公开(公告)号：WO2013074355A1

公开(公告)日：2013-05-23

申请号：PCT/US2012/063990

申请日：2012-11-07

Applicant: LUXVUE TECHNOLOGY CORPORATION

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  LAW, Hung-Fai Stephen ,  HU, Hsin-Hua

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

CPC classification number: H01L24/83 ,  B32B37/025 ,  B32B37/06 ,  B32B2457/20 ,  H01L21/67144 ,  H01L21/6833 ,  H01L24/75 ,  H01L24/95 ,  H01L24/97 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  Y10T156/1153 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  H01L2224/83 ,  H01L2924/00

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。

公开(公告)号：EP2780936A1

公开(公告)日：2014-09-24

申请号：EP12849914.2

申请日：2012-11-08

Applicant: Luxvue Technology Corporation

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  LAW, Hung-Fai Stephen ,  HU, Hsin-Hua

IPC: H01L21/677 ,  H05K13/04 ,  H05K13/02 ,  B65G49/07 ,  B65G47/91

CPC classification number: H01L29/167 ,  B32B38/18 ,  H01L21/67144 ,  H01L24/75 ,  H01L24/83 ,  H01L24/95 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2933/0066 ,  Y10T156/1153 ,  Y10T156/17 ,  Y10T156/1705 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  Y10T156/1911 ,  H01L2224/83 ,  H01L2924/00

Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.

公开(公告)号：EP2847789A1

公开(公告)日：2015-03-18

申请号：EP13788027.4

申请日：2013-05-01

Applicant: Luxvue Technology Corporation

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  HU, Hsin-Hua

IPC: H01L21/677 ,  H01L21/50 ,  B65G49/07

CPC classification number: B41J2/385 ,  B25J15/0052 ,  B25J15/0085 ,  B41J2/39 ,  B81B2201/038 ,  B81C99/002 ,  H01L21/67144 ,  H01L21/6835 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/0753 ,  H01L33/0079 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/29036 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/7565 ,  H01L2224/7598 ,  H01L2224/83815 ,  H01L2224/83855 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00014

Abstract: A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring portion that is deflectable into a space between a base substrate and the spring portion.

公开(公告)号：EP2780934A1

公开(公告)日：2014-09-24

申请号：EP12850366.1

申请日：2012-11-07

Applicant: Luxvue Technology Corporation

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  LAW, Hung-Fai Stephen ,  HU, Hsin-Hua

IPC: H01L21/58 ,  H01L21/677 ,  H05K13/04

CPC classification number: H01L24/83 ,  B32B37/025 ,  B32B37/06 ,  B32B2457/20 ,  H01L21/67144 ,  H01L21/6833 ,  H01L24/75 ,  H01L24/95 ,  H01L24/97 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/83005 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/15153 ,  Y10T156/1153 ,  Y10T156/1707 ,  Y10T156/1744 ,  Y10T156/1749 ,  Y10T156/1776 ,  H01L2224/83 ,  H01L2924/00

Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.

Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构之上的电极和覆盖电极的电介质层。 可以向微器件转移头和头阵列施加电压以从载体衬底拾取微器件，并将微器件释放到接收衬底上。

公开(公告)号：EP2780954A1

公开(公告)日：2014-09-24

申请号：EP12849508.2

申请日：2012-11-08

Applicant: Luxvue Technology Corporation

Inventor： HU, Hsin-Hua ,  BIBL, Andreas ,  HIGGINSON, John, A. ,  LAW, Hung-Fai, Stephen

IPC: H01L33/46 ,  H01L33/48 ,  H01L33/36

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

公开(公告)号：EP2780953A1

公开(公告)日：2014-09-24

申请号：EP12849007.5

申请日：2012-11-08

Applicant: Luxvue Technology Corporation

Inventor： BIBL, Andreas ,  HIGGINSON, John A. ,  LAW, Hung-Fai Stephen ,  HU, Hsin-Hua

IPC: H01L33/36

Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.

Abstract translation: 描述了微发光二极管（LED）和形成用于转移到接收衬底的微型LED阵列的方法。 微LED结构可以包括微p-n二极管和金属化层，金属化层位于微p-n二极管和键合层之间。 共形电介质阻挡层可以跨越微p-n二极管的侧壁。 微型LED结构和微型LED阵列可被拾取并转移到接收基板。