Abstract:
Errors in parallel binary data produced by a plurality of data track, e.g., a plurality of parallel shift registers, are corrected by a system in which the shift registers which are stuck, i.e., inalterable, are determined and counted. By single Hamming error detection means, the presence of a Hamming error and an indication of the bit position of a single Hamming error is made. Comparison means determine if the indicated Hamming error is coincident with a stuck track. Then, dependent on the parity condition of the data as well as the count of stuck tracks, apparatus is provided for complementing one or more of the stuck tracks and/or correcting the indicated Hamming error.
Abstract:
Each of the pair of transistors of a flip-flop storage cell has its collector connected through a nonlinear impedance means to a low constant current source when the cell is in an inactive condition. The nonlinear impedance means for the conducting transistor maintains the ratio of the load impedance means to the base-emitter impedance of the conducting transistor greater than one to maintain the transistors of the cell in the desired bistable state when the transistors are connected to the low constant current source through the nonlinear impedance means.
Abstract:
This specification discloses a stored charged storage cell for implementation in monolithic memories. The storage cells are fabricated in an array form and are connected to accessing means for reading and writing information into and out of the array. An integrated circuit diffused common sensing line is connected to either selected rows or columns for reading and writing. These sensing lines are connected to a switchable current source. The cell itself clamps the output voltage swing and thus reduces power dissipation. The storage cells each comprise a pair of semiconductor elements for storing digital information on an associated parasitic capacitor. The pair of semiconductor devices are interconnected and operated in an AC mode so as to eliminate direct current paths and thus further prevent unnecessary power dissipation.
Abstract:
A bistable information storage unit which has a semiconductor device having two P-N heterojunctions arranged in opposing series relation. The heterojunctions each exhibit stable high and low impedance states due to a high density of material imperfections, including deep energy traps. In normal operation, the order of the impedance states of the heterojunctions of the device can be sensed and changed. The state or order of the junctions can be used to designate binary information.
Abstract:
This specification discloses a stored charge storage cell for monolithic memories. The cell comprises a device akin to a silicon-controlled rectifier and can be schematically illustrated as an NPN and a PNP transistor connected together in what is commonly called a hook circuit. A fixed potential is applied to the semiconductor zone of the device not commonly used as a terminal for a silicon-controlled rectifier so that the cell is prevented from latching as a silicon-controlled rectifier or hook circuit would normally latch. The charge on the capacitance of collector-base PN junctions of the NPN and PNP transistors is then controlled to store data in the cell.
Abstract:
Errors in parallel binary data produced by a plurality of data track, e.g., a plurality of parallel shift registers, are corrected by a system in which the shift registers which are stuck, i.e., inalterable, are determined and counted. By single Hamming error detection means, the presence of a Hamming error and an indication of the bit position of a single Hamming error is made. Comparison means determine if the indicated Hamming error is coincident with a stuck track. Then, dependent on the parity condition of the data as well as the count of stuck tracks, apparatus is provided for complementing one or more of the stuck tracks and/or correcting the indicated Hamming error.