公开(公告)号：US10991854B2

公开(公告)日：2021-04-27

申请号：US16182241

申请日：2018-11-06

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L23/00 ,  H01L33/44 ,  H01L33/62 ,  H01L33/38 ,  H01L33/02 ,  H01L33/40

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US10411162B2

公开(公告)日：2019-09-10

申请号：US15265069

申请日：2016-09-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22 ,  H01L33/00

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

公开(公告)号：US09887320B2

公开(公告)日：2018-02-06

申请号：US15342634

申请日：2016-11-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  De-Shan Kuo ,  Wen-Hung Chuang ,  Tsun-Kai Ko ,  Chia-Chen Tsai ,  Chyi-Yang Sheu ,  Chun-Chang Chen

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/387

Abstract: A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.

公开(公告)号：US09761774B2

公开(公告)日：2017-09-12

申请号：US14948733

申请日：2015-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes: a semiconductor light-emitting stack including a first semiconductor layer with a first conductivity, an active layer, and a second semiconductor layer with a second conductivity; a first conductive layer disposed on the semiconductor light-emitting stack and electrically connecting the second semiconductor layer; a first insulating layer on the first conductive layer; a second conductive layer disposed on the first insulating layer and electrically connecting the first semiconductor layer; a second insulating layer on the second conductive layer; a first pad and a second pad on the second conductive layer; and a cushion part disposed between the first pad and the second pad.

公开(公告)号：US09502615B2

公开(公告)日：2016-11-22

申请号：US14939829

申请日：2015-11-12

Applicant: Epistar Corporation

Inventor： Hsin-Ying Wang ,  De-Shan Kuo ,  Wen-Hung Chuang ,  Tsun-Kai Ko ,  Chia-Chen Tsai ,  Chyi-Yang Sheu ,  Chun-Chang Chen

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC classification number: H01L33/20 ,  H01L33/38 ,  H01L33/387

Abstract: A light-emitting element, includes a substrate; a first light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, and wherein the triangular upper surface has three sides and three vertexes; a first electrode formed on the first light-emitting stack and located near a first side of the three sides of the triangular upper surface; and a second electrode formed on the first light-emitting stack; including a second electrode pad near a first vertex of the three vertexes; and a second electrode extending part extending from the second electrode pad in two directions, disposed along other two sides of the three sides to surround the first electrode and stopping at the first side to form an opening.

Abstract translation: 发光元件包括基板; 形成在基板上的第一发光叠层，包括平行于基板的三角形上表面，并且其中三角形上表面具有三个边和三个顶点; 第一电极，其形成在所述第一发光叠层上并且位于所述三角形上表面的三个边的第一侧附近; 和形成在第一发光叠层上的第二电极; 包括靠近所述三个顶点的第一顶点的第二电极垫; 以及从所述第二电极焊盘沿两个方向延伸的第二电极延伸部分，所述第二电极延伸部分沿着所述三个侧面的另外两个侧面设置以围绕所述第一电极并且在所述第一侧处停止形成开口。

公开(公告)号：US12166156B2

公开(公告)日：2024-12-10

申请号：US18401106

申请日：2023-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/02 ,  H01L33/08 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US12080831B2

公开(公告)日：2024-09-03

申请号：US18212449

申请日：2023-06-21

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC: H01L33/40 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y115/10 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

公开(公告)号：US12002904B2

公开(公告)日：2024-06-04

申请号：US17241958

申请日：2021-04-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L23/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US10361342B2

公开(公告)日：2019-07-23

申请号：US15633264

申请日：2017-06-26

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu ,  Chi-Shiang Hsu ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu

IPC: H01L33/62 ,  H01L33/38 ,  F21V29/77 ,  F21K9/232 ,  F21K9/237 ,  F21V3/02 ,  F21V5/04 ,  F21V23/06 ,  H01L33/40 ,  H01L33/44 ,  F21Y115/10 ,  H01L33/42 ,  H01L33/20

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.

公开(公告)号：US10199544B2

公开(公告)日：2019-02-05

申请号：US15858534

申请日：2017-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Bo-Jiun Hu ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Kuan-Yi Lee ,  Yu-Ling Lin ,  Chien-Fu Shen ,  Tsun-Kai Ko

IPC: H01L33/38 ,  H01L33/46 ,  H01L33/40

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.