公开(公告)号：JP2001093908A

公开(公告)日：2001-04-06

申请号：JP27152299

申请日：1999-09-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OGIWARA ATSUSHI ,  OKA NAOMASA

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small element area and can suppress damages caused by wire bonding, and a method for manufactur ing the device. SOLUTION: In a semiconductor device, an n+-type drain diffusion areas 4 which is formed as an impurity diffusion layer is formed in the n-type silicon layer (silicon active layer) of an SOI substrate constituted by forming the silicon layer 3 on a single-crystal silicon substrate 1 through a silicon oxide insulating layer 2. The surface-side part of the portion overlapping the diffusion area 4 of a drain electrode 7 constituting metallic wiring becomes a drain pad 17 serving as a bonding pad. An impact relieving section 9 composed of a silicon oxide film is provided between the drain pad 17 and the diffusion area 4 so as to relieve the impact given to the diffusion area 4 at the time of performing wire bonding. The impact relieving section 9 is formed on the portion overlapping the drain pad 17 of the diffusion area 4.

公开(公告)号：JP2001007112A

公开(公告)日：2001-01-12

申请号：JP17763299

申请日：1999-06-24

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OKUTO TAKASHI ,  OKA NAOMASA ,  OGIWARA ATSUSHI

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming an aluminum wiring good in surface condition. SOLUTION: In a method of forming an aluminum wiring comprising the step of forming an insulation layer 2 on one main surface of a semiconductor substrate 1, the step of removing a part of the insulation layer 2 to expose the surface of the semiconductor substrate 1 surface the step of, forming an Al wiring 3 with a specified pattern on the exposed surface of the substrate 1 and the insulation layer 2, and the step of forming a passivation film 4 on the insulation layer 2 and the Al wiring 3, silicon 34 is implanted only at positions corresponding to the exposed part of the substrate 1 in at least either the Al wiring 3 or the semiconductor substrate 1.

公开(公告)号：JP2000286264A

公开(公告)日：2000-10-13

申请号：JP8970399

申请日：1999-03-30

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OKUTO TAKASHI ,  OKA NAOMASA ,  OGIWARA ATSUSHI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming aluminum wiring whose surface conditions are satisfactory. SOLUTION: This formation method includes a process of forming an insulating layer 2 on one main surface of a semiconductor substrate 1, a process of forming aluminum wiring including silicon on the insulating layer 2 by sputtering, and a process of forming a passivation film 4 on the insulating layer 2 and an aluminum wiring 3. In this case, the surface part (surface of a pad) of the location, where the passivation him 4 is not made of the aluminum wiring 3, is removed.

公开(公告)号：JPH11312662A

公开(公告)日：1999-11-09

申请号：JP11913198

申请日：1998-04-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OGIWARA ATSUSHI ,  OKA NAOMASA ,  OKUTO TAKASHI

IPC: H01L21/306 ,  H01L21/304 ,  H01L21/308

Abstract: PROBLEM TO BE SOLVED: To provide the processing method of a semiconductor substrate, wherein the dispersion in the digging depth by etching is eliminated. SOLUTION: Between a first semiconductor layer 1 and the second semiconductor layer 3, an intermediate layer 2 which comprises the material whose etching rate is larger than that of first and second a semiconductor layers 1 and 3 with respect to first etching method, is formed, and a semiconductor substrate is formed. Of the first and second semiconductor layers 1 and 3, one semiconductor layer is partially etched, until the layer reaches the intermediate layer 2 by the second etching method. Then, etching is performed until a bottom part 5 of the intermediate layer 2 reaches the other semiconductor layer by the first etching method.

公开(公告)号：JPH11298000A

公开(公告)日：1999-10-29

申请号：JP10515298

申请日：1998-04-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OKUTO TAKASHI ,  SUZUKI YUJI ,  OKA NAOMASA ,  OGIWARA ATSUSHI

IPC: H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a power MOSFET, which has each electrode on the major front plane and has a low on-resistance, and to provide a method for manufacturing such power MOSFET. SOLUTION: On the major front plane of an (n) type silicon substrate 1, (p) type well regions 2a, 2b and 2c which are separated by trenches 9, and an (n) type drain region 4 are formed at an interval. On each of the major front planes of the (p) type well regions 2a, 2b and 2c, (n) type source regions 3a, 3b and 3c are respectively formed. A gate electrode 7 is formed on the inner circumference plane of the trench through a gate oxide film 5.

公开(公告)号：JPH1197356A

公开(公告)日：1999-04-09

申请号：JP25740297

申请日：1997-09-24

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KAMAKURA MASAARI ,  OKA NAOMASA ,  OGIWARA ATSUSHI ,  OKUTO TAKASHI

IPC: H01L21/205

Abstract: PROBLEM TO BE SOLVED: To suppress forming of an inverted layer due to auto doping, by mounting on a susceptor a semiconductor substrate having a high-concn. second conductivity type buried victim layer, and semiconductor substrate contg. a first conductivity type impurity at a high concn. through the epitaxial growth. SOLUTION: A manufacturing method comprises steps of depositing and thermally diffusing a p-type impurity, using a field oxide film having openings as a mask to form a p-through buried victim layer, etching to perfectly remove the field oxide film, and forming an epitaxial layer on the p-through buried victim layer of an Si substrate 1, wherein this substrate 1 having the victim layer and another Si substrate 2 contg. P or other n-type impurity at a high concn. are mounted on a susceptor S of an induction heating epitaxial growth apparatus, and the susceptor S is rotated with center at a rotary shaft 3 during forming of the epitaxial on the substrate 1.

