Abstract:
An apparatus for automatically positioning electronic die within temporary packages to enable continuity testing and the like between the die bond pads and the temporary package electrical interconnects is provided. The apparatus includes a robot having a programmable robot arm with a gripper assembly, die and lid feeder stations, a die inverter, and a plurality of cameras or image producers. The cameras take several pictures of the die and temporary packages to precisely align the die bond pads with the temporary package electrical interconnects. A predetermined assembly position is located along a conveyor that conveys a carrier between a first position, corresponding to an inlet, and a second position, corresponding to an outlet. The die, a restraining device and temporary package are assembled at the predetermined assembly position and tested for continuity therebetween. The apparatus further includes a fifth camera which locates the die at a wafer handler. The apparatus has a control mechanism including a microprocessor and associated program routines that selectively control the robot arm (i) to move the gripper assembly to the lid feeder station to pick up a lid, (ii) to move the gripper assembly along with the lid to pick up the die following photographing by the rough die camera, (iii) to move the gripper assembly along with the lid and the die to a position to be photographed by the fine die camera, and (iv) to move the lid and the die to the predetermined assembly position located along the conveyor. The method and apparatus may also be used for disassembly.
Abstract:
Fast CMOS fully differential logic circuitry, using only tristatable buffers, and capable of as low as a single transistor propagation delay. The preferred embodiment of the invention includes four tristatable buffers (A1, A2, A3, and A4) connected together in such a way as to have multiple differential inputs and one differential output. Different configurations of the output and inputs make different logic functions available. An alternate embodiment combines three of these logic circuits to make a fully differential 3-input full adder, generating sum (SUM/SUM*) and carry outputs (COUT/COUT*) within two transistor delays.
Abstract:
A method and apparatus for laser ablation deposition of materials onto a substrate (30). The disclosed method and apparatus facilitate the deposition of thin films of a target material (24) onto a substrate (30) having features of high aspect ratio, e.g., an aspect ratio greater than one. In one embodiment, a laser ablation apparatus is provided in which the target support and substrate (wafer) support are independently angularly adjustable (54, 56), such that the angle ( theta A) at which material ablated from the target (24) is deposited onto the substrate (30) can be adjusted and controlled. Uniformity of deposited layers may be further enhanced by moving (e.g., rotating or raster scanning) the target (24) with respect to the laser and/or by moving (e.g., rotating or raster scanning) the substrate (30) with respect to the target (24).
Abstract:
Methods and apparatus for forming word line stacks are comprised of a silicon diffusion barrier region, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.
Abstract:
A contour indicator that visually indicates non-uniformities in the planarity of the planarizing surface of a polishing pad. In one embodiment of the invention, a polishing pad has a polishing body with a planarizing surface facing the wafer and a contour indicator embedded in the polishing body. The contour indicator is preferably the material of the polishing body dyed to a color or shade that is visually distinguishable from the polishing body. The contour indicator preferably has first and second sidewalls spaced apart from one another at the planarizing surface of the polishing body, and the contour indicator also has a cross-sectional shape so that the distance between the first and second sidewalls changes with increasing the depth within the pad. In operation, the distance between the first and second sidewalls of the contour indicator changes as material is removed from the planarizing surface, and the distance between the first and second sidewalls at the planarizing surface indicates the contour of the planarizing surface.
Abstract:
A method and apparatus for testing semiconductor memory chips, such as DRAMs, having a plurality of memory cells or bits. Each memory chip has a unique identifier stored in a database. Tests are performed on the memory chips and when a memory chip fails a test, the memory chip is placed in a repair bin and a test identifier is stored in the database in association with the memory chip identifier. In order to repair the memory chip, failed tests are read out of the database and such tests are again performed on the failed memory chip in order to determine which memory cell in the memory chip is faulty. The failed memory cells are then repaired.
Abstract:
A novel bi-level DRAM architecture is described which achieves significant reductions in die size while maintaining the noise performance of traditional folded architectures. Die size reduction results primarily by building the memory arrays with 6F or smaller memory cells in a type of cross point memory cell layout. The memory arrays utilize stacked digitlines and vertical digitline twisting to achieve folded architecture operation and noise performance.
Abstract:
Titanium aluminum nitrogen ("Ti-Al-N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti-Al-N layer serves as a cap layer (56) which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs) (150), the Ti-Al-N layer (200) prevents light originating at the display screen (118) anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment an aluminum conductive layer (54) and a titanium-aluminum underlayer (52) are formed beneath the antireflective cap layer. The Ti-Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.
Abstract:
A memory device module in a package having externally accessible contacts includes multiple integrated memory circuits accessible to external circuitry exclusively through the contacts. An accessing circuit for each memory circuit accesses memory cells in the memory circuit for communication with the external circuitry. Each accessing circuit can be enabled to access redundant memory cells instead of inoperative memory cells by an enabling signal. An enabling circuit for each accessing circuit can output the enabling signal in response to receiving a unique set of input signals from external circuitry. Each unique set is selected with fuses in each enabling circuit, and includes row and column address strobe signals and a data signal. Upon receiving its unique set, one of the enabling circuits advantageously enables its associated accessing circuit to access redundant memory cells without the accessing circuits of the other memory circuits also being so enabled.
Abstract:
A configuration for a laser fuse bank is disclosed wherein the available space is more efficiently used. Fuses (101, 102, 103) of graduated width and variable configuration are placed so as to minimize the average distance between fuses and maximize fuse density. Alternatively, a common source is added to a standard laser fuse structure such that it intersects the fuses and the number of available fuses is doubled.