22.
    发明专利
    未知

    公开(公告)号:BR8902555A

    公开(公告)日:1990-01-23

    申请号:BR8902555

    申请日:1989-06-02

    Applicant: IBM

    Abstract: This is a method for making layered structures of artificial high-Tc superconductor compounds by which on top of a seed crystal (7) having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers (4, 5, 6) of all constituent components are epitaxially grown in a predetermined sequence so as to create a sandwich structure not found in natural crystals. The epitaxial deposition of the constituent components is performed in a reaction chamber having evaporation facilities, inlets for metal-organic gases, and inlets for background gases including oxygen.

    23.
    发明专利
    未知

    公开(公告)号:BR8900147A

    公开(公告)日:1989-09-12

    申请号:BR8900147

    申请日:1989-01-13

    Applicant: IBM

    Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

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