公开(公告)号：BR112013001584A2

公开(公告)日：2016-05-10

申请号：BR112013001584

申请日：2011-06-08

Applicant: IBM

Inventor： ZINONI CARL ,  ALLENSPACH ROLF

IPC: G11C11/16 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

公开(公告)号：MY126038A

公开(公告)日：2006-09-29

申请号：MYPI20002272

申请日：2000-05-24

Applicant: IBM ,  EIDGENOESS TECH HOCHSCHULE

Inventor： ALLENSPACH ROLF ,  BACK CHRISTIAN ,  SIEGMANN HANS-CHRISTOPH

IPC: G11B5/00 ,  G11B5/65 ,  G11B5/02 ,  G11B5/09 ,  G11B5/74 ,  G11C11/16 ,  H01F13/00

Abstract: A SCHEME FOR ULTRAFAST MAGNETIZATION REVERSAL IN AN IN-PLANE MAGNETIZED LAYER (3) IS DISCLOSED. FOR THAT, AN EXTERNAL MAGNETIC FIELD Hex IS APPLIED SUCH THAT THE MAGNETIZATION M PROCESSES AROUND THE EXTERNAL MAGNETIC FIELD Hex AND THE EXTERNAL MAGNETIC FIELD Hex IS MAINTAINED UNTIL THE PRECESSION SUFFICES TO EFFECT THE MAGNETIZATION REVERSAL. THE EXTERNAL MAGNETIC FIELD Hex IS APPLIED APPROXIMATELY PERPENDICULAR TO THE MAGNETIZATION M.FIG. 1

公开(公告)号：DE60113136T2

公开(公告)日：2006-03-30

申请号：DE60113136

申请日：2001-09-26

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  BEDNORZ GEORG ,  MEIJER INGMAR

IPC: H01F10/32 ,  G11B5/00 ,  G11B5/127 ,  G11B5/245 ,  G11B5/31 ,  G11B5/49 ,  G11C11/16

Abstract: A ferromagnetic pinned layer (1) kept at a fixed magnetic orientation by a pinning layer (4) is separated from a ferromagnetic free layer (3) by a Mott insulator coupling layer (2). A controllable voltage source (5) is connected between the pinned layer (1) and the free layer (3). A sublayer of the coupling layer (2) whose width (d) increases with the voltage is converted to an electrically conducting and magnetically coupling metallic state. The magnetic exchange field acting on the free layer (3) which is controlled by the applied voltage via the width (d) of the electrically conducting sublayer of the coupling layer (2) can be used to switch the free layer (3) between states of parallel and antiparallel orientations with respect to the magnetic orientation of the pinned layer (1). This is used in memory cells and in a write head.

公开(公告)号：DE69810626D1

公开(公告)日：2003-02-13

申请号：DE69810626

申请日：1998-10-12

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  BISCHOF ANDREAS ,  DUERIG URS R

IPC: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/84 ,  G11B5/855 ,  H01F41/34 ,  G11B3/70 ,  G11B5/62 ,  G11B11/00 ,  G11B11/03 ,  G11B9/10

Abstract: A method of generating or modifying patterns of topically specific magnetic modifications in an at least potentially ferromagnetic surface comprising the step of subjecting said surface to a controlled impact of energized subatomic particles, preferably in the form of electron radiation, directed at said surface for producing a predetermined pattern of discrete magnetized areas on said surface. The method serves to increase the density of magnetically coded information on magnetic media, such as hard discs.

公开(公告)号：DE69319933D1

公开(公告)日：1998-08-27

申请号：DE69319933

申请日：1993-11-03

Applicant: IBM

Inventor： DUERIG URS ,  ALLENSPACH ROLF ,  GRUETTER PETER

IPC: G01Q90/00 ,  G11B5/33 ,  G11B11/00 ,  G11B11/10

Abstract: PCT No. PCT/EP93/03079 Sec. 371 Date May 2, 1996 Sec. 102(e) Date May 2, 1996 PCT Filed Nov. 3, 1993 PCT Pub. No. WO95/12882 PCT Pub. Date May 11, 1995An apparatus and a method for retrieving data stored on a magnetic medium with a high resolution is described. It is characterized by measuring a tunneling current which is partly depending on the magnetization of the medium (1). This dependence is caused by irradiating the medium (1) with polarized non-ionizing light. The tunneling current can be measured with a high lateral resolution by applying a probing tip (2) as known from conventional scanning tunneling microscopy or related techniques.

