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公开(公告)号:DE69322832T2
公开(公告)日:1999-08-05
申请号:DE69322832
申请日:1993-10-04
Applicant: IBM
Inventor: BEAMAN BRIAN SAMUEL , DOANY FUAD ELIAS , FOGEL KEITH EDWARD , HEDRICK JR JAMES LUPTON , LAURO PAUL ALFRED , NORCOTT MAURICE HEATHCOTE , RITSKO JOHN JAMES , SHI LEATHEN , SHIH DA-YUAN , WALKER GEORGE FREDERICK
IPC: G01R1/067 , G01R1/073 , H01L23/52 , G01R3/00 , G01R31/28 , H01L23/498 , H01L23/538 , H01L25/065 , H01L25/07 , H01L25/18
Abstract: The present invention is directed to a structure (2) for packaging electronic devices, such as semiconductor chips (36, 38), in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies (4, 6). Each assembly is formed from a substrate (8) having disposed on at least one surface a plurality of electronic devices. Each assembly is disposed in a stack of adjacent assemblies. Between adjacent assemblies there is an electrical interconnection means (49) electrically interconnecting each assembly. The electrical interconnection means is formed from an elastomeric interposer. The elastomeric interposer is formed from an elastomeric material having a plurality of electrical conductors extending therethrough, either in a clustered or un-clustered arrangement. The electrical interconnection means is fabricated having a plurality of apertures extending therethrough. The array of apertures corresponds to the array of electronic devices on the substrates. The aperture and electrical interconnection means is disposed over the array of electronic devices so that the electrical interconnection means is between adjacent electronic devices. The stack of assemblies is compressed thereby compressing the electrical interconnection means between adjacent assemblies. The substrate of each assembly is formed from a thermally conductive material such as diamond. A heat dissipation means is thermally connected to the edges of the substrate to extract heat generated within the structure. Methods for fabricating the electrical interconnection means as a stand alone elastomeric sheet are described. The ends (50, 54) of the plurality of conductors in the electrical interconnection means (49) are fabricated so that upon compression between adjacent assemblies (4, 6) there is a wiping action between the conductor ends (e.g. 50) and contact locations (e.g. 30) on the adjacent assemblies to form a good electrical contact therewith.
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公开(公告)号:DE69417640D1
公开(公告)日:1999-05-12
申请号:DE69417640
申请日:1994-06-28
Applicant: IBM
Inventor: AYALA-ESQUILIN JUAN , BEAMAN BRIAN SAMUEL , HARING RUDOLF ADRIAAN , HEDRICK JAMES LUPTON , SHIH DA-YUAN , WALKER GEORGE FREDERICK
Abstract: The present invention relates to an improved pinless connector for use in microelectronics having an elastomer resin comprising polysiloxane and filler. In particular the elastomer resin has a tensile strength greater than 170 psi and comprises (i) a crosslinked polysiloxane comprising about 70 to 90 weight % of a crosslinked random copolymer of dimethylsiloxane and diphenylsiloxane and (ii) about 10 to 30 weight % of filler comprising zinc oxide and a lanthanide oxide.
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公开(公告)号:DE69322832D1
公开(公告)日:1999-02-11
申请号:DE69322832
申请日:1993-10-04
Applicant: IBM
Inventor: BEAMAN BRIAN SAMUEL , DOANY FUAD ELIAS , FOGEL KEITH EDWARD , HEDRICK JR JAMES LUPTON , LAURO PAUL ALFRED , NORCOTT MAURICE HEATHCOTE , RITSKO JOHN JAMES , SHI LEATHEN , SHIH DA-YUAN , WALKER GEORGE FREDERICK
IPC: G01R1/067 , G01R1/073 , H01L23/52 , G01R3/00 , G01R31/28 , H01L23/498 , H01L23/538 , H01L25/065 , H01L25/07 , H01L25/18
Abstract: The present invention is directed to a structure (2) for packaging electronic devices, such as semiconductor chips (36, 38), in a three dimensional structure which permits electrical signals to propagate both horizontally and vertically. The structure is formed from a plurality of assemblies (4, 6). Each assembly is formed from a substrate (8) having disposed on at least one surface a plurality of electronic devices. Each assembly is disposed in a stack of adjacent assemblies. Between adjacent assemblies there is an electrical interconnection means (49) electrically interconnecting each assembly. The electrical interconnection means is formed from an elastomeric interposer. The elastomeric interposer is formed from an elastomeric material having a plurality of electrical conductors extending therethrough, either in a clustered or un-clustered arrangement. The electrical interconnection means is fabricated having a plurality of apertures extending therethrough. The array of apertures corresponds to the array of electronic devices on the substrates. The aperture and electrical interconnection means is disposed over the array of electronic devices so that the electrical interconnection means is between adjacent electronic devices. The stack of assemblies is compressed thereby compressing the electrical interconnection means between adjacent assemblies. The substrate of each assembly is formed from a thermally conductive material such as diamond. A heat dissipation means is thermally connected to the edges of the substrate to extract heat generated within the structure. Methods for fabricating the electrical interconnection means as a stand alone elastomeric sheet are described. The ends (50, 54) of the plurality of conductors in the electrical interconnection means (49) are fabricated so that upon compression between adjacent assemblies (4, 6) there is a wiping action between the conductor ends (e.g. 50) and contact locations (e.g. 30) on the adjacent assemblies to form a good electrical contact therewith.
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公开(公告)号:DE3781234D1
公开(公告)日:1992-09-24
申请号:DE3781234
申请日:1987-10-15
Applicant: IBM
Inventor: KIM JUNGIHL , LANGE WALTER FREDERICK , SHIH DA-YUAN , WEN SHEREE HSIAOU-RU
IPC: H01L23/52 , H01L21/3205 , H01L23/498 , H05K1/03 , H05K3/24 , H05K3/38 , H01L23/48
Abstract: A layer of zirconium (44) can be used as an adhesion layer between a ceramic or polyimide substrate (40) and subsequently applied metallic layers (46,48,50). Following the zirconium layer, copper can be deposited (46) followed by a reaction barrier layer (48) and a wettable surface layer (50) such as gold. This type of structure can be used for pin brazing, chip joining, and/or wire connections.
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