公开(公告)号：US09419112B2

公开(公告)日：2016-08-16

申请号：US14647360

申请日：2012-12-17

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Huilong Zhu ,  Jun Luo ,  Chunlong Li

IPC: H01L21/265 ,  H01L21/306 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/321 ,  H01L29/10 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L29/6681 ,  H01L21/265 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/32115 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/7851

Abstract: A method for manufacturing a fin structure is provided. A method according to an embodiment may include: forming a patterned pattern transfer layer on a substrate; forming a first spacer on sidewalls of the pattern transfer layer; forming a second spacer on sidewalls of the first spacer; selectively removing the pattern transfer layer and the first spacer; and patterning the substrate with the second spacer as a mask, so as to form an initial fin.

Abstract translation: 提供一种制造翅片结构的方法。 根据实施例的方法可以包括：在衬底上形成图案化图案转移层; 在所述图案转移层的侧壁上形成第一间隔物; 在所述第一间隔件的侧壁上形成第二间隔件; 选择性地去除图案转印层和第一间隔物; 并用第二间隔物作为掩模图案化衬底，以形成初始鳍。

公开(公告)号：US20150294879A1

公开(公告)日：2015-10-15

申请号：US14442890

申请日：2012-12-14

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong Zhu ,  Miao Xu ,  Jun Luo ,  Chunlong Li ,  Guilei Wang

IPC: H01L21/306 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L21/30625 ,  H01L21/31053 ,  H01L21/31105 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/1054 ,  H01L29/66545 ,  H01L29/66795

Abstract: Provided is a method for manufacturing a fin structure. The method may include forming an initial fin on a substrate, forming a dielectric layer on the substrate to cover the initial fin, planarizing the dielectric layer by sputtering, and further etching the dielectric layer back to expose a portion of the initial fin, wherein the exposed portion serves as a fin.

Abstract translation: 提供一种翅片结构的制造方法。 该方法可以包括在衬底上形成初始翅片，在衬底上形成电介质层以覆盖初始翅片，通过溅射对电介质层进行平面化，并进一步蚀刻介电层以暴露初始鳍片的一部分，其中 露出部分作为翅片。

公开(公告)号：US20150287606A1

公开(公告)日：2015-10-08

申请号：US14744835

申请日：2015-06-19

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qiang Xu ,  Chao Zhao ,  Jun Luo ,  Guilei Wang ,  Tao Yang ,  Junfeng Li

IPC: H01L21/285 ,  H01L21/28

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L21/76876 ,  H01L21/76877 ,  H01L29/66545

Abstract: A method of depositing a tungsten (W) layer is disclosed. In one aspect, the method includes depositing a SiH4 base W film on a surface of a substrate to preprocess the surface. The method includes depositing a B2H6 base W layer on the preprocessed surface. The SiH4 base W film may be several atom layers thick. The film and base W layer may be deposited in a single ALD process, include reactive gas soak, reactive gas introduction, and main deposition operations. Forming the film may include introducing SiH4 gas into a reactive cavity during the gas soak operation, and introducing SiH4 and WF6 gas into the cavity during the gas introduction operation. The SiH4 and WF6 gases may be alternately introduced, for a number of cycles depending on the thickness of the tungsten layer to be deposited.

Abstract translation: 公开了沉积钨（W）层的方法。 一方面，该方法包括在衬底的表面上沉积SiH 4基底W膜以预处理该表面。 该方法包括在预处理的表面上沉积B2H6基底W层。 SiH4基底W膜可以是几个原子层厚。 膜和基底W层可以沉积在单个ALD工艺中，包括反应气体浸泡，反应气体引入和主沉积操作。 形成膜可以包括在气体浸泡操作期间将SiH 4气体引入反应腔中，并且在气体引入操作期间将SiH 4和WF 6气体引入空腔。 SiH4和WF6气体可以根据待沉积的钨层的厚度交替地引入多个循环。