reduce the amount of power in specular reflection. The texture may form a phase contrast grating or may be a diffuser. The same technique may be applied to the other absorbers in the lithographic apparatus. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a lithographic apparatus which applies a desired angular intensity distribution to a radiation beam, and includes compensation for its undesired properties, adjustment of properties of the radiation beam to improve lithography and the like. SOLUTION: The method comprises controlling an array (of mirrors) of individually controllable elements and related optical components of an illumination system to convert the radiation beam into a desired illumination mode, wherein the controlling step includes a step of allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme selected as to provide a desired modification of one or more properties of the illumination mode, or the radiation beam, or both. The method further includes: patterning the radiation beam with a pattern in its cross-section to form a patterned radiation beam; and projecting the patterned radiation beam onto a target portion of a substrate. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lithography device constituted such that a flexible polarization illumination mode is created, and a method of manufacturing the device. SOLUTION: The reflection element 14b of an array 14 reflects a sub beam toward an intermediate surface 16 via a redirect optical system 15. The redirect optical system (for example, a focusing lens) allows the sub beam to face with the determined region of the intermediate surface of an illuminator. A cross section 16 may coincide with a pupil surface functioning as a secondary radiation source. Further, the reaction elements 14c and 14d reflect two other illustrated sub beams toward the other region of the section 16 via the redirect optical system 15. Almost every space intensity distribution in the cross section can be produced by determining the region of the section 16 on which the sub beam is incident by adjusting the alignment of the reflection elements 14a and 14e. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a projector which is used in a lithographic apparatus, etc., and improved so as to form almost all intensity distributions required for a projection beam. SOLUTION: A lithographic projection apparatus has an emission system (32, 33, and 16). Auxiliary beams of an incident projection beam are reflected in directions which can be controlled individually by a plurality of orienting members (33a-33e). All spatial intensity distributions required for the projection beam can be formed in a cross-sectional plane by a re-orienting optical apparatus (16).
Abstract:
An optical attenuator device operates to remove a part of a beam of radiation having a higher than average intensity using at least one optical attenuator element (4). The device has application in a radiation system, and/or a lithographic apparatus, in particular a scanning lithographic apparatus, wherein the optical attenuator element(s) are provided in a central part of the beam, for example perpendicularly to a scanning direction.
Abstract:
A lithographic projection system has an illumination system with a polarization member. A plurality of directing elements reflect different sub- beams of an incident beam into adjustable, individually controllable directions. By means of re-directing optics any desired polarized spatial intensity distribution of the beam can be produced in its cross-sectional plane.
Abstract:
A lithographic projection system has an optical element provided in the illumination system for changing an elliptically symmetric intensity anomaly of the projection beam in a pupil of the projection apparatus, the optical element being rotated about the optical axis of the projection apparatus such that the change in intensity anomaly introduced by it counteracts an elliptically symmetric intensity anomaly present in the projection beam or introduced by another optical element traversed by the projection beam.
Abstract:
A reflective mask has a sub-resolution texture applied to absorbing areas to reduce the amount of power in the specular reflection. The texture may form a phase contrast grating or may be a diffuser. The same technique may be applied to the other absorbers in a lithographic apparatus.