PAINT CONDUCTIVITY MEASUREMENT SYSTEM
    21.
    发明申请
    PAINT CONDUCTIVITY MEASUREMENT SYSTEM 审中-公开
    涂料电导率测量系统

    公开(公告)号:WO1991002598A1

    公开(公告)日:1991-03-07

    申请号:PCT/US1990003739

    申请日:1990-07-05

    CPC classification number: B05B5/16 B05B5/1608 B05B12/14

    Abstract: A system and process for metering the delivery of liquids (from reservoirs 14, 16, and 18) to apply the liquids to an object, such as an automobile (10). The conductivity of the liquids is monitored at a metering device, such as a spray gun (50) by means of a conductivity cell (54). Measurement of conductivity at the metering device provides continual measurement for fluctuations in conductivity and is useful for controlling liquid flow during sequential metering of different liquids.

    RADIATION DETECTOR ARRAY USING RADIATION SENSITIVE BRIDGES
    22.
    发明申请
    RADIATION DETECTOR ARRAY USING RADIATION SENSITIVE BRIDGES 审中-公开
    使用辐射敏感桥梁的辐射探测器阵列

    公开(公告)号:WO1990016082A1

    公开(公告)日:1990-12-27

    申请号:PCT/US1990000525

    申请日:1990-01-30

    CPC classification number: G01J5/10 G01J5/20 G01J5/22 G01J5/522 H01L27/1465

    Abstract: An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, whith the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-saphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.

    Abstract translation: 公开了一种红外(IR)模拟器,其中像素阵列通过电阻器桥限定在绝缘衬底上,电阻器桥在间隔开的位置处接触衬底,并且在接触位置之间与衬底分离,从而与衬底隔离。 衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥,从而从每个像素建立适当的红外辐射。 驱动电路以及至少一些电引线优选位于电阻桥下。 每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。 驱动电路采用产生基本上无闪烁操作的采样和保持电路,因为电阻器桥与它们各自的驱动电路阻抗匹配。 可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥,并用热发射材料覆盖电阻层。 该阵列优选形成在硅 - 硅膜(SOS)晶片上。 也可以形成电磁辐射桥接检测器阵列,其中桥具有电阻器,热电偶或肖特基结结构。

    STEREO SYNTHESIZER
    23.
    发明申请
    STEREO SYNTHESIZER 审中-公开
    立体声合成器

    公开(公告)号:WO1990011670A1

    公开(公告)日:1990-10-04

    申请号:PCT/US1989001167

    申请日:1989-03-27

    CPC classification number: H04S5/00 H04S1/002 H04S1/005

    Abstract: A stereo image enhancement system, in which difference signal components in relatively quieter difference signal frequency bands are boosted to provide an improved stereo image, is provided with a stereo input that is synthetically derived from a monaural signal (L + R). Simulated sum (L + R)s and simulated difference (L - R)s signals are provided from a monaural input (L + R) by sending the input through a phase shifter and splitter (12) that provides 0° and 90° outputs with a constant 90° phase separation between the two at all audio frequencies. The leading one of the two output signals from the phase shifter is employed as a simulated sum signal, and the other as a simulated difference signal. The simulated difference signal has different frequency components, each delayed by different amounts relative to corresponding components of like frequency of the simulated sum signal. This provides an effective synthetic difference signal, with both sum and difference signals being suitably filtered to provide an improved pair of synthetically derived stereo sum and difference signals (L + R)s, (L - R)s as inputs to an image enhancement circuit.

    OPTICAL NEURAL NETWORK AND METHOD
    24.
    发明申请
    OPTICAL NEURAL NETWORK AND METHOD 审中-公开
    光学神经网络和方法

    公开(公告)号:WO1990009641A1

    公开(公告)日:1990-08-23

    申请号:PCT/US1990000627

    申请日:1990-02-02

    CPC classification number: G06E3/00 G06N3/067

    Abstract: An optical neural network stores optical transmission weightings as angularly and spatially distributed gratings within a phase conjugate mirror (PCM) (38), the PCM (38) using a stimulated process to generate a phase conjugated return beam without separate external pump mechanisms. An error signal is generated in response to differences between the actual and a desired output optical pattern, and is used to adjust the PCM gratings toward the desired output. One or more intermediate image planes may be employed along with the input and output planes. The input and intermediate planes, as well as the error signal, are preferably displayed on the surface of a spatial light modulator (28). The output optical signal is transduced into an electrical format for training the neural network, with the error signal also generated electrically. A significant increase in neuron and interconnection capacity is realized, without cross-talk between neurons, compared to prior optical neural networks.

    LOW TEMPERATURE COFIRED CERAMIC PACKAGES FOR MICROWAVE AND MILLIMETER WAVE GALLIUM ARSENIDE INTEGRATED CIRCUITS
    25.
    发明申请
    LOW TEMPERATURE COFIRED CERAMIC PACKAGES FOR MICROWAVE AND MILLIMETER WAVE GALLIUM ARSENIDE INTEGRATED CIRCUITS 审中-公开
    用于微波和微波炉的低温辅助陶瓷包装阿塞拜疆一体化电路

