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    Method for fabricating silicon device on sapphire by wafer bonding
    3.
    发明专利
    Method for fabricating silicon device on sapphire by wafer bonding 审中-公开
    通过波形焊接在硅胶上制备硅器件的方法

    公开(公告)号：JP2003031781A

    公开(公告)日：2003-01-31

    申请号：JP2002132064

    申请日：2002-05-07

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

    Inventor： HSU LOUIS L ,  SHI LEATHEN ,  WANG LI-KONG

    IPC: H01L27/12 ,  H01L21/02 ,  H01L21/762

    CPC classification number: H01L21/76256

    Abstract: PROBLEM TO BE SOLVED: To provide a method for fabricating a microwave circuit and a radio frequency circuit in a silicon on a sapphire substrate.
    SOLUTION: An improved method for fabricating a silicon on sapphire structure and/or device is disclosed. In one suitable embodiment, a single silicon oxide layer is interposed between a silicon layer and a sapphire layer by attaching the silicon oxide layer onto the silicon layer through growth or deposition and then attaching the sapphire layer to the oxide layer through wafer bonding. In another embodiment, a first silicon oxide layer is attached to the silicon layer through growth or deposition. Subsequently, a second silicon oxide layer is attached to the sapphire layer by deposition, for example. Thereafter, the first silicon oxide layer and the second silicon oxide layer are bonded by wafer bonding technology.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：提供一种在蓝宝石衬底上的硅中制造微波电路和射频电路的方法。 解决方案：公开了一种用于制造蓝宝石结构和/或器件上的硅的改进方法。 在一个合适的实施例中，通过生长或沉积将硅氧化物层附着在硅层上，然后通过晶片接合将蓝宝石层附着到氧化物层，将硅单层氧化硅层介于硅层和蓝宝石层之间。 在另一个实施例中，通过生长或沉积将第一氧化硅层附着到硅层。 随后，例如通过沉积将第二氧化硅层附着到蓝宝石层。 此后，通过晶片接合技术将第一氧化硅层和第二氧化硅层接合。

    Low-cost strained soi substrate for high-performance cmos technology
    6.
    发明专利
    Low-cost strained soi substrate for high-performance cmos technology 有权
    用于高性能CMOS技术的低成本应变SOI衬底

    公开(公告)号：JP2008172234A

    公开(公告)日：2008-07-24

    申请号：JP2008000979

    申请日：2008-01-08

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： IEONG MEIKEI ,  YOUNG ALBERT M ,  SHI LEATHEN ,  TOPOL ANNA W ,  DOUGLAS C LA TULIPE JR ,  JAMES VICHICONTI

    IPC: H01L21/20 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L29/786

    CPC classification number: H01L21/02658 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/78 ,  H01L29/7843

    Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an SSOI structure which avoids epitaxial growth and subsequent wafer bonding steps.
    SOLUTION: A strained-semiconductor-on-insulator (SSOI) structure is manufactured. A strain-memorization technique is used to create strained semiconductor regions on an SOI substrate. The transistors formed on the strained semiconductor regions have higher carrier mobility because the semiconductor regions have been strained. The method disclosed includes (i) ion implantation to create a thin amorphization layer, (ii) deposition of a high stress film on the amorphization layer, (iii) a thermal anneal to recrystallize the amorphization layer, and (iv) removal of the high stress film. Because the SOI substrate was under stress during the recrystallization process, the final semiconductor layer will be under stress as well. The amount of stress and the polarity (tensile or compressive) of the stress can be controlled by the type and thickness of the high stress film.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种制造避免外延生长和随后的晶片接合步骤的SSOI结构的方法。 解决方案：制造了应变半导体绝缘体（SSOI）结构。 使用应变记忆技术在SOI衬底上产生应变半导体区域。 形成在应变半导体区域上的晶体管具有更高的载流子迁移率，因为半导体区域已经变形。 所公开的方法包括（i）离子注入以产生薄的非晶化层，（ii）在非晶化层上沉积高应力膜，（iii）热退火以使非晶化层重结晶，和（iv） 压力薄膜 由于在再结晶过程中SOI衬底处于应力状态，所以最终的半导体层也将受到应力。 应力的量和应力的极性（拉伸或压缩）可以通过高应力膜的类型和厚度来控制。 版权所有（C）2008，JPO＆INPIT

    Self-aligned soi with different crystal orientation using wafer bonding and simox process
    7.
    发明专利
    Self-aligned soi with different crystal orientation using wafer bonding and simox process 有权
    使用波形粘结和SIMOX工艺的具有不同晶体取向的自对准SOI

    公开(公告)号：JP2005057284A

    公开(公告)日：2005-03-03

    申请号：JP2004223211

    申请日：2004-07-30

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

    Inventor： GUARINI KATHRYN W ,  LEONG MEIKEI ,  SHI LEATHEN ,  YANG MIN

    IPC: H01L27/12 ,  H01L21/335 ,  H01L21/762 ,  H01L27/08

    CPC classification number: H01L21/76275 ,  H01L21/76267 ,  H01L21/76283

    Abstract: PROBLEM TO BE SOLVED: To provide an integrated circuit device which is formed on a SOI(silicon-on-insulator) substrate, which can realize highest performance of a specific device and has different crystal orientations.
    SOLUTION: The integrated circuit device includes at least the SOI substrate which has an upper semiconductor layer of a first crystal orientation and a semiconductor material of a second crystal orientation, the semiconductor material is substantially on the same plane surface and its thickness is the same to that of the upper semiconductor layer, and in an integrated circuit structure, the first crystal orientation is different from the second crystal orientation. The SOI substrate is formed by wafer bonding, ion implantation, and annealing.
    COPYRIGHT: (C)2005,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种形成在SOI（绝缘体上硅）衬底上的集成电路器件，其能够实现特定器件的最高性能并具有不同的晶体取向。 解决方案：集成电路器件至少包括具有第一晶体取向的上半导体层和第二晶体取向的半导体材料的SOI衬底，半导体材料基本上在同一平面上，其厚度为 与上半导体层相同，在集成电路结构中，第一晶体取向与第二晶体取向不同。 SOI衬底通过晶片接合，离子注入和退火形成。 版权所有（C）2005，JPO＆NCIPI

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