MULTI-STATE INTERFEROMETRIC MODULATOR WITH LARGE STABLE RANGE OF MOTION
    21.
    发明申请
    MULTI-STATE INTERFEROMETRIC MODULATOR WITH LARGE STABLE RANGE OF MOTION 审中-公开
    具有大稳定运动范围的多状态干涉式调制器

    公开(公告)号:WO2015108649A1

    公开(公告)日:2015-07-23

    申请号:PCT/US2014/070630

    申请日:2014-12-16

    Abstract: This disclosure provides systems, methods and apparatus relating to electromechanical display devices. In one aspect, a multi-stage interferometric modulator (IMOD) can include a movable reflector that can be moved to different positions to produce different reflected colors. The IMOD can include deformable elements that are coupled to a back side of the movable reflector and provide support to the movable reflector. The deformable elements can provide a restoring force that biases the movable reflector to a resting position. The IMOD can include one or more restoring force modifiers that are configured to increase the restoring force when engaged. The restoring force modifiers can be between the movable reflector and the deformable elements such that the deformable elements contact the restoring force modifiers when the movable reflector is displaced to a contacting position.

    Abstract translation: 本公开提供了与机电显示装置有关的系统,方法和装置。 一方面,多级干涉式调制器(IMOD)可以包括可移动的反射器,其可移动到不同的位置以产生不同的反射颜色。 IMOD可以包括耦合到可移动反射器的后侧的可变形元件并且为可移动反射器提供支撑。 可变形元件可以提供将可移动反射器偏置到静止位置的恢复力。 IMOD可以包括一个或多个恢复力修改器,其被配置为当接合时增加恢复力。 恢复力修改器可以在可移动反射器和可变形元件之间,使得当可移动反射器移位到接触位置时,可变形元件接触恢复力修改器。

    ADJUSTABLE COIL FOR INDUCTIVELY COUPLED PLASMA
    22.
    发明申请
    ADJUSTABLE COIL FOR INDUCTIVELY COUPLED PLASMA 审中-公开
    用于感应耦合等离子的可调节线圈

    公开(公告)号:WO2014099398A1

    公开(公告)日:2014-06-26

    申请号:PCT/US2013/073368

    申请日:2013-12-05

    Inventor: SASAGAWA, Teruo

    CPC classification number: C23C16/505 B44C1/227 H01J37/321 H01J37/3211

    Abstract: Systems, methods and apparatus for fabricating devices use an inductively-coupled plasma. An inductively coupled plasma system includes a reaction chamber including a reaction space and a coil chamber. The system includes a workpiece support within the reaction space. The system includes a first inductive coil section and a second inductive coil section, the first and second inductive coil sections being independently movable. At least one power source is coupled to the first and second inductive coil sections. The first and second inductive coil sections and the at least one power source are configured to induce an inductively coupled plasma (ICP) in the reaction space. An adjustment mechanism is configured to move the first inductive coil section relative to the second inductive coil section.

    Abstract translation: 用于制造器件的系统,方法和装置使用电感耦合等离子体。 电感耦合等离子体系统包括反应室,其包括反应空间和线圈室。 该系统在反应空间内包括工件支撑。 该系统包括第一感应线圈部分和第二感应线圈部分,第一和第二感应线圈段可独立移动。 至少一个电源耦合到第一和第二感应线圈段。 第一和第二感应线圈部分和至少一个电源被配置为在反应空间中感应电感耦合等离子体(ICP)。 调整机构配置成相对于第二感应线圈段移动第一感应线圈段。

    PATTERNING OF ANTISTICTION FILMS FOR ELECTROMECHANICAL SYSTEMS DEVICES
    23.
    发明申请
    PATTERNING OF ANTISTICTION FILMS FOR ELECTROMECHANICAL SYSTEMS DEVICES 审中-公开
    电气系统设备防伪膜的图案

    公开(公告)号:WO2013070583A1

    公开(公告)日:2013-05-16

    申请号:PCT/US2012/063678

    申请日:2012-11-06

    Inventor: SASAGAWA, Teruo

    Abstract: A laser absorption layer (91) is first selectively formed in a seal pattern region surrounding an array of electromechanical systems elements (90), followed by depositing an antistiction layer (93) as a blanket layer over the substrate and the laser absorption layer. The antistiction layer is then selectively removed from the seal pattern using a laser. An epoxy sealing material (100) is provided in the seal pattern where the antistiction layer was removed and a backplate (101) is sealed to the substrate using epoxy.