    公开(公告)号:WO1990007793A1

    公开(公告)日:1990-07-12

    申请号:PCT/US1989005026

    申请日:1989-11-13

    Abstract: A low temperature cofired monolithic ceramic package (10) for use with microwave and millimeter wave gallium arsenide integrated circuits, or the like. In situ buried passive components (22), including capacitors, resistors, couplers and inductors are incorporated within a cofired substrate structure (12). Fields of interconnected staggered or stacked vias (56, 58) are provided in the substrate below the integrated circuit for efficient heat transfer and electrical connection to a ground plane (20) that eliminates complicated heat sink structures. At least one cavity (24) is provided in the top surface to confine integrated circuit chips (28). A plurality of connectable electrical conductors (34, 36, 38, 40, 42) including RF input and output leads and DC bias leads for the chip extend from the edge of the substrate (12) to the edge of the cavity (24). A sidewall (14) is extended around the periphery of the cavity (24) and comprises a low temperature cofired structure which is cofired with the substrate (12). The sidewall (14) has a metallized top surface and interconnected metallization and vias extending from the top surface to the top surface layer of the substrate (12). A cover (16) is provided which is attachable to the metallized top surface of the sidewall (14). The electrical and thermal interconnections provided in the sidewall (14) and substrate (12) are provided by means of the plurality of interconnected staggered or stacked via interconnects. Electrical and thermal integrity is achieved which permits dissipation of heat by way of the ground plane and top cover, and electrical shielding is achieved by interconnecting the conductive components.

    FIBER OPTIC RADAR GUIDED MISSILE SYSTEM
    27.
    发明申请
    FIBER OPTIC RADAR GUIDED MISSILE SYSTEM 审中-公开
    光纤雷达导向故障系统

    公开(公告)号:WO1990007093A1

    公开(公告)日:1990-06-28

    申请号:PCT/US1989004903

    申请日:1989-11-06

    CPC classification number: F41G7/2266 F41G7/2286 F41G7/2293 F41G7/32

    Abstract: A fiber optic radar guided missile system (10) is disclosed which includes a radar receiver (12) disposed in a missile for receiving radar reflections and providing a first optical signal in response thereto. An optical receiver (14) is disposed at a launcher for receiving the first optical signal and for providing a set of electrical signals in response thereto. A fiber optic link (32) is connected between the missile and the launcher for communicating the first optical signal from the radar receiver (12) to the optical receiver (14). In a specific embodiment, the invention (10) includes a first system (12) disposed in a missile for receiving radar reflections which includes only an antenna (16) for receiving radar reflections, a radar seeker (18) for providing a first electrical signal in response to the received radar reflections, and a first fiber optic transmitter (26) for converting the first electrical signal into a first optical signal. An optical receiver (14) is located at a launcher for receiving the first optical signal and for providing a set of electrical signals in response thereto. The optical receiver (14) at the launcher includes a first fiber optic receiver (48) for converting the first optical signal into a second electrical signal and a signal processor (56) for processing the second electrical signal and providing radar output data. A fiber optic link (32) is provided for communicating the first optical signal from the radar receiver (12) to the optical receiver (14) at the launcher and missile commands from the launcher to the missile.

    ULTRATHIN SUBMICRON MOSFET WITH INTRINSIC CHANNEL
    28.
    发明申请
    ULTRATHIN SUBMICRON MOSFET WITH INTRINSIC CHANNEL 审中-公开
    具有内部通道的超级SUBMICRON MOSFET

    公开(公告)号:WO1990006595A1

    公开(公告)日:1990-06-14

    申请号:PCT/US1989005327

    申请日:1989-11-27

    CPC classification number: H01L29/78654

    Abstract: A submicron MOSFET is fabricated on an ultrathin layer (16) with a generally intrinsic channel (14) having a dopant concentration less than about 10 cm . The channel (14) thickness is preferably not greater than about 0.2 micron; the ratio of channel thickness to length is less than about 1:4, and preferably not greater than about 1:2. Punchthrough and other short-channel effects are inhibited by the application of an appropriate backgate voltage, which may also be varied to adjust the voltage threshold.

    Abstract translation: 亚微米MOSFET在具有掺杂剂浓度小于约10 16 cm -3的通常本征通道(14)的超薄层(16)上制造。 通道(14)的厚度优选不大于约0.2微米; 通道厚度与长度之比小于约1:4,优选不大于约1:2。 通过施加适当的背栅电压来抑制Punchthrough和其它短通道效应,该背栅电压也可以改变以调节电压阈值。

    CLEANING PROCESS USING PHASE SHIFTING OF DENSE PHASE GASES
    29.
    发明申请
    CLEANING PROCESS USING PHASE SHIFTING OF DENSE PHASE GASES 审中-公开
    使用相变相的气相清洗清洗工艺

    公开(公告)号:WO1990006189A1

    公开(公告)日:1990-06-14

    申请号:PCT/US1989004674

    申请日:1989-10-23

    CPC classification number: B08B7/0021 C23G5/00

    Abstract: A process for removing two or more contaminants from a substrate in a single process. The substrate to be cleaned is contacted with a dense phase gas at or above the critical pressure thereof. The phase of the dense phase gas is then shifted between the liquid state and the supercritical state by varying the temperature of the dense fluid in a series of steps between temperatures above and below the critical temperature of the dense fluid. After completion of each step in the temperature change, the temperature is maintained for a predetermined period of time in order to allow contact with the substrate and contaminants and removal of the contaminants. At each step in the temperature change, the dense phase gas possesses different cohesive energy density or solubility properties. Thus, this phase shifting of the dense fluid provides removal of a variety of contaminants from the substrate without the necessity of utilizing different solvents. In alternative embodiments, ultraviolet radiation, ultrasonic energy, or reactive dense phase gas or additives may additionally be used.

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