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    DATA MANIPULATION APPARATUS
    22.
    发明专利
    DATA MANIPULATION APPARATUS 未知

    公开(公告)号：AU8106575A

    公开(公告)日：1976-11-18

    申请号：AU8106575

    申请日：1975-05-12

    Applicant: IBM

    Inventor： CHANG HSU ,  LEE SHARE-YOUNG

    IPC: B41J5/30 ,  B41J5/44 ,  G06F3/12 ,  G06F17/21 ,  G06F17/24 ,  G11C11/14 ,  G11C19/08 ,  G11C19/28 ,  H03K23/24 ,  H03K23/32 ,  G11B27/02

    Abstract: A text editing system which is completely comprised of magnetic bubble domain components (or charge-coupled devices) is described. The essential parts of the system are a passive storage comprising a plurality of shift registers which are a convertible structure, i.e., they can be randomly accessed or sequentially accessed depending upon the state of a plurality of conversion switches. This provides great flexibility in entry, retrieval, and restoring. An active storage comprising a plurality of shift registers is used for various text editing functions, such as insertion of data, deletion of data, etc. In the active storage, an editing shift register is provided which implements the various text editing functions using techniques such as freezing data bits and bypassing data bits in order to change the order of the data and to close gaps which may occur in the data. A write decoder is provided for selective entry of text into the passive storage and a read decoder is provided for selecting the contents of a specific shift register in the passive storage for data manipulation. The conversion switches are also used to control data flow paths or directions and to maintain the proper order of the data. Control circuits are provided to coordinate and control the functions of the various storages, the decoders, and the switches. The principles used for the overall system can be implemented with bubble domain devices or with charge coupled devices.

    DOMAIN TRANSFER BETWEEN ADJACENT MAGNETIC CHIPS
    26.
    发明专利
    DOMAIN TRANSFER BETWEEN ADJACENT MAGNETIC CHIPS 未知

    公开(公告)号：CA939057A

    公开(公告)日：1973-12-25

    申请号：CA130467

    申请日：1971-12-20

    Applicant: IBM

    Inventor： CHANG HSU

    IPC: G11C19/08

    Abstract: A structure for cylindrical, single wall magnetic domains using a plurality of magnetic chips to achieve large size devices, such as long shift registers. The magnetic chips are pieced together and domain propagation from one chip to another is effected by an interaction between domains located on adjacent chips. The domains themselves are not able to cross the boundary between adjacent chips. Propagation means in one chip brings domains representing information bits in that chip closely enough to a second chip that these domains will magnetically interact with other domains in the second chip, causing the domains in the second chip to then propagate as information bits. Consequently, a large device is comprised of a number of smaller segments which cooperatively interact. This overcomes the constraint of bit capacity limitation due to the dimensions of magnetic chips. This also facilitates the combined use of chips with different properties as designed for different functions.

    Magnetic film store
    29.
    发明专利
    Magnetic film store 未知

    公开(公告)号：GB1079500A

    公开(公告)日：1967-08-16

    申请号：GB5230364

    申请日：1964-12-02

    Applicant: IBM

    Inventor： CHANG HSU ,  MEE CHARLES DENIS ,  MIDDELHOEK SIMON ,  VOEGELL OTTO

    IPC: G11C7/02 ,  G11C11/14 ,  G11C11/15 ,  H01F10/30

    Abstract: 1,079,500. Circuits employing bi-stable magnetic elements. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 23, 1964 [Jan. 13, 1964], No. 52303/64. Heading H3B. [Also in Division H1] In a magnetic uniaxial film element store in which information is stored by magnetizing the film along one direction or the other along the easy axis, the film element having an associated range or associated ranges of values of magnetization along the hard axis variation within which can cause, by a creeping action, the switching or destruction of the stored information, the element is subjected to a disturb magnetic field which acts along the hard axis and varies within the range or a range and a bias magnetic field along the hard axis, the resultant of the bias and disturbs fields lying outside the associated range or ranges. It is stated that wall creeping is produced in both thick and thin magnetic films when the films are subjected to alternating fields in the hard direction of value 0À2 H K to 0À3 H K for thick films and 0À3 H K to 0 for thin films, Figs. 3, 4 (not shown). Since in word orientated memory systems the word field in a selected word or line can produce a strong disturb field in the hard direction in the elements of lines adjacent to the selected word these elements may be switched. In accordance with the invention an electrical conductor or strip 50 is disposed over ground plane 12À1 to cover the film elements 10 and the current therethrough from battery 56 is adjusted by resistor 54 so as to provide a magnetic field 32À1 in the hard direction and having a value at least 0À2 H K but not greater than 0À3 H K . Storage in the film is by passing a current of the appropriate polarity through the selected word line 18À1, 18À2, 18À3 coincidently with a current through the selected bit conductor 16À1, 16À2, 16À3. Read-out is by energization of the selected word line 18 such that the field produced thereby is less than H K to enable non-destructive read-out. When thin films are employed the bias field must be in the direction of the disturb fields which is possible in the application of the invention to a magnetic store since a unipolar word drive pulse is employed. If thick films are employed, i.e. greater than 900 Angstroms, the hard axis bias field may be in or against the direction of the disturb fields provided the disturb fields are approximately 0À6 H K . Random fields may be eliminated by shielding. In the arrangement of Fig. 6 (not shown) the strip conductor of Fig. 5 is replaced by a Helmholtz coil arrangement. The bit and drive lines need not be orthogonal.

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