公开(公告)号：EP2275384B1

公开(公告)日：2012-02-22

申请号：EP09165533.2

申请日：2009-07-15

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Ponomarev, Youri Victorovitch ,  Van Dal, Mark

IPC: B81C1/00 ,  G01P15/06

CPC classification number: H01L23/564 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00246 ,  B81C99/005 ,  B81C2201/013 ,  B81C2203/0136 ,  B81C2203/0714 ,  G01P15/06 ,  G01P15/0802 ,  G01P2015/0862 ,  G01P2015/0877 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers (12) separated by dielectric layers (14), said stack comprising a first conductive support structure (20) and a second conductive support structure (21) and a cavity (42) in which an inertial mass element (22) comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions (24), at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

公开(公告)号：EP2357468A1

公开(公告)日：2011-08-17

申请号：EP10151337.2

申请日：2010-01-21

Applicant: NXP B.V.

Inventor： Nackaerts, Axel ,  Merz, Matthias

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4148

Abstract: The present invention relates to a sensor comprising a substrate (10) carrying a field effect transistor (30) having a gate electrode (32), the sensor further comprising a measurement electrode (36) spatially separated from the gate electrode; and a reference electrode (40), said measurement electrode being in configurable conductive contact with said gate electrode, the sensor further comprising a charge storage element (60) comprising a first electrode connected to a node (38) between the measurement electrode and the gate electrode; and a second electrode configurably connected to a known potential source (80). The present invention further relates to a method of performing a measurement with such a sensor.

Abstract translation: 传感器技术领域本发明涉及一种包括承载具有栅极（32）的场效应晶体管（30）的基板（10）的传感器，该传感器还包括与栅电极空间分离的测量电极（36） 和参考电极（40），所述测量电极与所述栅极电极可配置地导电接触，所述传感器还包括电荷存储元件（60），所述电荷存储元件包括连接到所述测量电极和所述栅极之间的节点（38）的第一电极 电极; 以及可配置地连接到已知电位源（80）的第二电极。 本发明还涉及使用这种传感器执行测量的方法。

公开(公告)号：EP2336758A1

公开(公告)日：2011-06-22

申请号：EP09179409.9

申请日：2009-12-16

Applicant: NXP B.V.

Inventor： Humbert, Aurelie ,  Merz, Matthias ,  Ponomarev, Youri, Victorovitch ,  Daamen, Roel ,  Van Dal, Marcus,Johannes,Henricus

IPC: G01N27/22

CPC classification number: G01N27/223 ,  G01R27/2605

Abstract: A capacitive sensor for detecting the presence of a substance includes a plurality of upstanding conductive pillars arranged within a first layer of the sensor, a first electrode connected to a first group of the pillars, a second electrode connected to a second, different group of the pillars, and a dielectric material arranged adjacent the pillars, for altering the capacitance of the sensor in response to the presence of said substance.

Abstract translation: 用于检测物质存在的电容传感器包括布置在传感器的第一层内的多个直立的导电柱，连接到第一组柱的第一电极，连接到第二组不同组的第二电极 支柱和邻近柱子布置的介电材料，用于响应于所述物质的存在而改变传感器的电容。

公开(公告)号：EP2336756A1

公开(公告)日：2011-06-22

申请号：EP09179322.4

申请日：2009-12-15

Applicant: NXP B.V.

Inventor： Humbert, Aurelie ,  Merz, Matthias ,  Daamen, Roel ,  Ponomarev, Youri Victorovitch

IPC: G01N27/04

CPC classification number: G01N27/041 ,  G01N27/048

Abstract: Disclosed is a liquid immersion sensor comprising a substrate (10) carrying a conductive sensing element (20) and a corrosive agent (30) for corroding the conductive sensing element, said corrosive agent being immobilized in the vicinity of the conductive sensing element and being soluble in said liquid.

Abstract translation: 公开了一种液浸传感器，其包括承载导电感测元件（20）的基底（10）和用于腐蚀导电感测元件的腐蚀剂（30），所述腐蚀剂固定在导电感测元件附近并且是可溶的 在所述液体中。

公开(公告)号：EP2677306B1

公开(公告)日：2017-11-29

申请号：EP12172620.2

申请日：2012-06-19

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Juffermans, Casper ,  Nackaerts, Axel

IPC: G01N27/414 ,  H01L29/66

CPC classification number: H01L29/66 ,  G01N27/4145 ,  G01N27/4148 ,  H01L29/66007

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a metallization stack (30) over said substrate for providing interconnections to at least some of said circuit elements, the metallization stack comprising a plurality of patterned metal layers (31) spatially separated from each other by respective electrically insulating layers (32), at least some of said electrically insulating layers comprising conductive portions (33) that electrically interconnect portions of adjacent metal layers, wherein at least one of the patterned metallization layers comprises a plurality of ion-sensitive electrodes (34), each ion-sensitive electrode being electrically connected to at least one of said circuit elements, a plurality of sample volumes (50) extending into said metallization stack, each sample volume terminating at one of said ion-sensitive electrodes; and an ion-sensitive layer lining at least the ion-sensitive electrodes in said sample volumes. A method of manufacturing such an IC is also disclosed.