公开(公告)号：JPH10335466A

公开(公告)日：1998-12-18

申请号：JP13691897

申请日：1997-05-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OKA NAOMASA ,  KAMAKURA MASATOMO ,  OGIWARA ATSUSHI ,  OKUTO TAKASHI

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/82 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device and its fabrication method which can adjust the resistance value with high precision. SOLUTION: An n+type impurity region 2 is formed in a single-crystal silicon substrate 1 such that the region 2 encloses a V-shaped trench portion 1a formed on one main surface of the single-crystal silicon substrate 1. A phosphorus (P) rich polycrystal silicon layer 4 is formed at the surface side on which the trench portion 1a of the polycrystal substrate 1 is formed by way of a silicon oxide film 3 having a thin film thickness. The silicon oxide film 3 is formed in such a manner that the film thickness becomes thinnest at the bottom portion of the trench portion 1a and the polycrystal silicon layer 4 is disposed at the portion where the trench portion 1a is formed. An interlayer insulation film 5 is formed on the silicon oxide film 3 and the polycrystal silicon layer 4. The silicon oxide film 3 and the interlayer insulation film 5 which are formed on the upper portion of the n+type impurity region 2 and the polycrystal silicon layer 4 have respective parts thereof removed so as to connect the n+type impurity region 2 and the polycrystal silicon layer 4 with aluminum wiring electrodes 6a, 6b.

公开(公告)号：JPH08274092A

公开(公告)日：1996-10-18

申请号：JP7108995

申请日：1995-03-29

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： OGIWARA ATSUSHI

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768

Abstract: PURPOSE: To enhance the reliability of multilayer aluminum wiring by preventing aluminum layers in through holes from being corroded by residual gas or water in an applied glass film, by the function of a metal film. CONSTITUTION: An aluminum wiring 2, an oxide film 3, an applied glass film 4, and an oxide film 5 are formed on an insulation film 1, and a through hole 7 reaching the aluminum wiring 2 is formed. A metal film 9 having corrosion resistance higher than aluminum is formed on the whole of the surfaces including the inside surface of the through hole 7. And the metal film 9 is left unremoved only on the inside surface of the through hole 7 by anisotropic etching. and an aluminum layer 8 is formed on the whole surfaces including the inside surface of the through hole 7.

公开(公告)号：JP2006146069A

公开(公告)日：2006-06-08

申请号：JP2004339254

申请日：2004-11-24

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： YOSHIHARA TAKAAKI ,  OGIWARA ATSUSHI ,  HARADA HIROSHI ,  KONO KIYOHIKO

IPC: G02B6/32

Abstract: PROBLEM TO BE SOLVED: To obtain a ball lens fixing structure that enables an optical fiber and a ball lens to be aligned more easily and more accurately.
SOLUTION: Two substrates 2, 3 are joined in a manner that the grooves (2b, 3b) provided in each joining face 2a, 3a of the two substrates 2, 3 are faced with each other to form a cavity 4. The cavity 4 has a square cross section, with the area of the cross section gradually decreasing from one end to the other in the extending direction of the grooves, and with the center axis 8 which coincides with the optical center axis. A ball lens 6 is inserted into the cavity 4 and fixed.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：获得能够更容易且更准确地对准光学和球形透镜的球透镜固定结构。 解决方案：两个基板2,3以这样的方式接合，使得设置在两个基板2,3的每个接合面2a，3a中的凹槽（2b，3b）彼此面对以形成空腔。 空腔4具有正方形横截面，横截面的面积在凹槽的延伸方向上从一端到另一端逐渐减小，并且中心轴线8与光中心轴线重合。 将球镜6插入空腔4并固定。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005278332A

公开(公告)日：2005-10-06

申请号：JP2004089739

申请日：2004-03-25

Applicant: Matsushita Electric Works Ltd ,  松下電工株式会社

Inventor： KONO KIYOHIKO ,  HARADA HIROSHI ,  OKA NAOMASA ,  NOGE HIROSHI ,  SUZUKI YUJI ,  OGIWARA ATSUSHI ,  YOSHIHARA TAKAAKI ,  JOMI HIROTAKA

IPC: G02B26/08 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To provide an actuator high in mobile stability by reducing unnecessary static power and easy in mobile control, and an optical device. SOLUTION: The actuator comprises a first comb-shaped electrode having a plurality of first electrode fingers 13, and a second comb-shaped electrode having a plurality of electrode fingers 14a, 14b that are engaged with the plurality of first electrode fingers 13. The width of the first electrode finger 13 at the finger tip 19a of the first electrode finger 13 is wider than the root 20 of the first electrode finger 13. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：通过减少不必要的静电和容易的移动控制来提供高移动性的致动器以及光学装置。 解决方案：致动器包括具有多个第一电极指13的第一梳状电极和具有与多个第一电极指13接合的多个电极指14a，14b的第二梳状电极 第一电极指13的指尖19a处的第一电极指13的宽度比第一电极指13的根部20宽。（C）2006年，JPO和NCIPI