21.
    发明专利
    未知

    公开(公告)号:DE3483459D1

    公开(公告)日:1990-11-29

    申请号:DE3483459

    申请日:1984-11-09

    Applicant: IBM

    Abstract: The apparatus includes a primary scanner including laser light sources (10B, 10C) and rotating polygonal mirror (12), which produces a scanning optical beam on a drum (16), and a photoresponsive error sensor (22, 24, 28) which effectively measures over the scan path the successive differences between the actual position of the scanning beam and the desired position of the scanning beam and produces error signal. A secondary scanner (30, 32) is connected to the error sensor for response to the error signals to dynamically correct the position of the scanning beam during the course of the scan. The primary scanner provides a main optical scanning beam and an auxiliary optical scanning beam (20C) traversing substantially the same optical path. The error sensor includes a graticule mask (22) having a substantially uniform optical density along the desired scan path and a graded optical density transverse to the desired scan path of the auxiliary scanning beam.

    OPTICAL DATA STORAGE MEDIUM
    23.
    发明专利

    公开(公告)号:DE3473669D1

    公开(公告)日:1988-09-29

    申请号:DE3473669

    申请日:1984-05-16

    Applicant: IBM

    Abstract: An optical storage medium incorporates stacked servo and data layers with the pattern of the servo layer being prepared prior to preparation of the data layer. The servo pattern comprises an undulation in a very thin film of high optical index material on the surface of the substrate of the medium. The undulating layer containing the servo pattern is separated from the active layer of the medium by a thin dielectric spacer film. The data layer is employed for formation of vesicular, or ablative or other marks forming surface discontinuities formed by any of the usual pit forming techniques. The preformatted servo information formed in the servo layer as buried undulations in the thin film is read out in amplitude or phase contrast. The thin undulating layer is of a significantly different index of refraction from the substrate and the next intervening layer. This layer can be transparent or semi-transparent. A smoothing layer is then applied over the phase-contrast layer to reduce any undulations at the top surface on which the active layer is formed. The amount of energy absorbed by the active layer of the structure is optimized for the data recording wavelength by choice of thickness of the smoothing layer.

    26.
    发明专利
    未知

    公开(公告)号:DE2702860A1

    公开(公告)日:1977-08-04

    申请号:DE2702860

    申请日:1977-01-25

    Applicant: IBM

    Abstract: The practice of this disclosure obtains a relatively high efficiency operation for a crystalline semiconductor solar cell containing various defects of the linear and planar types. Linear defects include screw dislocations as well as full and partial dislocations. Planar defects include twins, stacking faults, grain boundaries and surfaces. Such defects normally contain recombination centers at which electrons and holes generated in the semiconductor region recombine with loss to the external current of the charge carried thereby. Through application of the principles of this invention, especial dopant concentrations and conductivity regions are established in a finite region around the linear and planar defects so that electrons and holes which are generated in the semiconductor region by incident radiation are substantially collected for external current as consequence thereof.

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