公开(公告)号：DE60039744D1

公开(公告)日：2008-09-18

申请号：DE60039744

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： HIMODA TATSUYA ,  MIYASHITA SATORU ,  SEKI SHUNICHI ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  TAKEUCHI YASUMASA ,  MATSUKI YASUO

IPC: H01L21/208 ,  C01B33/02 ,  C30B7/00

Abstract: A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor silicon by heat and/or light treatment. Thereby, it is possible to easily produce a silicon film having satisfactory characteristics as an electronic material at low costs, differing from the vacuum process, such as in CVD methods.

公开(公告)号：DE69831186T2

公开(公告)日：2006-06-08

申请号：DE69831186

申请日：1998-04-28

Applicant: JSR CORP

Inventor： HIRAOKA HIROYUKI ,  TAKEUCHI YASUMASA ,  KIMURA SHIN-ICHI ,  MATSUKI YASUO ,  OGAWA TOSHIHIRO ,  KIMURA MASAYUKI

IPC: G02F1/1337 ,  C08G73/10

Abstract: A method of producing a liquid crystal alignment layer comprising exposing an organic film to polarized pulse laser beam to align molecules in a surface portion of the organic film. There is provided a liquid crystal alignment layer composed of a polyamide film having aligned molecules in a surface portion.

公开(公告)号：AU2401502A

公开(公告)日：2002-06-03

申请号：AU2401502

申请日：2001-11-07

Applicant: JSR CORP

Inventor： SHIHO HIROSHI ,  KATO HITOSHI ,  OKADA SACHIKO ,  YONEKURA ISAMU ,  MATSUKI YASUO

IPC: C01G35/00 ,  C23C18/12 ,  H01L21/314 ,  H01L21/316

Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

公开(公告)号：EP2624279A4

公开(公告)日：2014-04-30

申请号：EP11828920

申请日：2011-09-22

Applicant: HITACHI HIGH TECH SCIENCE CORP ,  JAPAN SCIENCE & TECH AGENCY ,  JSR CORP

Inventor： KOYAMA YOSHIHIRO ,  YASAKA ANTO ,  SHIMODA TATSUYA ,  MATSUKI YASUO ,  KAWAJIRI RYO

IPC: H01J37/305 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01L21/02263 ,  C23C16/045 ,  C23C16/24 ,  C23C16/325 ,  C23C16/401 ,  C23C16/42 ,  C23C16/486 ,  C23C16/487 ,  C23C16/56 ,  H01J37/3178 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28079 ,  H01L21/28211 ,  H01L22/20 ,  H01L29/66568 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1087428A4

公开(公告)日：2005-07-27

申请号：EP00912945

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： SEKI SHUNICHI ,  SHIMODA TATSUYA ,  MIYASHITA SATORU ,  FURUSAWA MASAHIRO ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: C23C18/06 ,  C23C18/08 ,  C23C18/12 ,  H01L21/208 ,  H01L21/336 ,  H01L31/18 ,  H01L51/00 ,  H01L51/40 ,  C01B33/02

CPC classification number: C23C18/06 ,  C08G77/60 ,  C09D183/16 ,  C23C18/08 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/02636 ,  H01L29/6675 ,  H01L51/0005 ,  Y02P20/582

Abstract: A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.

Abstract translation: 含有硅前体的油墨组合物11被选择性地放电到预定区域上的衬底从喷墨头12，以形成硅前体的图案，并且经受一个热和/或光处理以将硅前体转化成在 非晶硅膜-15或多晶硅膜16的有机硅膜图案以低成本且低能量由此获得在大面积上。

公开(公告)号：EP2226368A4

公开(公告)日：2014-10-08

申请号：EP08865378

申请日：2008-12-24

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO ,  TOMINAGA TETSUO

IPC: C09D185/00 ,  B32B15/20 ,  C07C211/65 ,  C07F5/06 ,  C09D5/00 ,  C09D7/12 ,  C23C18/08 ,  C23C18/10 ,  C23C18/14

CPC classification number: C09D185/00 ,  B32B15/20 ,  C07C211/65 ,  C07F5/069 ,  C09D5/00 ,  C23C18/08 ,  C23C18/10 ,  C23C18/14

