公开(公告)号：JP2011101047A

公开(公告)日：2011-05-19

申请号：JP2011015801

申请日：2011-01-27

Applicant: Nanosys Inc ,  ナノシス・インコーポレイテッドNanosys, Inc.

Inventor： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC: H01L29/06 ,  B82B1/00 ,  C01B31/02 ,  H01L21/00 ,  H01L21/331 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/737 ,  H01L29/786 ,  H01L29/861 ,  H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  H01L35/34 ,  H01L41/18 ,  H01L41/193 ,  H01L41/22 ,  H01L41/24 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for obtaining an electronic substrate including a plurality of semiconductor devices. SOLUTION: A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed in the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-type doping nanowires and n-type doping nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for arranging nanowires on substrates, nanowire spraying techniques for forming nanowires as a film, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface levels in nanowires are described. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和装置。 解决方案：在衬底上形成纳米线的薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p型掺杂纳米线和n型掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上排列纳米线的流动掩模，用于形成纳米线作为膜的纳米线喷涂技术 用于减少或消除纳米线中的电子的声子散射，并且描述了用于降低纳米线中的表面水平的技术。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2015046600A

公开(公告)日：2015-03-12

申请号：JP2014184819

申请日：2014-09-11

Applicant: ナノシス・インク. ,  Nanosys Inc

Inventor： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC: H01L29/06 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/322 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/737 ,  H01L29/786 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872 ,  H01L31/0352 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

Abstract: 【課題】複数の半導体デバイスを有する電子的な基板を得るための方法および装置を提供する。【解決手段】ナノワイヤ薄膜を、基板上に形成する。ナノワイヤ薄膜は、動作電流レベルを達成するのに十分なナノワイヤの密度を有するように形成する。複数の半導体領域を、ナノワイヤ薄膜に画定する。コンタクトを、半導体デバイス領域において形成し、それによって、電気的な接続を複数の半導体デバイスに提供する。【選択図】図3

Abstract translation: 要解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和设备。解决方案：在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。

公开(公告)号：AU2003282548A8

公开(公告)日：2004-05-04

申请号：AU2003282548

申请日：2003-10-09

Applicant: NANOSYS INC

Inventor： BOCK LARRY ,  OWICKI JOHN C ,  CHOW CALVIN ,  NIU CHUMMING ,  PONTIS GEORGE ,  DANIELS R HUGH ,  SAHI VIJENDRA ,  EMPEDOCLES STEPHEN

IPC: C12Q1/68 ,  G01N27/414 ,  G01N33/543 ,  C12Q1/00 ,  H01J1/02 ,  C25D11/04 ,  G01N33/53 ,  H01L29/06

Abstract: Methods of detecting a component of interest, a change in charge, a pH, a cellular response using nanosensors are provided. Nanosensors, including nanowires and nanowire arrays comprising functionalized and/or non-functionalized nanowires are provided. Nanosensors are used for detection in cellular fragmentation, multiple concentration analysis, glucose detection, and intracellular analysis.

公开(公告)号：AU2003260527A1

公开(公告)日：2003-10-20

申请号：AU2003260527

申请日：2003-04-01

Applicant: NANOSYS INC

Inventor： DUAN XIANGFENG ,  DANIELS HUGH ,  NIU CHUNMING ,  SAHI VIJENDRA ,  HAMILTON JIM ,  ROMANO LINDA T

IPC: B81C99/00 ,  C23F1/00 ,  H01L51/30 ,  H01L51/40

Abstract: Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.

公开(公告)号：CA2572798A1

公开(公告)日：2006-07-27

申请号：CA2572798

申请日：2005-04-29

Applicant: NANOSYS INC

Inventor： HAMILTON JAMES M ,  PONTIS GEORGE ,  HEALD DAVID L ,  SCHER ERIK C ,  SAHI VIJENDRA ,  PAN YAOLING ,  EMPEDOCLES STEPHEN A ,  STUMBO DAVID P ,  DUBROW ROBERT S ,  DUAN XIANGFENG ,  WHITEFORD JEFFERY A ,  ROMANO LINDA T ,  CHEN JIAN ,  NIU CHUNMING ,  LEMMI FRANCESCO ,  GOLDMAN JAY L

IPC: H01L21/20

公开(公告)号：AU2004236260A1

公开(公告)日：2004-11-18

申请号：AU2004236260

申请日：2004-05-05

Applicant: NANOSYS INC

Inventor： HAMILTON JIM ,  MURPHY MATTHEW ,  ROMANO LINDA T ,  SCHER ERIK ,  DUBROW ROBERT ,  PARCE J WALLACE ,  GOLDMAN JAY ,  STUMBO DAVE ,  SAHI VIJENDRA ,  DANIELS HUGH ,  NIU CHUNMING ,  WHITEFORD JEFFERY A

IPC: B32B5/16 ,  C01B20060101 ,  C12N15/87 ,  D04H3/00 ,  D04H5/00 ,  D04H13/00 ,  H01J49/04

公开(公告)号：CA2562148A1

公开(公告)日：2006-06-29

申请号：CA2562148

申请日：2005-04-22

Applicant: NANOSYS INC

Inventor： DUAN XIANGFENG ,  SAHI VIJENDRA ,  GOLDMAN JAY ,  NIU CHUNMING

IPC: H01L21/322 ,  C01B31/02

Abstract: The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a buffer layer is placed on a nanowire growth substrate and catalytic nanoparticles are added to form a catalytic-coated nanowire growth substrate. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed. In a further aspec t of the invention, in an embodiment a nanowire growth system using a foil roller to manufacture nanowires is provided.

公开(公告)号：AU2005319707A1

公开(公告)日：2006-06-29

申请号：AU2005319707

申请日：2005-04-22

Applicant: NANOSYS INC

Inventor： SAHI VIJENDRA ,  GOLDMAN JAY ,  DUAN XIANGFENG ,  NIU CHUNMING

IPC: H01L21/322 ,  C01B31/02

Abstract: The present invention is directed to compositions of matter, systems, and methods to manufacture nanowires. In an embodiment, a method to produce a catalytic-coated nanowire growth substrate for nanowire growth is disclosed which comprises: (a) depositing a buffer layer on a substrate; (b) treating the buffer layer with boiled water or steam to enhance interactions between the buffer layer and catalyst particles; and (c) depositing catalytic particles on a surface of the buffer layer. Methods to develop and use this catalytic-coated nanowire growth substrate are disclosed.

公开(公告)号：CA2522872A1

公开(公告)日：2004-11-18

申请号：CA2522872

申请日：2004-05-05

Applicant: NANOSYS INC

Inventor： SAHI VIJENDRA ,  DUBROW ROBERT ,  GOLDMAN JAY ,  ROMANO LINDA T ,  NIU CHUNMING ,  DANIELS HUGH ,  PARCE J WALLACE ,  WHITEFORD JEFFERY A ,  MURPHY MATTHEW ,  SCHER ERIK ,  STUMBO DAVE ,  HAMILTON JIM

IPC: B32B5/16 ,  C01B20060101 ,  C12N15/87 ,  D04H3/00 ,  D04H5/00 ,  D04H13/00 ,  H01J49/04

Abstract: The invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.

公开(公告)号：AU2003283973A1

公开(公告)日：2004-04-23

申请号：AU2003283973

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L ,  DUAN XIANGFENG ,  NIU CHUNMING

IPC: C01B31/02 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

Abstract: A method and apparatus for an electronic substrate (1920) having a plurality of semiconductor devices is described. A thin film of nanowires (1910) is formed on a substrate. The thin film of nanowires (1910) is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions is defined in the thin film of nanowires. Contacts (1902) are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.