公开(公告)号：JP2011101047A

公开(公告)日：2011-05-19

申请号：JP2011015801

申请日：2011-01-27

Applicant: Nanosys Inc ,  ナノシス・インコーポレイテッドNanosys, Inc.

Inventor： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC: H01L29/06 ,  B82B1/00 ,  C01B31/02 ,  H01L21/00 ,  H01L21/331 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/737 ,  H01L29/786 ,  H01L29/861 ,  H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  H01L35/34 ,  H01L41/18 ,  H01L41/193 ,  H01L41/22 ,  H01L41/24 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for obtaining an electronic substrate including a plurality of semiconductor devices. SOLUTION: A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed in the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-type doping nanowires and n-type doping nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for arranging nanowires on substrates, nanowire spraying techniques for forming nanowires as a film, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface levels in nanowires are described. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和装置。 解决方案：在衬底上形成纳米线的薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p型掺杂纳米线和n型掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上排列纳米线的流动掩模，用于形成纳米线作为膜的纳米线喷涂技术 用于减少或消除纳米线中的电子的声子散射，并且描述了用于降低纳米线中的表面水平的技术。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2015046600A

公开(公告)日：2015-03-12

申请号：JP2014184819

申请日：2014-09-11

Applicant: ナノシス・インク. ,  Nanosys Inc

Inventor： DUAN XIANGFENG ,  NIU CHUNMING ,  EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L

IPC: H01L29/06 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/322 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/737 ,  H01L29/786 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872 ,  H01L31/0352 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y25/00 ,  H01F1/0072 ,  H01L27/1214 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L33/08 ,  H01L33/18 ,  H01L35/26 ,  H01L35/32 ,  H01L41/082 ,  H01L41/18 ,  H01L41/316 ,  H01L51/0012 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0508 ,  H01L51/0545 ,  H01L51/0595 ,  Y02E10/549

Abstract: 【課題】複数の半導体デバイスを有する電子的な基板を得るための方法および装置を提供する。【解決手段】ナノワイヤ薄膜を、基板上に形成する。ナノワイヤ薄膜は、動作電流レベルを達成するのに十分なナノワイヤの密度を有するように形成する。複数の半導体領域を、ナノワイヤ薄膜に画定する。コンタクトを、半導体デバイス領域において形成し、それによって、電気的な接続を複数の半導体デバイスに提供する。【選択図】図3

Abstract translation: 要解决的问题：提供一种用于获得包括多个半导体器件的电子衬底的方法和设备。解决方案：在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域中形成触点，从而提供与多个半导体器件的电连接。

公开(公告)号：AU2003282548A8

公开(公告)日：2004-05-04

申请号：AU2003282548

申请日：2003-10-09

Applicant: NANOSYS INC

Inventor： BOCK LARRY ,  OWICKI JOHN C ,  CHOW CALVIN ,  NIU CHUMMING ,  PONTIS GEORGE ,  DANIELS R HUGH ,  SAHI VIJENDRA ,  EMPEDOCLES STEPHEN

IPC: C12Q1/68 ,  G01N27/414 ,  G01N33/543 ,  C12Q1/00 ,  H01J1/02 ,  C25D11/04 ,  G01N33/53 ,  H01L29/06

Abstract: Methods of detecting a component of interest, a change in charge, a pH, a cellular response using nanosensors are provided. Nanosensors, including nanowires and nanowire arrays comprising functionalized and/or non-functionalized nanowires are provided. Nanosensors are used for detection in cellular fragmentation, multiple concentration analysis, glucose detection, and intracellular analysis.

公开(公告)号：AU2003279708A1

公开(公告)日：2004-03-29

申请号：AU2003279708

申请日：2003-09-04

Applicant: NANOSYS INC

Inventor： CHOW CALVIN ,  EMPEDOCLES STEPHEN ,  MEISEL ANDREAS ,  PARCE WALLACE J ,  SCHER ERIK ,  BURETEA MIHAI A

IPC: B82B1/00 ,  H01L20060101 ,  H01L31/00 ,  H01L31/0256 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/0384 ,  H01L51/00 ,  H01L51/42

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

公开(公告)号：CA2499950A1

公开(公告)日：2004-04-15

申请号：CA2499950

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： NIU CHUNMING ,  STUMBO DAVID P ,  DUAN XIANFENG ,  EMPEDOCLES STEPHEN

IPC: C01B31/02 ,  G01V15/00 ,  G06K19/077 ,  H01L20060101 ,  H01L21/00 ,  H01L21/04 ,  H01L21/335 ,  H01L27/20 ,  H01L29/06 ,  H01L31/0352 ,  H01L51/00 ,  H01Q3/36 ,  H03H11/20 ,  H04R3/00

Abstract: Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making th e macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide securit y monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described .

