公开(公告)号：DE3477624D1

公开(公告)日：1989-05-11

申请号：DE3477624

申请日：1984-12-18

Applicant: IBM

Inventor： BAECHTOLD WERNER ,  BARATOFF ALEXIS ,  GUERET PIERRE LEOPOLD ,  HARDER CHRISTOPH STEFAN ,  WOLF HANS PETER

IPC: H01L29/80 ,  H01L29/20 ,  H01L29/205 ,  H01L29/772 ,  H01L29/78 ,  H01L39/22

公开(公告)号：DE3876228T2

公开(公告)日：1993-06-03

申请号：DE3876228

申请日：1988-01-15

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

IPC: H01L39/22 ,  H01L39/14

Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

公开(公告)号：DE3876228D1

公开(公告)日：1993-01-07

申请号：DE3876228

申请日：1988-01-15

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

IPC: H01L39/22 ,  H01L39/14

Abstract: The field-effect structure comprises a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high- Tc metal-oxide superconductor, e.g. YBaCuO, having a carrier density of about 10 power 21/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched betweeen "zero" (undepleted, superconducting) and "very high" (depleted).

公开(公告)号：DE3576884D1

公开(公告)日：1990-05-03

申请号：DE3576884

申请日：1985-05-23

Applicant: IBM

Inventor： WOLF HANS PETER ,  YOUNG DONALD REEDER

IPC: H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/78 ,  H01L29/62

公开(公告)号：DE3572408D1

公开(公告)日：1989-09-21

申请号：DE3572408

申请日：1985-04-30

Applicant: IBM

Inventor： DIMARIA DONELLI JOSEPH ,  WOLF HANS PETER

IPC: H01L27/12 ,  G02F1/136 ,  G02F1/1365 ,  G09F9/35 ,  H01L29/861 ,  G02F1/133 ,  G09G3/36

公开(公告)号：BR8900147A

公开(公告)日：1989-09-12

申请号：BR8900147

申请日：1989-01-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

IPC: H01L39/22 ,  H01L39/14 ,  H01L29/76

Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).