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    22.
    发明专利
    未知

    公开(公告)号：DE3685842D1

    公开(公告)日：1992-08-06

    申请号：DE3685842

    申请日：1986-04-11

    Applicant: IBM

    Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  RUTZ RICHARD FREDERICK ,  WOODALL JERRY MACPHERSON

    IPC: H01L21/338 ,  H01L21/28 ,  H01L21/285 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/80 ,  H01L29/812

    Abstract: An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.

    25.
    发明专利
    未知

    公开(公告)号：DE2659041A1

    公开(公告)日：1977-07-14

    申请号：DE2659041

    申请日：1976-12-27

    Applicant: IBM

    Inventor： RUTZ RICHARD FREDERICK

    IPC: H05K3/46 ,  C01F7/02 ,  C01F7/16 ,  C04B41/53 ,  C04B41/91 ,  C09K13/00 ,  C23F1/00 ,  G01D15/18 ,  B28D5/06

    Abstract: A method is disclosed for forming holes and depressions in aluminum oxide, including its sapphire form and spinels by etching using AlN as a maskant. This method is featured by the epitaxial deposition of an AlN film on a sapphire body, for instance. The AlN film is etched in a predetermined pattern and heat treated. The etchants used may be either H2 or molten Al which will selectively attack the sapphire substrate in the regions exposed by the AlN mask.

    26.
    发明专利
    未知

    公开(公告)号：DE1222586B

    公开(公告)日：1966-08-11

    申请号：DEJ0019553

    申请日：1961-03-09

    Applicant: IBM

    Inventor： MARINACE JOHN CARTER ,  RUTZ RICHARD FREDERICK

    IPC: C22B41/00 ,  C23C16/46 ,  C25F3/12 ,  C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L29/00

    Abstract: A tunnel diode is formed by epitaxially depositing, in a closed container, a layer of semi-conductor of one conductivity type on a substrate of the opposite conductivity type by vapour deposition from a gaseous compound of the semi-conductor element and a transport element as in the parent Specification, the resulting junction being heat treated, either before, or during, the alloying of ohmic contacts thereto, to increase the ratio of peak to valley currents of the current voltage characteristic of the diode. In examples, germanium is deposited on germanium or gallium arsenide bodies which are then heat treated for 20 seconds-10 minutes at 665 DEG C.

    27.
    发明专利
    未知

    公开(公告)号：DE1063278B

    公开(公告)日：1959-08-13

    申请号：DEI0011724

    申请日：1956-05-24

    Applicant: IBM DEUTSCHLAND

    Inventor： RUTZ RICHARD FREDERICK

    IPC: G01S1/02 ,  H01L27/08 ,  H01L29/00 ,  H01Q15/22 ,  H01Q19/195 ,  H03B5/12 ,  H03K3/02 ,  H03K3/26 ,  H03K3/35 ,  H03K23/00

    Abstract: 842,351. Directive aerial systems. HOLLANDSE SIGNAALAPPARATER N. V. Sept. 19, 1956 [Oct. 3, 1955], No. 28109/55. Class 40(7). A directive aerial system capable of producing beams of two different shapes and of performing two different types of scanning motions comprises two electromagnetic wave radiators 105 and 107 producing respectively, beams of the required shape polarized at right angles to one another the radiators being positioned with respect to an auxiliary reflector 106 (situated at the focus of a beam concentrating device such as a reflector 101) which transmits waves having the polarization produced by the radiator 107, and reflects waves having the polarization produced by radiator 105 by producing a visual image of the latter also situated at the focus, so that with either radiator in use a narrow beam is produced by the system without the need for changing radiators such that each is physiccally situated at the focus. To reduce energy losses caused by the radiator 105 (and its waveguide feed 104) being in the field of radiator 107 and in its own reflected field, the arrangement shown in Fig. 3, in which the auxiliary reflector 306 is inclined to the axis of the reflector 301 and the radiator 305 positioned outside the produced beam, may be employed. The scanning motions produced by the system are (1) a conical "pencil beam" scan produced by eccentrically rotating radiator 107 (307) about the axis of reflector 101 (301) and (2) a linear scan with a "beaver tail" beam produced by causing the waveguide feed 104 (304) and radiator 105 (305) to swing about an axis parallel to the broad side of the beam by supplying guide 104 (304) from a fixed waveguide 302 via a hinged waveguide joint 303 (Fig. 3) which, in the construction of Fig. 1, is situated on the side of reflector 101 which is remote from radiator 105 (Fig. 2 not shown). Such scanning results in a variation of the terminating impedance of the waveguide and to avoid this the auxiliary reflector 406 (506) may be supported and carried by the swinging waveguide 404 (504) as shown in Figs. 4 and 5, or as shown in Fig. 6 in which the portions of the radiators 605 and 607 are received, the polarization effect of the auxiliary reflector 606 being also received. Instead of employing movement of the radiators to produce the scans, the latter may be fixed and the required scans produced by suitable movement of the auxiliary reflector. A constructional form of beam concentrating device consisting of two sets of mutually perpendicular conductors having an overlapping common area is described with reference to Fig. 7 (not shown). Specifications 753,038 and 753,039 are referred to.

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