公开(公告)号：AU2003279708A8

公开(公告)日：2004-03-29

申请号：AU2003279708

申请日：2003-09-04

Applicant: NANOSYS INC

Inventor： CHOW CALVIN ,  MEISEL ANDREAS ,  BURETEA MIHAI A ,  EMPEDOCLES STEPHEN ,  PARCE WALLACE J ,  SCHER ERIK

IPC: B82B1/00 ,  H01L20060101 ,  H01L31/00 ,  H01L31/0256 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/0384 ,  H01L51/00 ,  H01L51/42 ,  H01L31/04

Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

公开(公告)号：AU2003283973A1

公开(公告)日：2004-04-23

申请号：AU2003283973

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： EMPEDOCLES STEPHEN ,  ROMANO LINDA T ,  CHEN JIAN ,  SAHI VIJENDRA ,  BOCK LAWRENCE ,  STUMBO DAVID ,  PARCE J WALLACE ,  GOLDMAN JAY L ,  DUAN XIANGFENG ,  NIU CHUNMING

IPC: C01B31/02 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

Abstract: A method and apparatus for an electronic substrate (1920) having a plurality of semiconductor devices is described. A thin film of nanowires (1910) is formed on a substrate. The thin film of nanowires (1910) is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions is defined in the thin film of nanowires. Contacts (1902) are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：CA2499944A1

公开(公告)日：2004-04-15

申请号：CA2499944

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： EMPEDOCLES STEPHEN ,  STUMBO DAVID

IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/1362 ,  G09G3/20 ,  H01L21/77 ,  H01L27/28 ,  H01L27/32 ,  H01L29/06 ,  H01L51/00 ,  H01L51/05 ,  H01L23/52 ,  G09F9/33 ,  G09F9/35

Abstract: The present invention is directed to a display using nanowire transistors. I n particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowir e row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirro r displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.

公开(公告)号：AU2003268487A1

公开(公告)日：2004-03-29

申请号：AU2003268487

申请日：2003-09-04

Applicant: NANOSYS INC

Inventor： BURETEA MIHAI ,  EMPEDOCLES STEPHEN ,  NIU CHUNMING ,  SCHER ERIK C

IPC: F24S23/00 ,  G02B1/04 ,  G02B5/10 ,  G02B6/122 ,  H01S3/063 ,  H01S5/10

Abstract: This invention provides composite materials comprising nanostructures (5,9) (e.g., nanowires, branched nanowires, nanotetrapods, nanocrystals, and nanoparticles). Methods and compositions for making such nanocomposites are also provided, as are articles (20-27, 30-40, 50-56) comprising such composites. Waveguides and light concentrators comprising nanostructures (not necessarily as part of a nanocomposite) are additional features of the invention.

公开(公告)号：CA2499965A1

公开(公告)日：2004-04-15

申请号：CA2499965

申请日：2003-09-30

Applicant: NANOSYS INC

Inventor： CHEN JIAN ,  GOLDMAN JAY L ,  NIU CHUNMING ,  PARCE J WALLACE ,  BOCK LAWRENCE ,  DUAN XIANGFENG ,  SAHI VIJENDRA ,  EMPEDOCLES STEPHEN ,  STUMBO DAVID ,  ROMANO LINDA T

IPC: C01B31/02 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/06 ,  H01L29/786 ,  H01L33/20 ,  H01L41/18 ,  H01L41/22 ,  H01L51/00 ,  H01L51/05 ,  H03H11/20

Abstract: A method and apparatus for an electronic substrate (1920) having a plurality of semiconductor devices is described. A thin film of nanowires (1910) is formed on a substrate. The thin film of nanowires (1910) is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions is defined in the thin film of nanowires. Contacts (1902) are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films includi ng p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, technique s for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.