    Abstract translation: 激光吸收层(91)首先选择性地形成在围绕机电系统元件(90)的阵列的密封图案区域中,随后在衬底和激光吸收层上沉积作为覆盖层的抗静电层(93)。 然后使用激光从密封图案中选择性地去除抗静电层。 在密封图案中设置环氧密封材料(100),其中除去抗静电层,并且使用环氧树脂将背板(101)密封到基底上。

    PLANARIZED SPACER FOR COVER PLATE OVER ELECTROMECHANICAL SYSTEMS DEVICE ARRAY
    24.
    发明申请
    PLANARIZED SPACER FOR COVER PLATE OVER ELECTROMECHANICAL SYSTEMS DEVICE ARRAY 审中-公开
    用于机电系统设备阵列的覆盖板的平面间隔

    公开(公告)号:WO2012177488A2

    公开(公告)日:2012-12-27

    申请号:PCT/US2012/042495

    申请日:2012-06-14

    Inventor: SASAGAWA, Teruo

    CPC classification number: B81B7/0058 B81C2203/0109 B81C2203/0118

    Abstract: This disclosure provides systems, methods and apparatus for a MEMS device. In one aspect, an electromechanical systems apparatus includes a substrate, a stationary electrode positioned over the substrate, a movable electrode spaced from the stationary electrode by a gap, and at least one support structure extending above the movable electrode. The support structure includes an inorganic dielectric layer and a polymer layer.

    Abstract translation: 本公开提供了用于MEMS器件的系统,方法和装置。 一方面,机电系统装置包括基板,位于基板上方的固定电极,通过间隙与固定电极隔开的可动电极以及在可动电极上方延伸的至少一个支撑结构。 支撑结构包括无机介电层和聚合物层。

    MECHANICAL LAYER AND METHODS OF SHAPING THE SAME
    26.
    发明公开
    MECHANICAL LAYER AND METHODS OF SHAPING THE SAME 审中-公开
    机械层和形成方法

    公开(公告)号:EP2550232A2

    公开(公告)日:2013-01-30

    申请号:EP11714150.7

    申请日:2011-03-15

    Abstract: Mechanical layers and methods of shaping mechanical layers are disclosed. In one embodiment, a method includes depositing a support layer (85), a sacrificial layer (84) and a mechanical layer (34) over a substrate (20), and forming a support post (60) from the support layer. A kink (90) is formed adjacent to the support post in the mechanical layer. The kink comprises a rising edge (91) and a falling edge (92), and the kink is configured to control the shaping and curvature of the mechanical layer upon removal of the sacrificial layer.

    MICROELECTROMECHANICAL DEVICE AND METHOD UTILIZING A POROUS SURFACE
    27.
    发明公开
    MICROELECTROMECHANICAL DEVICE AND METHOD UTILIZING A POROUS SURFACE 审中-公开
    微机电装置和一种使用多孔表面

    公开(公告)号:EP1979267A2

    公开(公告)日:2008-10-15

    申请号:EP07775496.8

    申请日:2007-04-12

    CPC classification number: B81B3/001 B81B2201/047 B81C2201/0115 G02B26/001

    Abstract: A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator 80 that includes a transparent electrode 81 having a first surface 81a; and a movable reflective electrode 82 with a second surface 82a facing the first surface 81a. The movable reflective electrode 82 is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer 83 which has a porous surface 83a. The porous surface 83a, in the actuated position, decreases contact area between the electrodes 81 and 82, thus reducing stiction.

    PROCESSING FOR ELECTROMECHANICAL SYSTEMS AND EQUIPMENT FOR SAME
    30.
    发明申请
    PROCESSING FOR ELECTROMECHANICAL SYSTEMS AND EQUIPMENT FOR SAME 审中-公开
    机电系统及其设备的处理

    公开(公告)号:WO2013078141A1

    公开(公告)日:2013-05-30

    申请号:PCT/US2012/065904

    申请日:2012-11-19

    CPC classification number: H01L21/67207 H01L21/67069

    Abstract: This disclosure provides systems, methods and apparatus for processing multiple substrates in a batch cluster tool. A batch cluster tool can include a transfer chamber, an etch process chamber, and one or both of an ALD process chamber and an SAM process chamber. Each of the batch process chambers can be a common chamber where the substrates are open to one another, or can include multiple process subchambers that are isolated from one another in operation. Multiple substrates are transferred into an etch chamber. The substrates are exposed to a vapor phase etchant. The substrates can then be transferred to an atomic layer deposition (ALD) chamber and exposed to vapor phase reactants to form a thin film. The substrates can be transferred either from the etch process chamber or the ALD chamber to a third chamber and exposed to vapor phase reactants to form a self-assembled monolayer (SAM).

    Abstract translation: 本公开提供了用于在批量集群工具中处理多个衬底的系统,方法和装置。 批量集群工具可以包括传送室,蚀刻处理室以及ALD处理室和SAM处理室中的一个或两个。 每个批处理室可以是公共室,其中基板彼此敞开,或者可以包括在操作中彼此隔离的多个处理子室。 将多个基板转移到蚀刻室中。 将基板暴露于气相蚀刻剂。 然后将衬底转移到原子层沉积(ALD)室并暴露于气相反应物以形成薄膜。 衬底可以从蚀刻处理室或ALD室转移到第三室,并暴露于气相反应物以形成自组装单层(SAM)。

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