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    INTEGRATED DISPLAYS USING NANOWIRE TRANSISTORS
    21.
    发明申请
    INTEGRATED DISPLAYS USING NANOWIRE TRANSISTORS 审中-公开
    使用纳米晶体管的集成显示

    公开(公告)号：WO2004032190A3

    公开(公告)日：2005-06-23

    申请号：PCT/US0330636

    申请日：2003-09-30

    Applicant: NANOSYS INC

    Inventor： STUMBO DAVID ,  EMPEDOCLES STEPHEN

    IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/1362 ,  G09G3/20 ,  H01L21/77 ,  H01L27/28 ,  H01L27/32 ,  H01L29/06 ,  H01L51/00 ,  H01L51/05 ,  G09G3/22 ,  G09G3/30 ,  G09G3/36 ,  H01L21/336

    CPC classification number: G09G3/20 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G02F1/13454 ,  G02F2202/36 ,  G09G3/3648 ,  G09G2300/08 ,  G11C13/025 ,  H01L27/1214 ,  H01L27/283 ,  H01L27/3262 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0512

    Abstract: The present invention is directed to a display using nanowire transistors (330A, 330B). In particular, a liquid crystal display (300) using nanowire pixel transistors (330A, 330B), nanowire row transistors (310A, 310n), nanowire column transistors (320A, 320n) and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors (320A) is used to turn nanowire pixel transistors that are located along a row trace (350A) connected to the pair of nanowire row transistors on and off. Nanowire column transistors (310A) are used to apply a voltage across nanowire pixel transistors that are located along a column trace (340A) connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.

    Abstract translation: 本发明涉及使用纳米线晶体管（330A，330B）的显示器。 特别地，描述了使用纳米线像素晶体管（330A，330B），纳米线行晶体管（310A，310n），纳米线列晶体管（320A，320n）和纳米线边缘电子器件的液晶显示器（300）。 纳米线像素晶体管用于控制跨越包含液晶的像素施加的电压。 一对纳米线行晶体管（320A）被用于转动沿着连接到该对纳米线行晶体管的行迹线（350A）上的纳米线像素晶体管的导通和截止。 纳米线列晶体管（310A）用于沿着连接到纳米线柱晶体管的列迹线（340A）定位的纳米线像素晶体管施加电压。 还提供了包括有机发光二极管（OLED）显示器，纳米管场效应显示器，等离子体显示器，微镜显示器，微机电（MEM））显示器，电致变色显示器和使用纳米线晶体管的电泳显示器的显示器。

    NANOWIRE VARACTOR DIODE AND METHODS OF MAKING SAME
    24.
    发明申请
    NANOWIRE VARACTOR DIODE AND METHODS OF MAKING SAME 审中-公开
    纳米级变压器二极管及其制造方法

    公开(公告)号：WO2005112122A2

    公开(公告)日：2005-11-24

    申请号：PCT/US2005008891

    申请日：2005-03-17

    Applicant: NANOSYS INC ,  STUMBO DAVID ,  CHEN JIAN ,  HEALD DAVID ,  PAN YAOLING

    Inventor： STUMBO DAVID ,  CHEN JIAN ,  HEALD DAVID ,  PAN YAOLING

    IPC: H01L29/06 ,  H01L29/93

    CPC classification number: B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/93 ,  Y10S977/762

    Abstract: A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.

    Abstract translation: 公开了一种纳米线变容二极管及其制造方法。 该结构包括运行半导体纳米线长度的同轴电容器。 在一个实施例中，第一导电类型的半导体纳米线沉积在衬底上。 在纳米线表面的至少一部分上形成绝缘体。 纳米线的区域掺杂有第二导电类型的材料。 在绝缘体和掺杂区域的至少一部分上形成第一电接触。 在纳米线的非掺杂药液上形成第二电接触。 在操作期间，纳米线表面的导电类型反转，并且在向第一和第二电触点施加电压时形成耗尽区。 因此，变容二极管作为施加电压的函数呈现可变电容。

    ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES
    28.
    发明申请
    ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES 审中-公开
    人造电子使用纳米结构

    公开(公告)号：WO2006110162A3

    公开(公告)日：2007-09-13

    申请号：PCT/US2005029122

    申请日：2005-08-16

    Applicant: NANOSYS INC ,  STUMBO DAVID ,  EMPEDOCLES STEVE ,  LEON FRANCISCO ,  PARCE J WALLACE

    Inventor： STUMBO DAVID ,  EMPEDOCLES STEVE ,  LEON FRANCISCO ,  PARCE J WALLACE

    IPC: H01L21/20 ,  B32B15/04 ,  H01L21/335 ,  H01L27/108 ,  H01L29/00 ,  H01L29/08 ,  H01L29/76

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01L29/0673 ,  H01L29/4908 ,  H01L51/0537 ,  Y10S977/743 ,  Y10S977/745 ,  Y10S977/762 ,  Y10S977/813 ,  Y10S977/936

    Abstract: Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ration, orientation and density of the nanostructures. Additionally, a controllabe artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).

    Abstract translation: 公开了使用纳米结构的人造电介质，例如纳米线。 在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。 人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。 使用纳米结构的人造电介质可以实现非常高的介电常数。 介电常数可以通过改变纳米结构的长度，直径，载流子密度，形状，长宽比，取向和密度来调节。 另外，公开了使用纳米线等纳米结构的控制人造电介质，其中通过向可控人造电介质施加电场可以动态地调节介电常数。 各种电子器件可以使用具有纳米结构的人造电介质来提高性能。 示例性器件包括电容器薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其他类型的滤波器和雷达衰减材料（RAM）。

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