公开(公告)号：EP2677307B1

公开(公告)日：2016-05-11

申请号：EP12172984.2

申请日：2012-06-21

Applicant: NXP B.V.

Inventor： Merz, Matthias

IPC: G01N27/414 ,  C12Q1/68

CPC classification number: G01N27/26 ,  B01L3/5085 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0893 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/82

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a plurality of sensing electrodes (34) over said substrate, each sensing electrode being electrically connected to at least one of said circuit elements; and a plurality of wells (50) for receiving a sample, each sensing electrode defining the bottom of one of said wells, wherein each sensing electrode comprises at least one portion (34') extending upwardly into said well. A method of manufacturing such an IC is also disclosed.

公开(公告)号：EP2287597B1

公开(公告)日：2014-07-30

申请号：EP09252002.2

申请日：2009-08-17

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Ponomarev, Youri Victorovitch

IPC: G01N27/333 ,  G01N27/414

CPC classification number: G01N27/4167 ,  G01N27/333 ,  G01N27/414 ,  Y10T29/4913

公开(公告)号：EP2743677A1

公开(公告)日：2014-06-18

申请号：EP12197184.0

申请日：2012-12-14

Applicant: NXP B.V.

Inventor： Soccol, Dimitri ,  Merz, Matthias

IPC: G01N21/35 ,  G01N33/00 ,  B01J20/22

CPC classification number: B01J20/226 ,  B01J20/261 ,  B01J20/262 ,  B01J20/28004 ,  B01J20/28011 ,  B01J20/28026 ,  G01N21/3504 ,  G01N33/004 ,  Y02A50/243

Abstract: An infrared CO x sensor (10) is disclosed comprising an infrared source (14), an infrared detector (16) and an optical path between the infrared source and the infrared detector exposed to the environment of said sensor, wherein the optical path comprises a CO x -binding medium (20, 20'), said medium being substantially transparent to infrared radiation having a wave number in the range of 2,000-2,500 cm -1 .

Abstract translation: 公开了一种红外CO x传感器（10），其包括红外源（14），红外检测器（16）和暴露于所述传感器的环境的红外源和红外检测器之间的光路，其中光路包括 CO x-结合介质（20,20'），所述介质对于波数在2,000-2,500cm -1范围内的红外辐射基本上是透明的。

公开(公告)号：EP2554981B1

公开(公告)日：2014-03-19

申请号：EP11191420.6

申请日：2011-11-30

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Humbert, Aurelie ,  Daamen, Roel ,  Tio Castro, David

IPC: G01N27/12 ,  G01N33/00 ,  G01N27/18

CPC classification number: G01N27/128 ,  G01N25/18 ,  G01N27/121 ,  G01N27/125 ,  G01N27/22 ,  G01N33/004 ,  G01N33/18 ,  G01N33/1826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/1461 ,  H01L2924/00

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying a plurality of circuit elements; a metallization stack (12,14,16) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion (20) and a second metal portion (21); a passivation stack (24,26,28) covering the metallization stack; a gas sensor including a sensing material portion (32,74) on the passivation stack; a first conductive portion (38) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion (40) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed. The gas sensor measures the gas concentration either by measuring the resistivity of the sensing material as the test gas is absorbed in the sensing material or by measuring the temperature change of the sensing material due to changes of thermal conductivity of the test gas.

公开(公告)号：EP2677307A1

公开(公告)日：2013-12-25

申请号：EP12172984.2

申请日：2012-06-21

Applicant: NXP B.V.

Inventor： Merz, Matthias

IPC: G01N27/414 ,  C12Q1/68

CPC classification number: G01N27/26 ,  B01L3/5085 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0893 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/82

Abstract: Disclosed is an integrated circuit comprising a substrate (10) carrying plurality of circuit elements (20); a plurality of sensing electrodes (34) over said substrate, each sensing electrode being electrically connected to at least one of said circuit elements; and a plurality of wells (50) for receiving a sample, each sensing electrode defining the bottom of one of said wells, wherein each sensing electrode comprises at least one portion (34') extending upwardly into said well. A method of manufacturing such an IC is also disclosed.

Abstract translation: 公开了一种集成电路，其包括承载多个电路元件（20）的基板（10）。 多个感测电极（34），每个感测电极电连接到所述电路元件中的至少一个; 以及用于接收样品的多个孔（50），每个感测电极限定所述井之一的底部，其中每个感测电极包括向上延伸到所述井中的至少一个部分（34'）。 还公开了制造这种IC的方法。