公开(公告)号：CA2785625C

公开(公告)日：2018-05-29

申请号：CA2785625

申请日：2011-06-08

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  ZINONI CARL

IPC: H01L27/22 ,  B82Y25/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

Abstract: Magnetic random access memory (hereinafter "MRAM") device, comprising: bit lines; write word lines; read word lines; and a plurality of memory bit cells being interconnected via the bit lines, the write word lines and the read word lines, each of the memory bit cells having a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element, wherein each of the write word lines and a respective number of the free ferromagnetic layer elements are formed as one single, continuous ferromagnetic line.

公开(公告)号：GB2500832B

公开(公告)日：2015-12-09

申请号：GB201310338

申请日：2012-02-03

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  ZINONI CARL

IPC: G11C19/08 ,  G11C11/16

Abstract: The invention is directed to a method of manufacturing a ferromagnetic device (10), having an elongated structure extending along a longitudinal direction (11), comprising a ferromagnetic material, wherein a transverse cross section (20) of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (21-23) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (20), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non-orthogonal) convex polygon.

公开(公告)号：GB2500832A

公开(公告)日：2013-10-02

申请号：GB201310338

申请日：2012-02-03

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  ZINONI CARL

IPC: G11C19/08 ,  G11C11/16

Abstract: The invention is directed to a ferromagnetic device (10), having an elongated structure extending along a longitudinal direction (11), comprising a ferromagnetic material, wherein a transverse cross section (20) of the ferromagnetic material, perpendicular to said longitudinal direction, is designed to provide a domain wall velocity above the Walker breakdown limit of the ferromagnetic material. In particular, at least a portion (21 - 23) of a peripheral contour of the ferromagnetic material forms, in the transverse cross-section (20), a non-orthogonal convex set. For example, the whole peripheral contour may realize a (non- orthogonal) convex polygon.

公开(公告)号：DE112012000271T5

公开(公告)日：2013-09-19

申请号：DE112012000271

申请日：2012-02-03

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  ZINONI CARL

IPC: G11C11/16

Abstract: Die Erfindung ist auf eine ferromagnetisches Einheit (10) mit einer länglichen Struktur, die sich entlang einer Längsrichtung (11) erstreckt, gerichtet, das einen ferromagnetischen Werkstoff aufweist, wobei ein transversaler Querschnitt (20) des ferromagnetischen Werkstoffs senkrecht zu der Längsrichtung so entworfen ist, dass er eine Domänenwand-Geschwindigkeit über der Walker-Durchbruchgrenze des ferromagnetischen Werkstoffs gewährleistet. Insbesondere bildet wenigstens ein Abschnitt (21 bis 23) einer peripheren Kontur des ferromagnetischen Werkstoffs in dem transversalen Querschnitt (20) einen nicht-orthogonalen konvexen Aufbau. Die gesamte periphere Kontur kann z. B. ein (nicht-orthogonales) konvexes Polygon bilden.

公开(公告)号：CA2785625A1

公开(公告)日：2012-01-05

申请号：CA2785625

申请日：2011-06-08

Applicant: IBM

Inventor： ALLENSPACH ROLF ,  ZINONI CARL

IPC: H01L27/22 ,  B82Y25/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12

Abstract: The Magnetic Random Access Memory (MRAM) device has read word lines, write word lines, bit lines, and a plurality of memory bit cells being interconnected via the read word lines, the write word lines and the bit lines, each of the memory bit cells having a fixed ferromagnetic layer element and a free ferromagnetic layer element separated by a dielectric tunnel barrier element, wherein each of the write word lines and a respective number of the free ferromagnetic layer elements are formed as one single, continuous ferromagnetic line.