公开(公告)号：GB2497490B

公开(公告)日：2014-02-26

申请号：GB201305905

申请日：2011-10-03

Applicant: IBM ,  JSR CORP

Inventor： CHANG JOSEPHINE ,  CHARNS LESLIE ,  CUMMINGS JASON E ,  GUILLORN MICHAEL ,  HUPKA LUKASZ J ,  KOLI DINESH ,  KONNO TOMOHISA ,  KRISHNAN MAHADEVAIYER ,  LOFARO MICHAEL F ,  NALASKOWSKI JAKUB W ,  NODA MASAHIRO ,  PENIGALAPATI DINESH K ,  YAMANAKA TATSUYA

IPC: H01L21/304 ,  H01L21/3105 ,  H01L29/66 ,  H01L29/786

公开(公告)号：GB2497490A

公开(公告)日：2013-06-12

申请号：GB201305905

申请日：2011-10-03

Applicant: IBM ,  JSR CORP

Inventor： CHANG JOSEPHINE ,  CHARNS LESLIE ,  CUMMINGS JASON E ,  GUILLORN MICHAEL ,  HUPKA LUKASZ J ,  KOLI DINESH ,  KONNO TOMOHISA ,  KRISHNAN MAHADEVAIYER ,  LOFARO MICHAEL F ,  NALASKOWSKI JAKUB W ,  NODA MASAHIRO ,  PENIGALAPATI DINESH K ,  YAMANAKA TATSUYA

IPC: H01L21/304 ,  H01L21/3105 ,  H01L29/66 ,  H01L29/786

Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.

公开(公告)号：DE68902551T2

公开(公告)日：1993-04-29

申请号：DE68902551

申请日：1989-02-03

Applicant: IBM

Inventor： JAGANNATHAN RANGARAJAN ,  KRISHNAN MAHADEVAIYER ,  WANDY GREGORY P

IPC: C23C18/40