公开(公告)号：DE10142266A1

公开(公告)日：2003-04-03

申请号：DE10142266

申请日：2001-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GRAF WERNER ,  KIESLICH ALBRECHT ,  SACHSE HERMANN ,  GENZ OLIVER

IPC: H01L21/8242 ,  H01L21/3213 ,  H01L21/8234

Abstract: Process for removing polysilicon (8) applied to a substrate (2) comprises completely removing the polysilicon in first regions (7) of an integrated semiconductor arrangement before the surface of the substrate is reached. A mask (11) is applied to the first regions before the polysilicon is completely removed from the second regions. Preferably an insulating layer, more preferably a gate oxide layer, is used as the substrate. The first regions occupy less space than the second regions. The polysilicon is completely removed by dry etching or wet etching. The first and/or second regions are provided with gate stacks.