公开(公告)号：CA958485A

公开(公告)日：1974-11-26

申请号：CA144641

申请日：1972-06-14

Applicant: IBM

Inventor： HO IRVING T ,  JEN TEH-SEN

IPC: G11C8/10 ,  G11C11/414 ,  G11C11/415 ,  H03K3/35 ,  H03K17/00 ,  H03K17/62 ,  H03K17/73

公开(公告)号：CA954220A

公开(公告)日：1974-09-03

申请号：CA127432

申请日：1971-11-12

Applicant: IBM

Inventor： BEAUSOLEIL WILLIAM F ,  HO IRVING T ,  PRICER W DAVID ,  JEN TEH-SEN

IPC: G11C11/403 ,  G11C11/406 ,  G11C11/4067 ,  G11C11/4094 ,  H01L23/535 ,  H01L27/07 ,  H01L27/102

Abstract: This specification discloses a stored charge storage cell for monolithic memories. The cell comprises a device akin to a silicon-controlled rectifier and can be schematically illustrated as an NPN and a PNP transistor connected together in what is commonly called a hook circuit. A fixed potential is applied to the semiconductor zone of the device not commonly used as a terminal for a silicon-controlled rectifier so that the cell is prevented from latching as a silicon-controlled rectifier or hook circuit would normally latch. The charge on the capacitance of collector-base PN junctions of the NPN and PNP transistors is then controlled to store data in the cell.

公开(公告)号：DE2356974A1

公开(公告)日：1974-07-04

申请号：DE2356974

申请日：1973-11-15

Applicant: IBM

Inventor： CHIN WILLIAM BENEDICT ,  JEN TEH-SEN

IPC: H03F3/21 ,  H03F3/20 ,  H03F3/213 ,  H03F3/30 ,  H03K5/02 ,  H03K19/017 ,  H03K19/0175 ,  H03K19/094

Abstract: An integrated circuit FET push-pull driver includes a first FET boot-strap circuit for charging the driver output node to a value below the driver supply voltage. A second FET boot-strap circuit adds additional charge to the output node to drive the output node to the supply voltage. An FET clamping circuit functions to prevent the additional charge from leaking off through the first boot-strap circuit.