公开(公告)号：EP2065428A4

公开(公告)日：2011-11-02

申请号：EP07828866

申请日：2007-09-21

Applicant: JSR CORP

Inventor： IWASAWA HARUO ,  SAKAI TATSUYA ,  MATSUKI YASUO ,  TAMAKI KENTARO

IPC: C08G77/12 ,  C04B41/81 ,  C09D183/05 ,  H01L21/316 ,  H01L21/76

CPC classification number: H01L21/3124 ,  C08G77/06 ,  C08G77/12 ,  C08G77/16 ,  C09D183/04 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/316 ,  H01L21/76224

公开(公告)号：EP1092755A4

公开(公告)日：2004-12-22

申请号：EP00912922

申请日：2000-03-29

Applicant: JSR CORP

Inventor： MATSUKI YASUO

IPC: C01B33/04 ,  C01B33/08 ,  C08G77/60 ,  C08L1/00 ,  C09D1/00 ,  C09D183/00 ,  C09D183/16 ,  C23C18/12 ,  H01L21/205 ,  H01L21/28 ,  H01L21/288

CPC classification number: H01L21/02573 ,  C09D1/00 ,  C09D5/24 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02628

Abstract: A coating composition comprising either a silane compound represented by the general formula (1) SinX n or a modified silane compound represented by the general formula (2) SinX mYl and a solvent for the compound. In said formula (1) X is hydrogen or halogeno; and n is an integer of 4 or above, provided nX s may be the same or different from each other, and in said formula (2) X is hydrogen or halogeno; Y is boron or phosphorus; n is an integer of 3 or above; l is an integer of 1 or above; and m is an integer of n to 2n+3, provided mX s may be the same or different from each other. This composition is suitable for the production of devices involving the deposition of silicon films or boron- or phosphorus-doped silicon films on large-area substrates.

Abstract translation: 一种涂料组合物，其含有通式（1）所示的硅烷化合物SinX 1n或通式（2）所示的改性硅烷化合物SinX 2 mYl和该化合物的溶剂。 在所述式（1）中，X 1是氢或卤素; n为4以上的整数，nX 1可以相同也可以不同，上述式（2）中，X 2为氢或卤素。 Y是硼或磷; n是3或更大的整数; l是1或更大的整数; 并且m是n至2n + 3的整数，条件是mX 2可以彼此相同或不同。 该组合物适用于生产涉及在大面积衬底上沉积硅膜或硼或磷掺杂硅膜的器件。

公开(公告)号：EP1085579A4

公开(公告)日：2001-12-12

申请号：EP00912947

申请日：2000-03-29

Applicant: SEIKO EPSON CORP ,  JSR CORP

Inventor： FURUSAWA MASAHIRO ,  SEKI SHUNICHI ,  MIYASHITA SATORU ,  SHIMODA TATSUYA ,  YUDASAKA ICHIO ,  MATSUKI YASUO ,  TAKEUCHI YASUMASA

IPC: H01L27/142 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/042 ,  H01L21/208

CPC classification number: H01L31/202 ,  H01L31/046 ,  H01L31/077 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: A solar cell has a structure comprising a pair of electrodes between which are interposed at least two thin layers of semiconductor containing different types and/or concentrations of impurity. A process of producing the thin semiconductor layers comprises applying a silicide-containing liquid composition to a substrate to form a coating, and converting the coating to a silicon layer by heat treatment and/or photochemical processing.

公开(公告)号：EP2505613A4

公开(公告)日：2012-12-12

申请号：EP10832991

申请日：2010-10-15

Applicant: JSR CORP

Inventor： ARAI TAKAYUKI ,  TAKAHASHI MASAYUKI ,  KONNO KEIJI ,  MATSUKI YASUO

IPC: C08L83/05 ,  C08G77/12 ,  C08G77/398 ,  C08G77/58 ,  C08K5/057 ,  H01L23/29 ,  H01L51/50 ,  H01L51/52 ,  H05B33/04

CPC classification number: H05B33/04 ,  C08G77/12 ,  C08G77/58 ,  C08K5/057 ,  C08K5/5419 ,  H01L23/296 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A composition includes (A) a compound shown by the following general formula (1), and (B) a compound shown by the following general formula (2). €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ(R 1 )nM€ƒ€ƒ€ƒ€ƒ€ƒ(1)