公开(公告)号：JP2011101047A

公开(公告)日：2011-05-19

申请号：JP2011015801

申请日：2011-01-27

Applicant: Nanosys Inc ,  ナノシス・インコーポレイテッドNanosys, Inc.

Inventor： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC: H01L29/06 ,  B82B1/00 ,  C01B31/02 ,  H01L21/00 ,  H01L21/331 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/737 ,  H01L29/786 ,  H01L29/861 ,  H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  H01L35/34 ,  H01L41/18 ,  H01L41/193 ,  H01L41/22 ,  H01L41/24 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for obtaining an electronic substrate including a plurality of semiconductor devices. SOLUTION: A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed in the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-type doping nanowires and n-type doping nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for arranging nanowires on substrates, nanowire spraying techniques for forming nanowires as a film, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface levels in nanowires are described. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和装置。 解决方案：在衬底上形成纳米线的薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p型掺杂纳米线和n型掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上排列纳米线的流动掩模，用于形成纳米线作为膜的纳米线喷涂技术 用于减少或消除纳米线中的电子的声子散射，并且描述了用于降低纳米线中的表面水平的技术。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2015046600A

公开(公告)日：2015-03-12

申请号：JP2014184819

申请日：2014-09-11

Applicant: ナノシス・インク. ,  Nanosys Inc

Inventor： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC: H01L29/06 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/322 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/737 ,  H01L29/786 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872 ,  H01L31/0352 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

Abstract: 【課題】複数の半導体デバイスを有する電子的な基板を得るための方法および装置を提供する。【解決手段】ナノワイヤ薄膜を、基板上に形成する。ナノワイヤ薄膜は、動作電流レベルを達成するのに十分なナノワイヤの密度を有するように形成する。複数の半導体領域を、ナノワイヤ薄膜に画定する。コンタクトを、半導体デバイス領域において形成し、それによって、電気的な接続を複数の半導体デバイスに提供する。【選択図】図3

Abstract translation: 要解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和设备。解决方案：在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。

公开(公告)号：CA2580342A1

公开(公告)日：2006-10-19

申请号：CA2580342

申请日：2005-08-16

Applicant: NANOSYS INC

Inventor： LEON FRANCISCO ,  PARCE WALLACE J ,  EMPEDOCLES STEVEN A ,  STUMBO DAVID

IPC: H05B37/00

Abstract: Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).

公开(公告)号：AU2004276234A1

公开(公告)日：2005-04-07

申请号：AU2004276234

申请日：2004-09-15

Applicant: NANOSYS INC

Inventor： DUBROW ROBERT ,  ROMANO LINDA T ,  STUMBO DAVID

IPC: C30B7/00 ,  B82B20060101 ,  C30B21/02 ,  C30B28/06 ,  H01L21/20 ,  H01L21/36

Abstract: Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

公开(公告)号：AU2003283973A1

公开(公告)日：2004-04-23

申请号：AU2003283973

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L ,  DUAN XIANGFENG ,  NIU CHUNMING

IPC: C01B31/02 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

Abstract: A method and apparatus for an electronic substrate (1920) having a plurality of semiconductor devices is described. A thin film of nanowires (1910) is formed on a substrate. The thin film of nanowires (1910) is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions is defined in the thin film of nanowires. Contacts (1902) are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：CA2499944A1

公开(公告)日：2004-04-15

申请号：CA2499944

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： EMPEDOCLES STEPHEN ,  STUMBO DAVID

IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/1362 ,  G09G3/20 ,  H01L21/77 ,  H01L27/28 ,  H01L27/32 ,  H01L29/06 ,  H01L51/00 ,  H01L51/05 ,  H01L23/52 ,  G09F9/33 ,  G09F9/35

Abstract: The present invention is directed to a display using nanowire transistors. I n particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowir e row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirro r displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.

公开(公告)号：CA2538262A1

公开(公告)日：2005-04-07

申请号：CA2538262

申请日：2004-09-15

Applicant: NANOSYS INC

Inventor： DUBROW ROBERT ,  ROMANO LINDA T ,  STUMBO DAVID

IPC: B82B3/00 ,  B82B20060101 ,  B82B1/00 ,  C30B7/00 ,  C30B21/02 ,  C30B28/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

Abstract: Methods and systems for depositing nanornaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanornaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during t he transfer process.

公开(公告)号：CA2532991A1

公开(公告)日：2005-02-24

申请号：CA2532991

申请日：2004-08-04

Applicant: NANOSYS INC

Inventor： PAN YAOLING ,  PARCE J WALLACE ,  BURETEA MIHAI ,  CHOW CALVIN ,  NIU CHUNMING ,  CHEN JIAN ,  ROMANO LINDA T ,  STUMBO DAVID

IPC: H01L21/283 ,  D02G3/00 ,  H01L21/336 ,  H01L21/44 ,  H01L29/06 ,  H01L29/12 ,  H01L29/423 ,  H01L29/786 ,  H01L33/06 ,  H01L33/24 ,  H01L51/00 ,  H01L51/05

Abstract: The present invention relates to a system and process for producing a nanowi re- material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally compris es separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite lay er emitting light at a different wavelength.

公开(公告)号：CA2499965A1

公开(公告)日：2004-04-15

申请号：CA2499965

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： CHEN JIAN ,  GOLDMAN JAY L ,  NIU CHUNMING ,  PARCE J WALLACE ,  BOCK LAWRENCE ,  DUAN XIANGFENG ,  SAHI VIJENDRA ,  EMPEDOCLES STEPHEN ,  STUMBO DAVID ,  ROMANO LINDA T

IPC: C01B31/02 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

Abstract: A method and apparatus for an electronic substrate (1920) having a plurality of semiconductor devices is described. A thin film of nanowires (1910) is formed on a substrate. The thin film of nanowires (1910) is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions is defined in the thin film of nanowires. Contacts (1902) are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films includi ng p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, technique s for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：AU2003222134A1

公开(公告)日：2003-10-20

申请号：AU2003222134

申请日：2003-04-01

Applicant: NANOSYS INC

Inventor： CHOW CALVIN ,  DUAN XIANFENG ,  NIU CHUNGMING ,  PONTIS GEORGE ,  SAHI VIJENDRA ,  ROMANO LINDA T ,  STUMBO DAVID ,  EMPEDOCLES STEPHEN ,  BOCK LARRY

IPC: B81C99/00 ,  C23F1/00 ,  H01L51/30 ,  H01L51/40

Abstract: Nanostructure manufacturing methods and methods for assembling nanostructures into functional elements such as junctions, arrays and devices are provided. Systems for practicing the methods are also provided.